Semiconductor
SUF2001
Dual N and P-channel Trench MOSFET
Portable Equipment Application.
Notebook Application.
Features
•
Low V
GS(th)
: V
GS(th)
=1.0~3.0V
•
Small footprint due to small package
•
Low R
DS (ON)
: Low R
DS(ON)
=N-ch:24
mΩ
, P-ch:66
mΩ
Ordering Information
Type NO.
SUF2001
Marking
SUF2001
Package Code
SOP-8
Outline Dimensions
5.88~6.18
3.70~3.90
0.27 Max.
0.52 Max.
unit :
mm
3.81 Typ.
0.27 Max.
0.46 Min.
Block Diagram
1.24~1.44
1.27 Typ.
4.81~5.01
PIN Connections
1. Source 1
2. Gate 1
3. Source 2
4. Gate 2
5. Drain 2
6. Drain 2
7. Drain 1
8. Drain 1
KSD-T7F002-000
1
SUF2001
Absolute maximum ratings
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (Pulsed)
*
Total Power dissipation
**
(Ta=25°C)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
I
AS
E
AS
①
①
I
AR
E
AR
T
J
T
stg
Rating
N-Ch
P-Ch
30
±20
5.8
23.2
2.0
②5.8
②72
5.8
3.4
⑥-5.3
⑥33
-5.3
1.6
-5.3
-21.2
-30
Unit
V
V
A
A
W
A
mJ
A
mJ
°C
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
** Device mounted on a glass-epoxy board
150
-55~150
Characteristic
Thermal
resistance
Junction-ambient
Symbol
R
th(J-a)
Typ.
62.5
Max
-
Unit
℃/W
KSD-T7F002-000
2
SUF2001
N-CH Electrical Characteristics
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
④
(Ta=25°C)
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(ON)
g
fs
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Test Condition
I
D
=250µA, V
GS
=0
I
D
=250µA, V
DS
= V
GS
V
DS
=30V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
V
GS
=10V, I
D
=2.9A
V
GS
=5.0V, I
D
=2.9A
V
DS
=5V, I
D
=5.8A
V
GS
=0V, V
DD
=10V,
f=1MHz
Min.
30
1.0
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
24
28
12
370
60
36
1.2
1.1
2.5
1.1
4.2
0.9
1.4
Max.
-
3.0
1
±100
30
34
-
560
90
54
-
-
-
-
6.3
1.4
2.1
Unit
V
V
µA
nA
mΩ
mΩ
S
pF
V
DD
=15V, I
D
=5.8A
R
G
=10Ω
-
③
④
V
DD
=15V, V
GS
=5V
I
D
=5.8A
-
-
-
ns
③
④
-
-
nC
Source-Drain Diode Ratings and Characteristics
Characteristic
Source current
Source current(Plused)
Forward voltage
Reverse recovery time
Reverse recovery charge
①
④
(Ta=25°C)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=1.5A
I
s
=1.5A
di
S
/dt=100A/us
Min
-
-
-
-
-
Typ
-
-
-
90
0.5
Max
1.5
6.0
1.2
-
-
Unit
A
V
ns
uC
Note ;
①
Repetitive Rating : Pulse width limited by maximum junction temperature
②
L=3.4mH, I
AS
=5.8A, V
DD
=15V, R
G
=25Ω
③
Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%
④
Essentially independent of operating temperature
KSD-T7F002-000
3
SUF2001
P-CH Electrical Characteristics
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
⑧
(Ta=25°C)
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(ON)
g
fs
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Test Condition
I
D
=250µA, V
GS
=0
I
D
=250µA, V
DS
=V
GS
V
DS
=-30V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
V
GS
=-10V, I
D
=-2.7A
V
GS
=-5.0V, I
D
=-2.7A
V
DS
=-5V, I
D
=-5.3A
V
GS
=0V, V
DD
=-10V,
f=1MHz
Min.
-30
-1.0
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
66
77
11
390
97
37
1.2
1.1
2.5
1.1
4.7
1.4
1.7
Max.
-
-3.0
1
±100
72
83
-
590
150
60
-
-
-
-
7.0
2.1
2.5
Unit
V
V
µA
nA
mΩ
mΩ
S
pF
V
DD
=-15V, I
D
=-5.3A
R
G
=10Ω
⑦
⑧
-
-
-
ns
V
DD
=-15V, V
GS
=-5V
I
D
=-5.3A
⑦
⑧
-
-
-
nC
Source-Drain Diode Ratings and Characteristics
Characteristic
Source current
Source current(Plused)
Forward voltage
Reverse recovery time
Reverse recovery charge
⑤
⑧
(Ta=25°C)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=-1.5A
I
s
=-1.5A
di
S
/dt=100A/us
Min
-
-
-
-
-
Typ
-
-
-
90
0.5
Max
-1.5
-6.0
-1.2
-
-
Unit
A
V
ns
uC
Note ;
⑤
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
⑥
L=2.0mH, I
AS
=-5.0A, V
DD
=-15V, R
G
=25Ω
⑦
Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%
⑧
Essentially independent of operating temperature
KSD-T7F002-000
4
SUF2001
N-CH Electrical Characteristic Curves
Fig. 1 I
D
- V
DS
℃
Fig. 2 I
D
- V
GS
-
m
Fig. 3 R
DS(on)
- I
D
℃
Fig. 4 I
S
- V
SD
Fig. 5 Capacitance - V
DS
Fig. 6 V
GS
- Q
G
℃
KSD-T7F002-000
5
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