Datasheet> 器件分类 > 存储> IDT71321LA55JI

文档预览

IDT71321LA55JI: 产品描述Dual-Port SRAM, 2KX8, 55ns, CMOS, PQCC52, 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52; 产品类别存储; 文件大小160KB，共17页; 制造商IDT (Integrated Device Technology)

下载文档详细参数选型对比全文预览

IDT71321LA55JI概述

Dual-Port SRAM, 2KX8, 55ns, CMOS, PQCC52, 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52

IDT71321LA55JI规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	LCC
包装说明	0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52
针数	52
Reach Compliance Code	not_compliant
ECCN代码	EAR99
最长访问时间	55 ns
I/O 类型	COMMON
JESD-30 代码	S-PQCC-J52
JESD-609代码	e0
长度	19.1262 mm
内存密度	16384 bit
内存集成电路类型	DUAL-PORT SRAM
内存宽度	8
湿度敏感等级	3
功能数量	1
端口数量	2
端子数量	52
字数	2048 words
字数代码	2000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	2KX8
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	QCCJ
封装等效代码	LDCC52,.8SQ
封装形状	SQUARE
封装形式	CHIP CARRIER
并行/串行	PARALLEL
峰值回流温度（摄氏度）	225
电源	5 V
认证状态	Not Qualified
座面最大高度	4.572 mm
最大待机电流	0.004 A
最小待机电流	2 V
最大压摆率	0.14 mA
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn85Pb15)
端子形式	J BEND
端子节距	1.27 mm
端子位置	QUAD
处于峰值回流温度下的最长时间	30
宽度	19.1262 mm
Base Number Matches	1

文档预览

下载PDF文档

全文
预览

IDT71321SA/LA

HIGH SPEED

IDT71421SA/LA

2K X 8 DUAL-PORT

STATIC RAM WITH INTERRUPTS

Features

High-speed access

– Commercial: 20/25/35/55ns (max.)

– Industrial: 55ns (max.)

Low-power operation

– IDT71321/IDT71421SA

—

Active: 325mW (typ.)

—

Standby: 5mW (typ.)

– IDT71321/421LA

—

Active: 325mW (typ.)

—

Standby: 1mW (typ.)

Two

INT

flags for port-to-port communications

MASTER IDT71321 easily expands data bus width to 16-or-

more-bits using SLAVE IDT71421

On-chip port arbitration logic (IDT71321 only)

BUSY

output flag on IDT71321;

BUSY

input on IDT71421

Fully asynchronous operation from either port

Battery backup operation – 2V data retention (LA only)

TTL-compatible, single 5V ±10% power supply

Available in 52-Pin PLCC, 64-Pin TQFP, and 64-Pin STQFP

Industrial temperature range (–40°C to +85°C) is available

for selected speeds

Functional Block Diagram

R/W

I/O

- I/O

I/O

Control

BUSY

10L

(1,2)

I/O

Control

I/O

-I/O

BUSY

Address

Decoder

(1,2)

MEMORY

ARRAY

Address

Decoder

10R

R/W

ARBITRATION

and

INTERRUPT

LOGIC

R/W

INT

(2)

INT

2691 drw 01

(2)

NOTES:

1. IDT71321 (MASTER):

BUSY

is open drain output and requires pullup resistor of 270Ω.

IDT71421 (SLAVE):

BUSY

is input.

