4 mA, SILICON, CURRENT REGULATOR DIODE, DO-35
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Central Semiconductor |
| 包装说明 | O-LALF-W2 |
| Reach Compliance Code | _compli |
| ECCN代码 | EAR99 |
| Is Samacsys | N |
| 其他特性 | HIGH RELIABILITY |
| 外壳连接 | ISOLATED |
| 配置 | SINGLE |
| 二极管元件材料 | SILICON |
| 二极管类型 | CURRENT REGULATOR DIODE |
| 最小动态阻抗 | 800000 Ω |
| JEDEC-95代码 | DO-35 |
| JESD-30 代码 | O-LALF-W2 |
| JESD-609代码 | e0 |
| 最大限制电压 | 1.5 V |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 最高工作温度 | 200 °C |
| 最低工作温度 | -65 °C |
| 封装主体材料 | GLASS |
| 封装形状 | ROUND |
| 封装形式 | LONG FORM |
| 峰值回流温度(摄氏度) | NOT SPECIFIED |
| 最大功率耗散 | 0.6 W |
| 认证状态 | Not Qualified |
| 标称调节电流 (Ireg) | 1 mA |
| 最大重复峰值反向电压 | 100 V |
| 表面贴装 | NO |
| 技术 | FIELD EFFECT |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | WIRE |
| 端子位置 | AXIAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| Base Number Matches | 1 |

| CMCL1301 | CMCL1300 | CMCL1302 | CMCL1304 | CMCL1303 | |
|---|---|---|---|---|---|
| 描述 | 4 mA, SILICON, CURRENT REGULATOR DIODE, DO-35 | 4 mA, SILICON, CURRENT REGULATOR DIODE, DO-35 | 4 mA, SILICON, CURRENT REGULATOR DIODE, DO-35 | 4 mA, SILICON, CURRENT REGULATOR DIODE, DO-35 | 4 mA, SILICON, CURRENT REGULATOR DIODE, DO-35 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | _compli | _compli | _compli | _compli | _compli |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| 外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 二极管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 二极管类型 | CURRENT REGULATOR DIODE | CURRENT REGULATOR DIODE | CURRENT REGULATOR DIODE | CURRENT REGULATOR DIODE | CURRENT REGULATOR DIODE |
| 最小动态阻抗 | 800000 Ω | 4000000 Ω | 400000 Ω | 250000 Ω | 300000 Ω |
| JEDEC-95代码 | DO-35 | DO-35 | DO-35 | DO-35 | DO-35 |
| JESD-30 代码 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 |
| 最大限制电压 | 1.5 V | 1 V | 2 V | 2.5 V | 2 V |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 2 | 2 | 2 | 2 |
| 最高工作温度 | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C |
| 最低工作温度 | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C |
| 封装主体材料 | GLASS | GLASS | GLASS | GLASS | GLASS |
| 封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND |
| 封装形式 | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
| 峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 最大功率耗散 | 0.6 W | 0.6 W | 0.6 W | 0.6 W | 0.6 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 标称调节电流 (Ireg) | 1 mA | 0.5 mA | 2 mA | 4 mA | 3 mA |
| 最大重复峰值反向电压 | 100 V | 100 V | 100 V | 100 V | 100 V |
| 表面贴装 | NO | NO | NO | NO | NO |
| 技术 | FIELD EFFECT | FIELD EFFECT | FIELD EFFECT | FIELD EFFECT | FIELD EFFECT |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | WIRE | WIRE | WIRE | WIRE | WIRE |
| 端子位置 | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 厂商名称 | Central Semiconductor | - | Central Semiconductor | Central Semiconductor | Central Semiconductor |
| 包装说明 | O-LALF-W2 | O-LALF-W2 | - | O-LALF-W2 | - |
| Base Number Matches | 1 | 1 | - | 1 | 1 |
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