Non Magnetic SMQ HIPAX
PIN Diode
V 1.00
MA4P7464F-1072T
Features
Non-Magnetic Package Suitable for MRI Applications
Rectangular MELF SMQ Ceramic Package
Hermetically Sealed
Lower Rs for Lower Series Loss
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Longer
τ
L
for Lower Intermodulation Distortion
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Lower Cj for Higher Series Isolation
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Higher Average Incident Power Handling Capability
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Description
The MA4P7464F-1072T is a surface mountable PIN diode
in a Non-Magnetic ( patent pending ) Metal Electrode
Leadless Faced (MELF) package. The device incorporates
M/A-COM’s proven HIPAX technology to produce a low
inductance ceramic package with no ribbons or whisker
wires. The package utilizes M/A-COM’s new non-
magnetic plating process to provide an extremely low
permeability, hermetically sealed package. Incorporated in
the package is a passivated PIN diode that is full face
bonded on both the cathode and anode of the chip to
maximize surface area for lower electrical and thermal
resistance. The MA4P7464F-1072T has been
comprehensively characterized both electrically and
mechanically to ensure repeatable and predictable
performance.
Designed for Automated Assembly
These SMQ PIN diodes are designed for high volume tape
and reel assembly. The rectangular package design provides
for highly efficient automatic pick and place assembly
techniques. The parallel flat surfaces are suitable for key
jaw or vacuum pickup techniques. All solder able surfaces
are tin plated and compatible with reflow and vapor phase
soldering methods.
Enviornmental Capability
HIPAX devices are applicable for use in industrial and
military applications and can be screened to meet the
environmental requirements of MIL-STD-750, MIL-STD-202 as
well as other military standards. The table below lists some
of the MIL-STD 750 tests the device is designed to meet.
Applications
The diodes are well suited for use in low loss, low
distortion, and high power switching circuits applicable for
high magnetic field environments from HF through UHF
frequencies. The lower thermal resistance of this device
provides excellent higher average performance at RF power
incident levels up to 100 watts CW. This device is designed
to meet the most rigorous electrical and mechanical
requirements of MRI testing environments.
MIL-STD-750
Test
High Temperature Storage
Temperature Shock
HTRB
Moisture Resistance
Gross Leak
Vibration Fatigue
Solderability
1031
1051
1038
1021
1071 Cond. E
2046
2026
Method
Description
+150 °C, 340 Hours
-65 °C to +125 °C, 20 Cycles
80% of rated V
B
, +150 °C, for 96 Hours
No Initial Conditioning, 85 % RH, +85° C
Dye Penetrant Visual
20,000 G’s, 60 Hz, x, y, z axis
Test Temperature = +245 °C
Non Magnetic SMQ HIPAX PIN Diode
Electrical Specifications @ +25 °C
Parameter
Forward Voltage (Maximum)
Voltage Rating (Minimum)
Total Capacitance (Maximum)
Series Resistance (Maximum)
Parallel Resistance (Minimum)
Carrier Lifetime (Nominal)
I-Region Length (Nominal)
C.W. Thermal Resistance
(Maximum)
Power Dissipation in Free Air
(Maximum)
Power Dissipation with Diode
Case at Tambient (Maximum)
Symbol
V
F
V
R
C
T
R
S
R
P
Condition
I
F
= +100 mA
Ir = -10 uA
-100 V @ 100 MHz
+100 mA @ 100 MHz
-10 V @ 100 MHz
+6 mA / -10 mA @
(50% - 90% Voltage)
-
I
H
= 1A, I
L
= 10 mA,
T = 1 mS
I
F
= +100 mA
I
F
= +100 mA
MA4P7464F-1072T
V 1.00
Unit Value
1.0 V
DC
l – 400 l V
DC
0.8 pF
0.6 Ohms
75 K
Ω
4.5
us
100
µm
20 °C/W
2.5 W
7.5 W
τ
L
µm
θ
W
P
D
Absolute Maximum Ratings
1
@ 25°C
Parameter
Operating Temperature
Storage Temperature
Diode Junction Temperature
Diode Mounting Temperature
RF C.W. Incident Power
Forward D.C. Current
Reverse Voltage @ -10 uA
Absolute Maximum
-65 °C to +125 °C
-65 °C to +150 °C
+175 °C Continuous
+235 °C for 10 seconds
+ 50 dBm C.W.
+ 150 mA
l – 600 V l
1. Exceeding these limits may cause permanent damage.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
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North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Non Magnetic SMQ HIPAX PIN Diode
Typical Electrical Performance
MA4P7464F-1072T Rs vs I
1000
MA4P7464F-1072T
V 1.00
100 MHz
Rs_100 MHz
Rs_1000 MHz
100
Rs (Ohms)
1000 MHz
10
1
0.1
0.01
0.10
1.00
I ( mA )
10.00
100.00
MA4P7464F-1072T Rp vs Voltage
1.00E+06
Rp_1500 MHz
1.00E+05
Rp (Ohms)
1.00E+04
1.00E+03
1.00
10.00
Voltage ( V )
100.00
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n
n
n
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Non Magnetic SMQ HIPAX PIN Diode
Typical Electrical Performance
MA4P7464F-1072T Ct vs Voltage
10
MA4P7464F-1072T
V 1.00
Ct_100 MHz
Ct_1500 MHz
Ct (pF)
1500 MHz
1
100 MHz
0.1
1.00
10.00
Voltage ( V )
100.00
MA4P7464F-1072T Ls vs Frequency
1
Ls_50 mA
Ls (nH)
0.1
100.0
1000.0
F ( MHz )
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n
n
n
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
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