2SJ218
Silicon P-Channel MOS FET
Application
High speed power switching
Features
•
Low on-resistance
•
High speed switching
•
4 V gate drive device
Can be driven from 5 V source
•
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
2SJ218
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Symbol Min
V
(BR)DSS
V
(BR)GSS
I
GSS
–60
±20
—
—
–1.0
—
—
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
16
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.033
0.045
25
3800
2000
490
30
235
670
450
–1.35
300
Max
—
—
±10
–250
–2.0
0.042
0.06
—
—
—
—
—
—
—
—
—
—
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= –45 A, V
GS
= 0
I
F
= –45 A, V
GS
= 0,
di
F
/dt = 50 A/µs
I
D
= –20 A, V
GS
= –10 V,
R
L
= 1.5
Ω
Unit
V
V
µA
µA
V
Ω
Test conditions
I
D
= –10 mA, V
GS
= 0
I
G
= ±100 µA, V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
V
DS
= –50 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –20 A, V
GS
= –10 V*
1
I
D
= –20 A, V
GS
= –4 V*
1
I
D
= –20 A, V
DS
= –10 V*
1
V
DS
= –10 V, V
GS
= 0,
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note:
1. Pulse test
V
GS(off)
R
DS(on)
See characteristic curves of 2SJ217
3
2SJ218
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products
are requested to notify the relevant Hitachi sales offices when planning to use the products in
MEDICAL APPLICATIONS.
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
