TN2425
Low Threshold N-Channel Enhancement-Mode
Vertical DMOS FET
Features
►
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Low threshold
High input impedance
Low input capacitance
Fast switching speeds
Low ON-resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-Channel devices
General Description
The Supertex TN2425 is a low threshold enhancement-
mode (normally-off) transistor that utilizes a vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors,
and the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
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Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Medical ultrasound pulsers
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Device
TN2425
Package Options
TO-243AA (SOT-89)
TN2425N8
TN2425N8-G
BV
DSS
/BV
DGS
250V
R
DS(ON)
(max)
I
D(ON)
(min)
Product marking for TO-243AA:
TN4C
where
= 2-week alpha date code
3.5Ω
1.5A
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Parameter
Drain to source voltage
Drain to gate voltage
Gate to source voltage
Operating and storage temperature
Soldering temperature
1
Value
BV
DSS
BV
DGS
±20V
-55°C to +150°C
+300°C
Pin Configuration
D
TN2425
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Note 1.
Distance of 1.6mm from case for 10 seconds.
G
D
(Top View)
S
TO-243AA (SOT-89)
TN2425
Electrical Characteristics
(T =25°C unless otherwise specified)
A
Symbol
Parameter
Min
Typ
Max
Units
Conditions
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
I
DSS
Drain-to-source breakdown voltage
Gate threshold voltage
V
GS(th)
change with temperature
Gate body leakage current
Zero gate voltage drain current
250
0.8
-
-
-
-
0.8
1.5
-
-
-
-
500
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
105
25
7
5
10
25
5
-
300
-
2.0
-5.0
100
10
1.0
-
-
6.0
5.0
3.5
1.7
-
200
100
40
15
25
35
15
1.5
-
V
V
mV/
O
C
nA
µA
mA
A
V
GS
= 0V, I
D
= 250µA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= ±20V, V
DS
= 0V
V
DS
= Max rating, V
GS
= 0V
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125
O
C
V
GS
= 4.5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 3.0V, I
D
= 150mA
V
GS
= 4.5V, I
D
= 250mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 10V, I
D
= 500mA
V
DS
= 25V, I
D
= 250mA
V
GS
= 0V, V
DS
= 25V, f = 1MHz
I
D(ON)
ON-state drain current
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Static drain-to-source ON-state
resistance
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Ω
%/
O
C
mmho
pF
ns
V
DD
= 25V,
I
D
= 500mA,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= 500mA
V
GS
= 0V, I
SD
= 500mA
V
ns
Notes:
1.All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Thermal Characteristics
Package
TO-243AA
I
D
(continuous)
†
ID (pulsed)
480mA
1.9A
Power Dissipation
@T
A
= 25
O
C
1.6W
‡
θ
JC
(
O
C/W)
θ
JA
(
O
C/W)
15
78
‡
I
DR
†
480mA
I
DRM
1.9A
Notes:
† ID (continuous) is limited by max rated T
J
.
‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
V
DD
R
L
Pulse
Generator
t
(ON)
t
d(ON)
V
DD
Output
0V
10%
90%
t
r
t
(OFF)
t
d(OFF)
t
f
Input
10%
90%
R
GEN
D.U.T
OUTPUT
Switching Waveforms and Test Circuit
10V
Input
0V
10%
90%
2
TN2425
Typical Performance Curves
Output Characteristics
5
3.0
Saturation Characteristics
4
2.5
V
GS
= 10V
8V
6V
5V
I
D
(Amperes)
I
D
(Amperes)
V
GS
= 10V
8V
6V
5V
2.0
4V
1.5
3
2
4V
1.0
3V
1
3V
2.5V
0
0
10
20
30
40
50
0.5
2.5V
0.0
0
2
4
6
8
10
V
DS
(Volts)
Transconductance vs. Drain Current
1.0
T
A
=-55 C
0.8
O
V
DS
(Volts)
Power Dissipation vs. Case Temperature
2.0
V
DS
=15V
TO-243AA
1.5
G
FS
(siemens)
T
A
=25
O
C
0.6
T
A
=125
O
C
0.4
PD (Watts)
1.0
0.5
0.2
0.0
0.0
0.0
0.5
1.0
1.5
2.0
0
25
50
75
100
125
150
I
D
(Amperes)
Maximum Rated Safe Operating Area
10
TO-243AA (pulsed)
1.0
1.0
T
C
(
O
C)
Thermal Response Characteristics
Thermal Resistance (normalized)
TO-243AA
P
D
= 1.6W
0.8
T
C
= 25
O
C
TO-243AA (DC)
I
D
(amperes)
0.6
0.1
0.4
0.01
T A =25
O
C
0.2
0.001
1
10
100
1000
0
0.001
0.01
0.1
1.0
10
V
DS
(Volts)
3
t
p
(seconds)
TN2425
Typical Performance Curves
(cont.)
BV
DSS
Variation with Temperature
1.2
BV @ 250A
10
On Resistance vs. Drain Current
BV
DSS
(Normalized)
8
V
GS
= 4.5V
R
DS(ON)
(ohms)
1.1
6
1.0
4
V
GS
= 10V
0.9
2
0.8
-50
0
0
50
100
150
0
1
2
3
4
5
T
J
(
O
C)
Transfer Characteristics
3.0
T
A
= 25
O
C
I
D
(Amperes)
V
GS(TH)
and R
DS(ON)
w/ Temperature
2.0
1.8
R
DS(ON)
@ 10V, 0.5A
1.8
2.5
1.6
1.4
1.2
1.0
0.8
V
GS(th)
@ 1mA
1.5
2.0
T
A
= -55
O
C
1.5
T
A
= 125
O
C
1.2
1.0
0.9
0.5
V
DS
= 25V
0.6
0.4
-50
0
50
100
0.6
150
0.0
0
2
4
6
8
10
V
GS
(Volts)
Capacitance vs. Drain Source Voltage
200
f = 1MHz
T
J
(
O
C)
Gate Drive Dynamic Characteristics
10
I
D
= 480mA
8
150
V
DS
=10V
C (picofarads)
V
GS
(volts)
C
ISS
100
6
V
DS
=40V
453pF
4
50
C
OSS
C
RSS
0
0
10
20
30
40
50
2
128pF
0
0.0
1.0
2.0
3.0
4.0
5.0
V
DS
(Volts)
Q
G
(nanocoulombs)
4
R
DS(ON)
(normalized)
V
GS(th)
(normalized)
I
D
(Amperes)
TN2425
TO-243AA (SOT-89) Package Outline (N8)
4.50 ± 0.10
1.72 ± 0.10
0.40 ± 0.05
Exclusion Zone
1.50 ± 0.10
4.10 ± 0.15
2.45 ± 0.15
2.21 ± 0.08
No Vias/Traces in
this area. Shape
of pad may vary.
1.05 ± 0.15
0.42 ± 0.06
1.50 BSC
3.00 BSC
0.5 ± 0.06
Top View
Side View
Bottom View
Notes:
1. All dimensions are in millimeters; all angles in degrees.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html.)
Doc.# DSFP-TN2425
A111506
5
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