ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
Case Style 1.5KE
• Low incremental surge resistance
• Solder dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
V
WM
P
PPM
P
D
I
FSM
T
J
max.
5.0 V to 18 V
1500 W
6.5 W
200 A
175 °C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of sensor
units for consumer, computer, industrial and
telecommunication.
MECHANICAL DATA
Case:
Molded epoxy body over passivated junction
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C suffix (e.g. ICTE-18C).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform
(1)
(Fig. 1)
Peak pulse current with a 10/1000 µs waveform
(1)
(Fig. 3)
Power dissipation on infinite heatsink at T
L
= 75 °C (Fig. 8)
Peak forward surge current 8.3 ms single half sine-wave uni-directional
only
(2)
Maximum instantaneous forward voltage at 100 A for uni-directional only
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
LIMIT
1500
See next table
6.5
200
3.5
- 55 to + 175
UNIT
W
A
W
A
V
°C
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Document Number: 88356
Revision: 04-Sep-07
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (JEDEC REGISTERED DATA)
(T
A
= 25 °C unless otherwise noted)
JEDEC TYPE
NUMBER
GENERAL
SEMICONDUCTOR
PART NUMBER
STAND-OFF
VOLTAGE
V
WM
(V)
MINIMUM
(3)
BREAKDOWN
VOLTAGE
AT 1.0 mA
V
BR
(V)
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(µA)
MAXIMUM
CLAMPING
VOLTAGE
AT I
PP
= 1.0 A
V
C
(V)
MAXIMUM
CLAMPING
VOLTAGE AT
I
PP
= 10 A
V
C
(V)
MAXIMUM
PEAK
PULSE
CURRENT
I
PP
(A)
UNI-DIRECTIONAL TYPES
1N6373
(2)
1N6374
1N6375
1N6376
1N6377
1N6378
ICTE-5
(2)
ICTE-8
ICTE-10
ICTE-12
ICTE-15
ICTE-18
5.0
8.0
10.0
12.0
15.0
18.0
6.0
9.4
11.7
14.1
17.6
21.2
300
25.0
2.0
2.0
2.0
2.0
7.1
11.3
13.7
16.1
20.1
24.2
7.5
11.5
14.1
16.5
20.6
25.2
160
100
90
70
60
50
BI-DIRECTIONAL TYPES
1N6382
1N6383
1N6384
1N6385
1N6386
Notes:
(1) “C” Suffix indicates bi-directional
(2) ICTE-5 and 1N6373 are not available as bi-directional
(3) The minimum breakdown voltage as shown takes into consideration the ± 1 V tolerance normally specified for power supply regulation on
most integrated circuit manufacturers data sheets. Please consult factory for devices that require reduced clamping voltages where tighter
regulated power supply voltages are employed
(4) Clamping factor: 1.33 at full rated power; 1.20 at 50 % rated power; Clamping factor: the ratio of the actual V
C
(Clamping Voltage) to the
V
BR
(Breakdown Voltage) as measured on a specific device
ICTE-8C
ICTE-10C
ICTE-12C
ICTE-15C
ICTE-18C
8.0
10.0
12.0
15.0
18.0
9.4
11.7
14.1
17.6
21.2
50.0
2.0
2.0
2.0
2.0
11.4
14.1
16.7
20.8
24.8
11.6
14.5
17.1
21.4
25.5
100
90
70
60
50
ORDERING INFORMATION
(Example)
PREFERRED P/N
ICTE-5-E3/54
ICTE-5HE3/54
(1)
Note:
(1) Automotive grade AEC Q101 qualified
UNIT WEIGHT (g)
0.968
0.968
PREFERRED PACKAGE CODE
54
54
BASE QUANTITY
1400
1400
DELIVERY MODE
13" diameter paper tape and reel
13" diameter paper tape and reel
Document Number: 88356
Revision: 04-Sep-07
www.vishay.com
117
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100
100000
P
PPM
- Peak Pulse Power (kW)
C
J
- Junction Capacitance (pF)
Non-Repetitive
Pulse
Waveform
shown in Fig. 3
T
A
= 25 °C
10
Measured at
Zero Bias
10000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
1
1000
Measured at Stand-Off
Voltage V
WM
0.1
0.1
µs
1.0
µs
10
µs
100
µs
1.0 ms
10 ms
100
1.0
10
100
200
t
d
- Pulse
Width
(s)
V
BR
- Breakdown
Voltage
(V)
Figure 1. Peak Pulse Power Rating Curve
Figure 4. Typical Junction Capacitance Uni-Directional
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage,
%
100
100000
75
C
J
- Junction Capacitance (pF)
Measured at
Zero Bias
Bi-Directional Type
10000
50
Non-Repetitive
Pulse
Waveform
shown in Fig. 3
T
A
= 25 °C
1000
25
0
0
25
50
75
100
125
150
175
200
Measured at Stand-Off
Voltage V
WM
100
1.0
10
100
200
T
J
- Initial Temperature (°C)
V
BR
- Breakdown
Voltage
(V)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 5. Typical Junction Capacitance
I
FSM
- Peak Forward Surge Current (A)
150
I
PPM
- Peak Pulse Current,
%
I
RSM
t
r
= 10
µs
Peak
Value
I
PPM
T
J
= 25 °C
Pulse
Width
(t
d
)
is defined as the Point
where
the Peak Current
decays to 50
%
of I
PPM
200
T
J
= T
J
max.
8.3
ms Single Half Sine-Wave
100
100
Half
Value
- I
PP
I
PPM
2
50
10/1000
µs Waveform
as defined
by
R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
50
10
1
5
10
50
100
t - Time (ms)
Number
of Cycles at 60 Hz
Figure 3. Pulse Waveform
Figure 6. Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
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118
Document Number: 88356
Revision: 04-Sep-07
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
50
Uni-Directional Only
T
A
= 25 °C
8.0
7.0
I
PP
- Peak Pulse Current (A)
P
D
- Power Dissipation (W)
6.0
5.0
4.0
3.0
2.0
1.0
L = 0.375" (9.5 mm)
Lead Lengths
10
ICTE-15
1
6
8
10
12
14
16
18
20
22
24
26
28
ICTE-18
ICTE-10
ICTE-12
ICTE-8
ICTE-5
0
0
25
50
75
100
125
150
175
200
V
C
- Clamping
Voltage
(V)
T
L
- Lead Temperature (°C)
Figure 7. Typical Characteristics Clamping Voltage
Figure 8. Power Derating Curve
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Case Style 1.5KE
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.042 (1.07)
0.038 (0.96)
DIA.
Document Number: 88356
Revision: 04-Sep-07
www.vishay.com
119
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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