Semiconductor
SBT5551
NPN Silicon Transistor
Descriptions
•
General purpose amplifier
•
High voltage application
Features
•
high collector breakdown voltage : V
CBO
= 180V, V
CEO
= 160V
•
Low collector saturation voltage : V
CE(sat)
=0.5V(MAX.)
•
Complementary pair with SBT5401
Ordering Information
Type NO.
SBT5551
Marking
FNF
Package Code
SOT-23
Outline Dimensions
unit :
mm
2.4±0.1
1.30±0.1
1
1.90 Typ.
3
2
0.4 Typ.
0.45~0.60
0.2 Min.
1.12 Max.
2.9±0.1
KST-2012-000
0.124
PIN Connections
1. Base
2. Emitter
3. Collector
0.38
0~0.1
-0.03
+0.05
1
SBT5551
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
180
160
6
600
200
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Collector-Emitter saturation voltage
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE (1)
h
FE (2)
h
FE (3)
V
CE(sat)(1)
*
V
CE(sat)(2)
*
V
BE(sat)(1)
*
V
BE(sat)(2)
*
f
T
C
ob
Test Condition
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=120V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CE
=10V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
Min. Typ. Max.
180
160
6
-
-
80
80
30
-
-
-
-
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.5
1
1
400
6
250
-
-
-
100
100
Unit
V
V
V
nA
nA
-
-
-
V
V
V
V
MHz
pF
*
: Pulse Tester : Pulse Width
≤300µs,
Duty Cycle
≤2.0%
KST-2012-000
2
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