VS-8ETU04SPbF, VS-8ETU04-1PbF
Vishay High Power Products
Ultrafast Rectifier, 8 A FRED Pt
®
FEATURES
VS-8ETU04SPbF
VS-8ETU04-1PbF
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Halogen-free according to IEC 61249-2-21
definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
Base
cathode
2
2
1
N/C
3
Anode
1
N/C
3
Anode
DESCRIPTION/APPLICATIONS
Vishay HPP’s FRED Pt
®
series are the state of the art
ultrafast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and ultrafast
recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
D
2
PAK
TO-262
PRODUCT SUMMARY
t
rr
I
F(AV)
V
R
60 ns
8A
400 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Repetitive peak forward current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FRM
T
J
, T
Stg
T
C
= 155 °C
T
C
= 25 °C
TEST CONDITIONS
MAX.
400
8
100
16
- 65 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 8 A
I
F
= 8 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 400 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
400
-
-
-
-
-
-
TYP.
-
1.19
0.94
0.2
20
14
8.0
MAX.
-
1.3
1.0
10
500
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Document Number: 94031
Revision: 11-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1
VS-8ETU04SPbF, VS-8ETU04-1PbF
Vishay High Power Products
Ultrafast Rectifier,
8 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
t
rr
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 8 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
TYP.
35
43
67
2.8
6.3
60
210
MAX.
60
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Thermal resistance, case to heatsink
Weight
Mounting torque
Marking device
Case style D
2
PAK
Case style TO-262
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth
and greased
TEST CONDITIONS
MIN.
- 65
-
-
-
-
-
6.0
(5.0)
TYP.
-
1.8
-
0.5
2.0
0.07
-
MAX.
175
2.0
50
-
-
-
12
(10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
8ETU04S
8ETU04-1
www.vishay.com
2
For technical questions, contact:
diodestech@vishay.com
Document Number: 94031
Revision: 11-Mar-10
VS-8ETU04SPbF, VS-8ETU04-1PbF
Ultrafast Rectifier,
8 A FRED Pt
®
100
1000
Vishay High Power Products
I
R
- Reverse Current (µA)
100
10
1
0.1
0.01
0.001
0.0001
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
I
F
- Instantaneous
Forward Current (A)
10
1
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 25 °C
0.1
0
0.5
1.0
1.5
2.0
2.5
0
100
200
300
400
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
100
200
300
400
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
.
1
0.0001
0.001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94031
Revision: 11-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
3
VS-8ETU04SPbF, VS-8ETU04-1PbF
Vishay High Power Products
180
Ultrafast Rectifier,
8 A FRED Pt
®
90
80
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
Allowable Case Temperature (°C)
170
DC
Square wave (D = 0.50)
Rated V
R
applied
150
70
t
rr
(ns)
160
60
50
40
140
See note (1)
130
0
2
4
6
8
10
12
30
20
100
I
F
= 16 A
I
F
= 8 A
1000
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
14
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
500
450
400
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 16 A
I
F
= 8 A
Average Power Loss (W)
12
10
8
6
4
2
0
0
2
4
6
8
10
12
DC
350
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
Q
rr
(nC)
RMS limit
300
250
200
150
100
50
0
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
www.vishay.com
4
For technical questions, contact:
diodestech@vishay.com
Document Number: 94031
Revision: 11-Mar-10
VS-8ETU04SPbF, VS-8ETU04-1PbF
Ultrafast Rectifier,
8 A FRED Pt
®
V
R
= 200 V
Vishay High Power Products
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94031
Revision: 11-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
5
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