PRELIMINARY DATA SHEET
Battery Protection MicroSURF™
For information only
TS8314 – Bi-directional N-Channel 2.5V Specified MicroSURF™
General Description
Taiwan Semiconductor’s new low cost,
state of the art MicroSURF™ lateral
MOSFET process technology in chipscale
bondwireless packaging minimizes PCB
space and R
DS(ON)
plus provides an ultra-
low Qg X R
DS(ON)
figure of merit.
130 O
D
130 O
Features
• 6.5A, 20V R
DS1(ON) equivalent
= 15mΩ at 4.5 Volts
• 5.5A, 20V R
DS1(ON) equivalent
= 22mΩ at 2.5 Volts
• Low profile package: less than 0.8mm height
when mounted on PCB.
• Occupies less than 1/5 the area of TSSOP-8.
• Excellent thermal characteristics.
• Integrated gate diodes provide ElectroStatic
Discharge (ESD) protection of 4000V Human
Body Model (HBM).
• Lead free solder bumps available.
MicroSURF™ for Battery Protection
Patent Pending
G2
S2
S1
S2
S1
S2
S1
S2
S1
S2
S1
G1
Bottom: Bump Side
Absolute Maximum Ratings
Symbol Parameter
V
S1S2
V
GS
I
S1S2
P
D
T
J
, T
STG
T
A
=25°C unless otherwise noted
Ratings
20
+12 / -0.5
6.5
13
1.3
-55 to +150
Units
V
V
A
W
ºC
Source1-Source2 Voltage
Gate-Source Voltage
Source1-Source2 Current – Continuous
– Pulsed
Power Dissipation (Steady State)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJR
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Balls
1
82
7
°C/W
8/15/03 Rev3
PRELIMINARY DATA SHEET
Electrical Characteristics
TS8314
Electrical Characteristics
T
A
=25°C unless otherwise specified
Symbol
V
(BD)S 1S 2 S
I
S 1S 2 S
I
GS S
I
GS S
V
GS (th )
r
S 1S 2(on )
r
DS 1(o n)
e q uiva le n t
Parameter
Source-to-Source Breakdown Voltage
Zero Gate Voltage Source Current
Gate-Body Leakage
Gate-Body Leakage
Gate Threshold Voltage
Source-to-Source On-State Resistance
Source-to-Source On-State Resistance
Source-to-Source On-State Resistance
Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Source-Drain Reverse Recovery Time
Diode Forward Voltage
Test Condition
V
GS
=0V, I
S
=250µA
V
S 1S 2
=20V, V
GS
=0V, T=150°C
V
GS
=7V, V
S 1S 2
=0V
V
GS
=12V, V
S 1S 2
=0V
V
S 1S 2
=V
GS
, I
S
=250µA
V
GS
=4.5V, I
S
=6.5A
V
GS
=2.5V, I
S
=5.5A
V
GS
=4.5V, I
S
=6.5A
V
GS
=2.5V, I
S
=5.5A
V
S 1S 2
=20V, V
G
=0V, F=1MHZ
V
S 1S 2
=20V, V
G
=0V, F=1MHZ
V
S 1S 2
=20V, V
G
=0V, F=1MHZ
V
GS
=5V, I
S
=8A, V
S 1S 2
=10V
I
S
=1A, V
GS
=0V, di/dt=100A/µs
I
S
=1A, V
GS
=0V
Min
20
Typ
Max
Units
V
50
100
10
0.8
26
38
13
19
1100
400
300
15
40
0.71
1.2
30
44
15
22
µA
nA
mA
V
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
nC
ns
V
C
is s
C
os s
C
rs s
Q
g
t
rr
V
S S
2
8/15/03 Rev3
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
