r
r
TSL250RD, TSL251RD, TSL260RD, TSL261RD
LIGHT-TO-VOLTAGE OPTICAL SENSORS
TAOS050K
−
OCTOBER 2007
D
Monolithic Silicon IC Containing
D
D
D
D
D
D
D
D
Photodiode, Operational Amplifier, and
Feedback Components
Converts Light Intensity to a Voltage
High Irradiance Responsivity, Typically
−
64 mV/(mW/cm
2
) at
l
p
= 640 nm
(TSL250RD)
−
58 mV/(mW/cm
2
) at
l
p
= 940 nm
(TSL260RD)
Single Voltage Supply Operation
Low Dark (Offset) Voltage . . . 10 mV Max
Low Supply Current . . . 1.1 mA Typical
Wide Supply-Voltage Range . . . 2.7 V to 5.5 V
Low-Profile Surface-Mount Package:
−
Clear Plastic for TSL250RD and
TSL251RD
−
Visible Light-Cutoff Filter Plastic for
TSL260RD and TSL261RD
Lead (Pb) Free and RoHS Compliant
Package
PACKAGE D
8-LEAD SOIC
(TOP VIEW)
NC 1
NC 2
NC 3
GND 4
8 NC
7 OUT
6 V
DD
5 NC
Description
The TSL250RD, TSL251RD, TSL260RD, and TSL261RD are light-to-voltage optical sensors, each combining
a photodiode and a transimpedance amplifier on a single monolithic IC. The TSL250RD and TSL260RD have
an equivalent feedback resistance of 16 MΩ and a photodiode measuring 1 square mm. The TSL251RD and
TSL261RD have an equivalent feedback resistance of 8 MΩ and a photodiode measuring 0.5 square mm.
Output voltage is directly proportional to the light intensity (irradiance) on the photodiode. These devices have
improved amplifier offset-voltage stability and low power consumption.
Functional Block Diagram
−
+
Voltage
Output
Terminal Functions
TERMINAL
NAME
GND
OUT
V
DD
NO.
4
7
6
Output voltage.
Supply voltage.
r
Copyright
E
2007, TAOS Inc.
DESCRIPTION
Ground (substrate). All voltages are referenced to GND.
The
LUMENOLOGY
r
Company
Texas Advanced Optoelectronic Solutions Inc.
1001 Klein Road
S
Suite 300
S
Plano, TX 75074
S
(972) 673-0759
r
www.taosinc.com
1
TSL250RD, TSL251RD, TSL260RD, TSL261RD
LIGHT-TO-VOLTAGE OPTICAL SENSORS
TAOS050K
−
OCTOBER 2007
Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)
†
Supply voltage, V
DD
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Output current, I
O
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
10 mA
Duration of short-circuit current at (or below) 25°C (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 s
Operating free-air temperature range, T
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−25°C
to 85°C
Storage temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−25°C
to 85°C
Solder conditions in accordance with JEDEC J−STD−020A, maximum temperature (see Note 3) . . . 260°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltages are with respect to GND.
2. Output may be shorted to supply.
3. The device may be hand soldered provided that heat is applied only to the solder pad and no contact is made between the tip of
the solder iron and the device lead. The maximum time heat should be applied to the device is 5 seconds.
Recommended Operating Conditions
MIN
Supply voltage, V
DD
Operating free-air temperature, T
A
2.7
0
NOM
MAX
5.5
70
UNIT
V
°C
Electrical Characteristics at V
DD
= 5 V, T
A
= 25
°
C, R
L
= 10 k
Ω
(unless otherwise noted) (see Notes
3, 4, 5, and 6)
PARAMETER
Dark
voltage
Maximum
output
voltage
TEST
S
CONDITIONS
E
e
= 0
V
DD
= 4.5 V
E
e
= 31
μW/cm
2
V
O
Output
voltage
E
e
= 124
μW/cm
2
E
e
= 34
μW/cm
2
E
e
= 132
μW/cm
2
R
e
Irradiance
responsivity
See Note 7
V
O
= 2 V @ 25°C,
T
A
= 0°C to 70°C
(see Note 8)
E
e
= 31
μW/cm
2
I
DD
Supply
current
E
e
= 124
μW/cm
2
E
e
= 34
μW/cm
2
E
e
= 132
μW/cm
2
NOTES: 4.
5.
6.
7.
8.
64
2
0.1
1.1
1.7
1.1
1.7
1.1
1.7
1.1
1.7
mA
16
2
0.1
58
8
0.4
λp
= 640 nm
TSL250RD
MIN
0
3
1.5
TYP
5
3.3
2
2.5
1.5
2
2.5
1
2
3
1
2
15
8
0.4
3
mV/
(μW/
cm
2
)
mV/°C
%/°C
V
MAX
10
MIN
0
3
TSL251RD
TYP
5
3.3
MAX
10
MIN
0
3
TYP
5
3.3
λp
= 940 nm
TSL260RD
MAX
10
MIN
0
3
TSL261RD
TYP
5
3.3
MAX
10
mV
V
UNIT
V
D
V
OM
Temperature
coefficient of
output voltage (V
O
)
Measurements are made with R
L
= 10 kΩ between output and ground.
Optical measurements are made using small-angle incident radiation from an LED optical source.
The 640 nm input irradiance E
e
is supplied by an AlInGaP LED with peak wavelength
λ
p
= 640 nm.