2. Open drain output: requires pullup resistor of 270Ω.

MARCH 1999

DSC-2691/8

IDT71321LA55JI相似产品对比

	IDT71321LA55JI	IDT71321LA55TFI	IDT71321SA55PFI	IDT71321LA55PFI	IDT71321SA55TFI	IDT71421LA55JI	IDT71421LA55PFI	IDT71421SA55PFI	IDT71421SA55TFI
描述	Dual-Port SRAM, 2KX8, 55ns, CMOS, PQCC52, 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52	Dual-Port SRAM, 2KX8, 55ns, CMOS, PQFP64, 10 X 10 MM, 1.40 MM HEIGHT, STQFP-64	Dual-Port SRAM, 2KX8, 55ns, CMOS, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-64	Dual-Port SRAM, 2KX8, 55ns, CMOS, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-64	Dual-Port SRAM, 2KX8, 55ns, CMOS, PQFP64, 10 X 10 MM, 1.40 MM HEIGHT, STQFP-64	Dual-Port SRAM, 2KX8, 55ns, CMOS, PQCC52, 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52	Dual-Port SRAM, 2KX8, 55ns, CMOS, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-64	Dual-Port SRAM, 2KX8, 55ns, CMOS, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-64	Dual-Port SRAM, 2KX8, 55ns, CMOS, PQFP64, 10 X 10 MM, 1.40 MM HEIGHT, STQFP-64
是否无铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
零件包装代码	LCC	QFP	QFP	QFP	QFP	LCC	QFP	QFP	QFP
包装说明	0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52	TFQFP, QFP64,.47SQ,20	14 X 14 MM, 1.40 MM HEIGHT, TQFP-64	14 X 14 MM, 1.40 MM HEIGHT, TQFP-64	10 X 10 MM, 1.40 MM HEIGHT, STQFP-64	0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52	LQFP, QFP64,.66SQ,32	LQFP, QFP64,.66SQ,32	TFQFP, QFP64,.47SQ,20
针数	52	64	64	64	64	52	64	64	64
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	55 ns	55 ns	55 ns	55 ns	55 ns	55 ns	55 ns	55 ns	55 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	S-PQCC-J52	S-PQFP-G64	S-PQFP-G64	S-PQFP-G64	S-PQFP-G64	S-PQCC-J52	S-PQFP-G64	S-PQFP-G64	S-PQFP-G64
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0
长度	19.1262 mm	10 mm	14 mm	14 mm	10 mm	19.1262 mm	14 mm	14 mm	10 mm
内存密度	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit
内存集成电路类型	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM
内存宽度	8	8	8	8	8	8	8	8	8
湿度敏感等级	3	3	3	3	3	3	3	3	3
功能数量	1	1	1	1	1	1	1	1	1
端口数量	2	2	2	2	2	2	2	2	2
端子数量	52	64	64	64	64	52	64	64	64
字数	2048 words	2048 words	2048 words	2048 words	2048 words	2048 words	2048 words	2048 words	2048 words
字数代码	2000	2000	2000	2000	2000	2000	2000	2000	2000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
组织	2KX8	2KX8	2KX8	2KX8	2KX8	2KX8	2KX8	2KX8	2KX8
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	QCCJ	TFQFP	LQFP	LQFP	TFQFP	QCCJ	LQFP	LQFP	TFQFP
封装等效代码	LDCC52,.8SQ	QFP64,.47SQ,20	QFP64,.66SQ,32	QFP64,.66SQ,32	QFP64,.47SQ,20	LDCC52,.8SQ	QFP64,.66SQ,32	QFP64,.66SQ,32	QFP64,.47SQ,20
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	CHIP CARRIER	FLATPACK, THIN PROFILE, FINE PITCH	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, THIN PROFILE, FINE PITCH	CHIP CARRIER	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, THIN PROFILE, FINE PITCH
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	225	240	240	240	240	225	240	240	240
电源	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	4.572 mm	1.2 mm	1.6 mm	1.6 mm	1.2 mm	4.572 mm	1.6 mm	1.6 mm	1.2 mm
最大待机电流	0.004 A	0.01 A	0.03 A	0.01 A	0.03 A	0.004 A	0.004 A	0.03 A	0.03 A
最小待机电流	2 V	2 V	4.5 V	2 V	4.5 V	2 V	2 V	4.5 V	4.5 V
最大压摆率	0.14 mA	0.14 mA	0.19 mA	0.14 mA	0.19 mA	0.14 mA	0.14 mA	0.19 mA	0.19 mA
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	TIN LEAD	Tin/Lead (Sn85Pb15)	TIN LEAD
端子形式	J BEND	GULL WING	GULL WING	GULL WING	GULL WING	J BEND	GULL WING	GULL WING	GULL WING
端子节距	1.27 mm	0.5 mm	0.8 mm	0.8 mm	0.5 mm	1.27 mm	0.8 mm	0.8 mm	0.5 mm
端子位置	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
处于峰值回流温度下的最长时间	30	20	20	20	20	30	20	20	20
宽度	19.1262 mm	10 mm	14 mm	14 mm	10 mm	19.1262 mm	14 mm	14 mm	10 mm
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	-	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)

IDT71321LA55JI

IDT71321LA55JI概述

IDT71321LA55JI规格参数

文档预览

IDT71321LA55JI相似产品对比

推荐资源