Freescale Semiconductor
Technical Data
Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part
MRF9030M
Rev. 9, 5/2006
RF Power Field Effect Transistors
replacement. N suffix added to part number to indicate transition to lead - free terminations.
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common-source amplifier applications
in 26 volt base station equipment.
•
Typical Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 20 dB
Efficiency — 41% (Two Tones)
IMD — - 31 dBc
•
Integrated ESD Protection
•
Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
•
200_C Capable Plastic Package
•
TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
•
TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
MRF9030MR1
MRF9030MBR1
945 MHz, 30 W, 26 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
ARCHIVE INFORMATION
CASE 1265 - 08, STYLE 1
TO - 270- 2
PLASTIC
MRF9030MR1
CASE 1337 - 03, STYLE 1
TO - 272- 2
PLASTIC
MRF9030MBR1
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +65
- 0.5, + 15
139
0.93
- 65 to +150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
1.08
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
MRF9030MR1
MRF9030MBR1
Class
1 (Minimum)
M2 (Minimum)
C7 (Minimum)
C6 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF9030MR1 MRF9030MBR1
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 5. Electrical Characteristics
(T
c
= 25°c Unless Otherwise Noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 250 mAdc)
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
3
—
—
2.9
3.8
0.23
2.7
4
5
0.4
—
Vdc
Vdc
Vdc
S
ARCHIVE INFORMATION
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 0.7 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
Input Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
iss
C
oss
C
rss
—
—
—
49
27
1.2
—
—
—
pF
pF
pF
Functional Tests
(In Freescale Test Fixture)
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two - Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Two - Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
G
ps
18
20
—
dB
η
37
41
—
%
IMD
—
- 31
- 28
dBc
IRL
—
- 13
-9
dB
G
ps
—
20
—
dB
η
—
40.5
—
%
IMD
—
- 31
—
dBc
IRL
—
- 12
—
dB
MRF9030MR1 MRF9030MBR1
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
B1
V
GG
+
C8
C7
L1
L2
B2
V
DD
+
C15
C16
+
C17
+
C18
RF
INPUT
C5
Z1
C1
C2
C3
C4
C6
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
DUT Z11
C9
Z12 Z13
Z14
Z15
Z16
Z17
C14
C10
C11
C12
C13
Z18
RF
OUTPUT
ARCHIVE INFORMATION
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
0.260″ x 0.060″ Microstrip
0.240″ x 0.060″ Microstrip
0.500″ x 0.100″ Microstrip
0.200″ x 0.270″ Microstrip
0.330″ x 0.270″ Microstrip
0.140″ x 0.270″ x 0.520″, Taper
0.040″ x 0.520″ Microstrip
0.090″ x 0.520″ Microstrip
0.370″ x 0.520″ Microstrip (MRF9030MR1)
0.290″ x 0.520″ Microstrip (MRF9030MBR1)
0.130″ x 0.520″ Microstrip (MRF9030MR1)
0.210″ x 0.520″ Microstrip (MRF9030MBR1)
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Board
0.360″ x 0.270″ Microstrip
0.050″ x 0.270″ Microstrip
0.110″ x 0.060″ Microstrip
0.220″ x 0.060″ Microstrip
0.100″ x 0.060″ Microstrip
0.870″ x 0.060″ Microstrip
0.240″ x 0.060″ Microstrip
