TSM4420
Pin assignment:
1. Source
2. Source
3. Source
4. Gate
5, 6, 7, 8. Drain
Preliminary
N-Channel Enhancement Mode MOSFET
V
DS
= 25V
I
D
= 13.5A
R
DS (on)
, Vgs @ 10V, Ids @ 13.5A = 8.5mΩ
R
DS (on)
, Vgs @ 4.5V, Ids @ 11A = 11mΩ
Features
Advanced trench process technology
High Density Cell Design for Ultra Low
On-Resistance
Fully Characterized Avalanche Voltage and Current
Block Diagram
Ordering Information
Part No.
TSM4420CS
Packing
Package
SOP-8
Tape & Reel
(2,500pcs / Reel)
Absolute Maximum Rating
(T
A
= 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T
A
= 25 C
T
A
= 70 C
o
o
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
T
J
, T
STG
Limit
25
±20
13.5
50
2
1.3
+150
-55 to +150
Unit
V
V
A
W
o
o
C
C
Thermal Performance
Parameter
Junction-to-case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Note: 1. Maximum DC current limited by the package
2
2. 1-in 2oz Cu PCB board
Symbol
R
θjc
R
θja
Limit
2.2
50
Unit
o
C/W
TSM4420
1-3
2005/08 rev. B
Electrical Characteristics
T
J
= 25 C, unless otherwise noted
o
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Conditions
Symbol
Min
Typ
Max
Unit
V
GS
= 0V, I
D
= 250uA
V
GS
= 4.5V, I
D
= 11A
V
GS
= 10V, I
D
= 13.5A
V
DS
= V
GS
, I
D
= 250uA
V
DS
= 24V, V
GS
= 0V
V
GS
= ± 20V, V
DS
= 0V
V
DS
=10V, I
D
= 35A
BV
DSS
R
DS(ON)
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
g
fs
25
--
--
1.0
--
--
--
--
9
7
--
--
--
50
--
11
8.5
3.0
1.0
±100
--
V
mΩ
mΩ
V
uA
nA
S
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
= 15V, R
L
= 15Ω,
I
D
= 1A, V
GEN
= 10V,
R
G
= 24Ω
V
DS
= 15V, I
D
= 13.5A,
V
GS
= 5V
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
--
--
--
--
--
--
--
--
6.6
4.0
15
11
40
12
25
--
--
25
18
60
20
nS
nC
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
I
S
= 20A, V
GS
= 0V
Note: 1. pulse test: pulse width <=300uS, duty cycle <=2%
2. Negligible, Dominated by circuit inductance.
I
S
V
SD
--
--
--
0.75
50
1.1
A
V
TSM4420
2-3
2005/08 rev. B
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