Ordering number : ENN8277
2SJ635
P-Channel Silicon MOSFET
2SJ635
Features
•
•
•
•
General-Purpose Switching Device
Applications
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
DC / DC Converter.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
--60
±20
--12
--48
1
30
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
Conditions
ID=--1mA, VGS=0V
VDS=-
-60V, VGS=0V
VGS=±16V, VDS=0V
VDS=-
-10V, ID=--1mA
VDS=-
-10V, ID=-
-6A
ID=--6A, VGS=-
-10V
ID=--6A, VGS=-
-4V
VDS=-
-20V, f=1MHz
VDS=-
-20V, f=1MHz
VDS=-
-20V, f=1MHz
Ratings
min
--60
--1
±10
--1.2
9
13
45
65
2200
235
165
60
92
--2.6
typ
max
Unit
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005PA MS IM TB-00001450 No.8277-1/4
2SJ635
25
°
C
--4
--1
0.0
--8
V
.0V
--6
.0
--4
.0
V
--14
--12
--10
--8
--6
--4
--2
0
VDS= --10V
Drain Current, ID -- A
--5
.0
V
--10
--8
--6
--3.0V
--4
Drain Current, ID -- A
--2
VGS= --2.5V
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
0
--1
--2
25
°
--25
C
°
C
--3
Tc=
75
°
C
Tc= --25
°
C
75
°
C
--12
ID -- VDS
V
--16
ID -- VGS
--5
IT09426
Drain-to-Source Voltage, VDS -- V
140
IT09425
140
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
120
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Tc=25°C
ID= --6A
120
100
100
80
80
--
I D=
60
6A
,
= --
GS
V
4V
60
--6A
I D=
0V
= --1
, VGS
40
40
20
0
0
--2
--4
--6
--8
--10
--12
--14
--16
20
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
5
y
fs -- ID
IT09427
3
2
--10
7
5
Case Temperature, Tc --
°C
IT09428
IS -- VSD
VGS=0V
Forward Transfer Admittance,
y
fs -- S
VDS= --10V
3
Source Current, IS -- A
2
10
7
5
3
2
--2
c=
T
°
C
25
5
°
C
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
7
5
°
C
1.0
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
3
5
--0.01
--0.2
--0.4
Tc=7
5
--0.6
--25
°
C
--0.8
25
°
C
°
C
--1.0
--1.2
IT09430
Drain Current, ID -- A
5
3
IT09429
5
3
SW Time -- ID
td(off)
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
VDD= --30V
VGS= --10V
Switching Time, SW Time -- ns
Ciss
Ciss, Coss, Crss -- pF
2
2
tf
100
7
5
3
2
1000
7
5
3
2
tr
td(on)
Coss
Crss
10
--0.1
100
2
3
5
7 --1.0
2
3
5
7 --10
2
3
5
0
--10
--20
--30
--40
--50
--60
IT09432
Drain Current, ID -- A
IT09431
Drain-to-Source Voltage, VDS -- V
No.8277-3/4
2SJ635
--10
--9
VGS -- Qg
VDS= --30V
ID= --12A
Drain Current, ID -- A
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
ASO
IDP= --48A
10
≤
10µs
Gate-to-Source Voltage, VGS -- V
--8
--7
--6
--5
--4
--3
--2
--1
0
0
5
10
15
20
25
30
35
40
45
ID= --12A
DC
op
1m
10
era
t
0
µ
s
s
m
s
Operation in
this area is
limited by RDS(on).
ion
2
--0.1
--0.1
Tc=25°C
Single pulse
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Total Gate Charge, Qg -- nC
1.2
IT09433
35
PD -- Ta
Allowable Power Dissipation, PD -- W
Drain-to-Source Voltage, VDS -- V
5 7 --100
IT09434
PD -- Tc
Allowable Power Dissipation, PD -- W
1.0
30
25
0.8
20
0.6
15
0.4
10
0.2
5
0
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT09742
Case Temperature, Tc --
°C
IT09435
Note on usage : Since the 2SJ635 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2005. Specifications and information herein are subject
to change without notice.
PS No.8277-4/4
微控制器 MCU
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