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70V3389S5PRFGI: 产品描述Dual-Port SRAM, 64KX18, 5ns, CMOS, PQFP128, 14 X 20 MM X 1.40 MM, GREEN, PLASTIC, TQFP-128; 产品类别存储存储; 文件大小176KB，共17页; 制造商IDT (Integrated Device Technology); 标准

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70V3389S5PRFGI概述

Dual-Port SRAM, 64KX18, 5ns, CMOS, PQFP128, 14 X 20 MM X 1.40 MM, GREEN, PLASTIC, TQFP-128

70V3389S5PRFGI规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	QFP
包装说明	LFQFP, QFP128,.63X.87,20
针数	128
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.A
最长访问时间	5 ns
其他特性	PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE
最大时钟频率 (fCLK)	100 MHz
I/O 类型	COMMON
JESD-30 代码	R-PQFP-G128
JESD-609代码	e3
长度	20 mm
内存密度	1179648 bit
内存集成电路类型	DUAL-PORT SRAM
内存宽度	18
湿度敏感等级	3
功能数量	1
端口数量	2
端子数量	128
字数	65536 words
字数代码	64000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	64KX18
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	LFQFP
封装等效代码	QFP128,.63X.87,20
封装形状	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE, FINE PITCH
并行/串行	PARALLEL
峰值回流温度（摄氏度）	260
电源	2.5/3.3,3.3 V
认证状态	Not Qualified
座面最大高度	1.6 mm
最大待机电流	0.03 A
最小待机电流	3.15 V
最大压摆率	0.415 mA
最大供电电压 (Vsup)	3.45 V
最小供电电压 (Vsup)	3.15 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Matte Tin (Sn) - annealed
端子形式	GULL WING
端子节距	0.5 mm
端子位置	QUAD
处于峰值回流温度下的最长时间	30
宽度	14 mm
Base Number Matches	1

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IDT70V3389S

HIGH-SPEED 3.3V 64K x 18

SYNCHRONOUS PIPELINED

DUAL-PORT STATIC RAM

WITH 3.3V OR 2.5V INTERFACE

LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018

Features

◆

True Dual-Port memory cells which allow simultaneous

access of the same memory location

◆

High-speed clock to data access

– Commercial: 4.2/5/6ns (max.)

– Industrial: 5ns (max)

◆

Pipelined output mode

◆

Counter enable and reset features

◆

Dual chip enables allow for depth expansion without

additional logic

◆

Full synchronous operation on both ports

– 7.5ns cycle time, 133MHz operation (9.6 Gbps bandwidth)

– Fast 4.2ns clock to data out

– 1.8ns setup to clock and 0.7ns hold on all control, data, and

address inputs @ 133MHz

◆

– Data input, address, byte enable and control registers

– Self-timed write allows fast cycle time

Separate byte controls for multiplexed bus and bus

matching compatibility

LVTTL- compatible, single 3.3V (±150mV) power supply for

core

LVTTL- compatible, selectable 3.3V (±150mV)/2.5V (±125mV)

power supply for I/Os and control signals on each port

Industrial temperature range (-40°C to +85°C) is

available for selected speeds

Available in a 128-pin Thin Quad Plastic Flatpack (TQFP),

208-pin fine pitch Ball Grid Array, and 256-pin Ball

Grid Array

Green parts available, see ordering information

Functional Block Diagram

R/W

Dout0-8_L

Dout9-17_L

Dout0-8_R

Dout9-17_R

64K x 18

MEMORY

ARRAY

I/O

0 L

- I/O

1 7 L

CLK

Din_L

Din_R

I/O

- I/O

17R

CLK

15L

CNTRST

ADS

CNTEN

Counter/

Address

Reg.

ADDR_L

ADDR_R

Counter/

Address

Reg.

15R

CNTRST

ADS

CNTEN

4832 tbl 01

FEBRUARY 2018

DSC 4832/14

70V3389S5PRFGI相似产品对比

	70V3389S5PRFGI	70V3389S5BCGI	70V3389S5BFGI	70V3389S6PRFG
描述	Dual-Port SRAM, 64KX18, 5ns, CMOS, PQFP128, 14 X 20 MM X 1.40 MM, GREEN, PLASTIC, TQFP-128	Dual-Port SRAM, 64KX18, 5ns, CMOS, CBGA256, 17 X 17 MM X 1.40 MM, 1 MM PITCH, GREEN, BGA-256	Dual-Port SRAM, 64KX18, 5ns, CMOS, CBGA208, 15 X 15 MM X 1.40 MM, 0.80 MM PITCH, GREEN, FPBGA-208	Dual-Port SRAM, 64KX18, 6ns, CMOS, PQFP128, 14 X 20 MM X 1.40 MM, GREEN, PLASTIC, TQFP-128
是否无铅	不含铅	不含铅	不含铅	不含铅
是否Rohs认证	符合	符合	符合	符合
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
零件包装代码	QFP	BGA	BGA	QFP
包装说明	LFQFP, QFP128,.63X.87,20	LBGA, BGA256,16X16,40	TFBGA, BGA208,17X17,32	LFQFP, QFP128,.63X.87,20
针数	128	256	208	128
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	5 ns	5 ns	5 ns	6 ns
其他特性	PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE	PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE	PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE	PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE
最大时钟频率 (fCLK)	100 MHz	100 MHz	100 MHz	83 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PQFP-G128	S-CBGA-B256	S-CBGA-B208	R-PQFP-G128
JESD-609代码	e3	e1	e1	e3
长度	20 mm	17 mm	15 mm	20 mm
内存密度	1179648 bit	1179648 bit	1179648 bit	1179648 bit
内存集成电路类型	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM
内存宽度	18	18	18	18
湿度敏感等级	3	3	3	3
功能数量	1	1	1	1
端口数量	2	2	2	2
端子数量	128	256	208	128
字数	65536 words	65536 words	65536 words	65536 words
字数代码	64000	64000	64000	64000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	70 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-
组织	64KX18	64KX18	64KX18	64KX18
输出特性	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY
封装代码	LFQFP	LBGA	TFBGA	LFQFP
封装等效代码	QFP128,.63X.87,20	BGA256,16X16,40	BGA208,17X17,32	QFP128,.63X.87,20
封装形状	RECTANGULAR	SQUARE	SQUARE	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	260	260	260	260
电源	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.6 mm	1.7 mm	1.2 mm	1.6 mm
最大待机电流	0.03 A	0.03 A	0.03 A	0.015 A
最小待机电流	3.15 V	3.15 V	3.15 V	3.15 V
最大压摆率	0.415 mA	0.415 mA	0.415 mA	0.31 mA
最大供电电压 (Vsup)	3.45 V	3.45 V	3.45 V	3.45 V
最小供电电压 (Vsup)	3.15 V	3.15 V	3.15 V	3.15 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL
端子面层	Matte Tin (Sn) - annealed	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Matte Tin (Sn) - annealed
端子形式	GULL WING	BALL	BALL	GULL WING
端子节距	0.5 mm	1 mm	0.8 mm	0.5 mm
端子位置	QUAD	BOTTOM	BOTTOM	QUAD
处于峰值回流温度下的最长时间	30	30	30	30
宽度	14 mm	17 mm	15 mm	14 mm
Base Number Matches	1	1	1	1

70V3389S5PRFGI

70V3389S5PRFGI概述

70V3389S5PRFGI规格参数

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