Ordering number : ENN7537
2SJ654
P-Channl Silicon MOSFET
2SJ654
DC / DC Converter Applications
Features
•
•
•
Package Dimensions
unit : mm
2063A
[2SJ654]
10.0
3.2
3.5
7.2
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
4.5
2.8
18.1
16.0
5.6
14.0
1.6
1.2
0.75
2.4
0.7
2.55
1 2 3
2.55
2.4
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Tc=25°C
Conditions
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
Ratings
--100
±20
--8
--32
2.0
20
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
2.55
2.55
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
Conditions
ID=--1mA, VGS=0
VDS=-
-100V, VGS=0
VGS=±16V, VDS=0
VDS=-
-10V, ID=--1mA
VDS=-
-10V, ID=--4A
Ratings
min
--100
--1
±10
-
-1.2
4
6
--2.6
typ
max
Unit
V
µA
µA
V
S
Marking : J654
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22004 TS IM TA-100526 No.7537-1/4
2SJ654
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain“Miller”Charge
Diode Forward Voltage
Symbol
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--4A, VGS=--10V
ID=--4A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--50V, VGS=--10V, ID=-
-8A
VDS=--50V, VGS=-
-10V, ID=--8A
VDS=--50V, VGS=--10V, ID=-
-8A
IS=--8A, VGS=0
Ratings
min
typ
240
320
945
72
60
12
65
80
38
20
3.8
4.5
--0.92
--1.2
max
315
450
Unit
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VIN
0V
--10V
VIN
ID= --4A
RL=12.5Ω
VDD= --50V
D
PW=10µs
D.C.≤1%
VOUT
G
2SJ654
P.G
50Ω
S
--20
--18
--16
ID -- VDS
Tc=25°C
--
8V
0
--1
V
--18
--16
ID -- VGS
°
C
--25
--1
--2
VDS= --10V
Drain Current, ID -- A
Drain Current, ID -- A
--14
--12
--10
--8
--6
--4
--2
0
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
--12
--10
--8
--6
--4
--4V
VGS= --3V
0
0
Tc
=
75
--2
°
C
25
°
C
--2
5
°
C
--3
25
°
--4
Tc=
C
--6V
--14
75
°
--5
C
--6
IT06184
Drain-to-Source Voltage, VDS -- V
IT06183
Gate-to-Source Voltage, VGS -- V
No.7537-2/4
2SJ654
600
RDS(on) -- VGS
ID= --4A
700
RDS(on) -- Tc
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
500
600
500
400
Tc= 75
°C
300
400
25
°C
300
-4V
=-
V GS
A,
10V
-4
=-
=
--
S
ID
, VG
--4A
I D=
200
--25°C
200
100
100
0
--50
0
--2
--3
--4
--5
--6
--7
--8
--9
--10
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
--2.5
IT06185
3
Case Temperature, Tc --
°C
VGS(off) -- Tc
y
fs -- ID
IT06186
Forward Transfer Admittance,
y
fs -- S
VDS= --10V
ID= --1mA
Cutoff Voltage, VGS(off) -- V
--2.0
2
VDS= --10V
C
25
°
5
°
C
10
7
5
3
2
--1.5
Tc=
--2
C
75
°
--1.0
1.0
7
5
3
--0.1
--0.5
0
--50
--25
0
25
50
75
100
125
150
2
3
5
Case Temperature, Tc --
°C
--100
7
5
3
2
7 --1.0
2
3
5
7 --10
2
3
IT06187
7
5
IF -- VSD
VGS=0
Switching Time, SW Time -- ns
Drain Current, ID -- A
IT06188
SW Time -- ID
VDD= --50V
VGS= --10V
3
2
Forward Current, IF -- A
--10
7
5
3
2
--1.0
7
5
3
2
100
7
5
3
2
td (off)
tf
tr
td(on)
--0.1
7
5
3
2
--0.01
0
--0.3
Tc=
75
°
C
25
°
C
--25
°
C
10
--0.9
--1.2
IT06189
--10
7
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
3
--0.6
3
2
Ciss, Coss, Crss -- VDS
f=1MHz
Gate-to-Source Voltage, VGS -- V
Diode Forward Voltage, VSD -- V
Drain Current, ID -- A
IT06190
VGS -- Qg
--9
VDS= --50V
ID= --8A
Ciss, Coss, Crss -- pF
1000
7
5
3
2
Ciss
--8
--7
--6
--5
--4
--3
--2
--1
0
100
7
5
3
0
--5
--10
Coss
Crss
--15
--20
--25
--30
IT06191
0
5
10
15
20
IT06192
Drain-to-Source Voltage, VDS -- V
Total Gate Charge, Qg -- nC
No.7537-3/4
2SJ654
7
5
3
2
ASO
10
µ
s
2.5
PD -- Ta
Allowable Power Dissipation, PD -- W
IDP= --32A
<10µs
10
0
µ
2.0
Drain Current, ID -- A
--10
7
5
3
2
--1.0
7
5
3
2
ID= --8A
s
1m
10
DC
Operation in this area
is limited by RDS(on).
Tc=25°C
Single pulse
2
3
5
7
--10
s
1.5
10
op
0m
s
ms
era
1.0
tio
n
0.5
--0.1
--1.0
0
2
3
5
7 --100
2
V
IT06193
0
20
40
60
80
100
120
140
160
Drain-to-Source Voltage, VDS --
25
Ambient Tamperature, Ta --
°C
IT06194
PD -- Tc
Allowable Power Dissipation, PD -- W
20
15
10
5
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc --
°C
IT06195
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2004. Specifications and information herein are subject
to change without notice.
PS No.7537-4/4
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