The 940 nm input irradiance E
e
is supplied by a GaAs LED with peak wavelength
λ
p
= 940 nm.
Irradiance responsivity is characterized over the range V
O
= V
D
to 3 V. The best-fit straight line of Output Voltage V
O
versus irradiance E
e
over this range will typically have a positive extrapolated V
O
value for E
e
= 0.
9. The temperature coefficient of output voltage measurement is made by adjusting irradiance such that V
O
is approximately 2 V at
25°C and then with irradiance held constant, measuring V
O
while varying the temperature between 0°C and 70°C.
r
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LUMENOLOGY
r
Company
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2007, TAOS Inc.
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TSL250RD, TSL251RD, TSL260RD, TSL261RD
LIGHT-TO-VOLTAGE OPTICAL SENSORS
TAOS050K
−
OCTOBER 2007
Dynamic Characteristics at V
DD
= 5 V, T
A
= 25
°
C, R
L
= 10 k
Ω
(unless otherwise noted) (see Figure 1)
PARAMETER
Output
pulse rise
time
Output
pulse fall
time
Output
noise
voltage
TEST
S
CONDITIONS
λp
= 640 nm
TSL250RD
MIN
TYP
260
MAX
MIN
TSL251RD
TYP
70
MAX
MIN
TYP
260
λp
= 940 nm
TSL260RD
MAX
MIN
TSL261RD
TYP
70
MAX
μs
UNIT
t
r
V
O(peak)
= 2 V
t
f
V
O(peak)
= 2 V
E
e
= 0,
f = 1000 Hz
260
70
260
70
μs
V
n
0.8
0.7
0.8
0.7
μV/
(√(Hz))
PARAMETER MEASUREMENT INFORMATION
V
DD
Pulse
Generator
LED
(see Note A)
TSL2xxRD
1
TEST CIRCUIT
−
+
R
L
Output
(see Note B)
10%
2
E
e
Input
3
Output
t
r
90%
90%
10%
t
f
VOLTAGE WAVEFORM
NOTES: A. The input irradiance is supplied by a pulsed light-emitting diode with t
r
< 1
μs,
t
f
< 1
μs.
B. The output waveform is monitored on an oscilloscope with the following characteristics: t
r
< 100 ns, Z
i
≥
1 MΩ, C
i
≤
20 pF.
Figure 1. Switching Times
The
LUMENOLOGY
r
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2007, TAOS Inc.
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TSL250RD, TSL251RD, TSL260RD, TSL261RD
LIGHT-TO-VOLTAGE OPTICAL SENSORS
TAOS050K
−
OCTOBER 2007
TYPICAL CHARACTERISTICS
OUTPUT VOLTAGE
vs
IRRADIANCE
10
V
DD
= 5 V
λ
p
= 640 nm
R
L
= 10 kW
T
A
= 25°C
10
V
DD
= 5 V
λ
p
= 940 nm
R
L
= 10 kW
T
A
= 25°C
OUTPUT VOLTAGE
vs
IRRADIANCE
Output Voltage (V
O
−
V
D
) — V
1
Output Voltage (V
O
−
V
D
) — V
1
TSL250RD
0.1
TSL251RD
TSL260RD
0.1
TSL261RD
0.01
0.1
1
10
100
1000
E
e
— Irradiance —
mW/cm
2
0.01
0.1
1
10
100
1000
E
e
— Irradiance —
mW/cm
2
Figure 2
Figure 3
PHOTODIODE SPECTRAL RESPONSIVITY
1.2
T
A
= 25°C
1
PHOTODIODE SPECTRAL RESPONSIVITY
T
A
= 25°C
1.0
Relative Responsivity
0.8
Relative Responsivity
0.8
0.6
0.6
0.4
TSL260RD
0.2
TSL261RD
0.4
TSL250RD
0.2
TSL251RD
0
300
0
400
500
600 700 800 900
λ
−
Wavelength
−
nm
1000 1100
600
700
800
900
1000
λ
−
Wavelength
−
nm
1100
Figure 4
Figure 5
Copyright
E
2007, TAOS Inc.
r
r
The
LUMENOLOGY
r
Company
4
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TSL250RD, TSL251RD, TSL260RD, TSL261RD
LIGHT-TO-VOLTAGE OPTICAL SENSORS
TAOS050K
−
OCTOBER 2007
TYPICAL CHARACTERISTICS
MAXIMUM OUTPUT VOLTAGE
vs
SUPPLY VOLTAGE
5
V
OM
— Maximum Output Voltage — V
R
L
= 10 kΩ
T
A
= 25°C
I
DD
— Supply Current — mA
1.4
V
DD
= 5 V
R
L
= 10 kW
T
A
= 25°C
SUPPLY CURRENT
vs
OUTPUT VOLTAGE
4
1.2
3
1
2
0.8
1
0.6
0
2.5
3
3.5
4
4.5
V
DD
−
Supply Voltage
−
V
5
5.5
0.4
0
1
2
3
V
O
−
Output Voltage
−
V
4
Figure 6
Figure 7
NORMALIZED OUTPUT VOLTAGE
vs.
ANGULAR DISPLACEMENT
1
V
O
— Output Voltage — Normalized
0.8
Optical Axis
Angular Displacement is
Equal for Both Aspects
0
−90
−60
−30
0
30
60
Q
−
Angular Displacement
−
°
90
0.6
0.4
0.2
Figure 8
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LUMENOLOGY
r
Company
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Copyright
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2007, TAOS Inc.
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