0.340″ x 0.060″ Microstrip
Taconic RF - 35- 0300,
ε
r
= 3.5
Figure 1. 930 - 960 MHz Broadband Test Circuit Schematic
Table 6. 930 - 960 MHz Broadband Test Circuit Component Designations and Values
Part
B1
B2
C1, C7, C14, C15
C2
C3, C11
C4, C12
C5, C6
C8, C16, C17
C9, C10
C13
C18
L1, L2
WB1, WB2
PCB
Description
Short Ferrite Bead, Surface Mount
Long Ferrite Bead, Surface Mount
47 pF Chip Capacitors
0.6- 4.5 Variable Capacitor, Gigatrim
3.9 pF Chip Capacitors
0.8- 8.0 Variable Capacitors, Gigatrim
6.8 pF Chip Capacitors
10
μF,
35 V Tantulum Chip Capacitors
10 pF Chip Capacitors
1.8 pF Chip Capacitor (MRF9030MR1)
0.6- 4.5 Variable Capacitor, Gigatrim (MRF9030MBR1)
220
μF
Electrolytic Chip Capacitor
12.5 nH Coilcraft Inductors
20 mil Brass Shim (0.250 x 0.250)
Etched Circuit Board
95F786
95F787
100B470JP 500X
44F3360
100B3R6BP 500X
44F3360
100B7R5JP 500X
93F2975
100B100JP 500X
100B1R8BP
44F3360
14F185
A04T- 5
RF - Design Lab
900 MHz
μ250/Viper
Rev 02
Part Number
Manufacturer
Newark
Newark
ATC
Newark
ATC
Newark
ATC
Newark
ATC
ATC
Newark
Newark
Coilcraft
RF - Design Lab
DSelectronics
MRF9030MR1 MRF9030MBR1
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
C18
C8
V
GG
B1
B2
C7
C15
C16 C17
V
DD
C1
L1
C2
C3
C5
CUT OUT AREA
C4 WB1
C6
C9
WB2
C10
L2
C14
C11
C12
C13
ARCHIVE INFORMATION
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout (MRF9030MR1)
C18
C8
V
GG
B1
C7
C15
L1
C5
WB1
CUT OUT AREA
C3
C4 C6
WB2
C9
C10
L2
B2 V
DD
C16 C17
C1
C2
C14
C11
C12
C13
MRF9030M
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 3. 930 - 960 MHz Broadband Test Circuit Component Layout (MRF9030MBR1)
MRF9030MR1 MRF9030MBR1
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
900 MHz
Rev 02
TYPICAL CHARACTERISTICS
h
, DRAIN
EFFICIENCY (%)
IMD, INTERMODULATION
DISTORTION (dBc)
−10
−12
−14
−16
−18
IRL, INPUT RETURN
LOSS (dB)
22
21
G ps , POWER GAIN (dB)
20
19
18
17
16
15
14
930
IRL
V
DD
= 26 Vdc
P
out
= 30 W (PEP)
I
DQ
= 250 mA
Two−Tone, 100 kHz Tone Spacing
935
940
945
950
955
IMD
G
ps
η
50
45
40
35
−30
−32
−34
−36
ARCHIVE INFORMATION
f, FREQUENCY (MHz)
Figure 4. Class AB Broadband Circuit Performance
IMD, INTERMODULATION DISTORTION (dBc)
21.5
21
G ps , POWER GAIN (dB)
20.5
300 mA
20
250 mA
19.5
200 mA
19
18.5
0.1
V
DD
= 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
1
10
100
−15
−20
−25
−30
−35
−40
−45
−50
−55
0.1
250 mA
1
300 mA
V
DD
= 26 Vdc
375 mA f1 = 945 MHz
f2 = 945.1 MHz
10
100
I
DQ
= 200 mA
I
DQ
= 375 mA
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Power Gain versus Output Power
Figure 6. Intermodulation Distortion versus
Output Power
IMD, INTERMODULATION DISTORTION (dBc)
−10
−20
−30
−40
−50
−60
7th Order
−70
−80
0.1
5th Order
V
DD
= 26 Vdc
I
DQ
= 250 mA
f1 = 945 MHz
f2 = 945.1 MHz
3rd Order
22
20
G ps , POWER GAIN (dB)
18
16
14
12
10
0.1
V
DD
= 26 Vdc
I
DQ
= 250 mA
f = 945 MHz
1
10
G
ps
60
50
40
30
20
10
0
100
η
, DRAIN EFFICIENCY (%)
η
1
10
100
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Power Gain and Efficiency versus
Output Power
MRF9030MR1 MRF9030MBR1
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
−38
960
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