Semiconductor
SBT3904
NPN Silicon Transistor
Descriptions
•
General small signal application
•
Switching application
Features
•
Low collector saturation voltage
•
Collector output capacitance
•
Complementary pair with SBT3906
Ordering Information
Type NO.
SBT3904
Marking
1A
Package Code
SOT-23
Outline Dimensions
2.4±0.1
1.30±0.1
unit :
mm
1
1.90 Typ.
3
2
0.4 Typ.
0.45~0.60
0.2 Min.
2.9±0.1
1.12 Max.
KST-2022-000
0.124
PIN Connections
1. Base
2. Emitter
3. Collector
0.38
0~0.1
-0.03
+0.05
1
SBT3904
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature range
Ta=25°
C
°
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C*
T
j
T
stg
Ratings
60
40
6
200
350
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
* : Package mounted on 99.5% alumina 10×8×0.6mm
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Delay time
Rise time
Storage time
Fall Time
Ta=25°C
°
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
V
CE(sat)
f
T
C
ob
t
d
t
r
t
s
t
f
Test Condition
I
C
=10µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CE
=30V, V
EB
=3V
V
CE
=1V, I
C
=10mA
I
C
=50mA, I
B
=5mA
V
CE
=20V, I
C
=10mA,
f=100MHz
V
CB
=5V, I
E
=0, f=1MHz
V
CC
=3V
dc
, V
BE(off)
=0.5V
dc
.
I
C
=10mA
dc
, I
B1
=1mA
dc
V
CC
=3V
dc
,I
C
=10mA
dc
,
I
B1
=I
B2
=1mA
dc
Min. Typ. Max.
60
40
6
-
100
-
300
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
50
300
0.3
-
4
35
35
200
50
Unit
V
V
V
nA
-
V
MHz
pF
ns
ns
ns
ns
KST-2022-000
2
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