Semiconductor
THN6701B
SiGe NPN Transistor
SOT-223
Unit in mm
□
Applications
- VHF and UHF power amplifier
6.5
3.0
4
□
Features
- High power gain
G
P
= 14 dB at V
CE
= 6 V, I
C
= 400 mA, f = 465 MHz
- High power
P
OUT
= 35 dBm(3W) at V
CE
= 6 V, I
CQ
= 50 mA, f = 465 MHz
1
2.3
0.7
4.6
3.5
7.0
2
3
Pin Configuration
1. Base
2. Emitter
3. Collector
4. Emitter
□
Absolute Maximum Ratings
(T
A
= 25
℃)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
BV
CBO
BV
CEO
BV
EBO
I
C
P
tot
T
j
T
stg
Ratings
17
12
1.5
1
3
150
-65 ~ 150
Unit
V
V
V
A
W
℃
℃
1
THN6701B
□
Thermal Characteristics
Symbol
R
th j-a
Parameter
Thermal Resistance from Junction to Ambient
Value
40
Unit
K/W
□
Electrical Characteristics
(T
A
= 25
℃)
Parameter
Collector Cut-off Current
Symbol
I
CBO
I
CEO
Emitter Cut-off Current
DC Current Gain
Reverse Transfer Capacitance
Output Power
Power Gain
Power Added Efficiency
I
EBO
h
FE
C
re
P
OUT
G
P
PAE
Test Conditions
V
CB
= 15 V, I
E
= 0 mA
V
CE
= 11 V, I
B
= 0 mA
V
EB
= 1.0 V, I
C
= 0 mA
V
CE
= 6 V, I
C
= 200 mA
V
CB
= 6 V, I
E
= 0 mA, f = 1 MHz
V
CE
= 6 V, I
CQ
= 50 mA, f = 465 MHz,
P
IN
= 25 dBm
Min.
-
-
-
20
-
-
-
-
Typ.
-
-
-
-
4.5
35
10
60
Max.
1.0
5.0
1.0
200
-
-
-
-
pF
dBm
dB
%
Unit
㎂
㎂
㎂
□
h
FE
Classification
Marking
h
FE
Value
R6701
20 - 100
R6701
·
80 - 200
2
THN6701B
□
Typical Characteristics ( T
A
= 25
℃
, unless otherwise specified)
Total Power Dissipation vs.
Ambient Temperature
Reverse Transfer Capacitance, C
re
(pF)
4.0
Reverse Transfer Capacitance
vs. Collector to Base Voltage
10
9
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
f = 1 MHz
Total Power Dissipation, P
tot
(W)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
o
150
Ambient Temperature, T
A
( C)
Collector to Base Voltage, V
CB
(V)
DC Current Gain
vs. Collector Current
100
V
CE
= 6 V
Collector Current
vs. Collector to Emitter Voltage
0.5
I
B
= 10 mA
Collector Current, I
C
(A)
DC Current Gain, h
FE
80
0.4
60
0.3
I
B
= 7.5 mA
40
0.2
I
B
= 5 mA
20
0.1
I
B
= 2.5 mA
0
-2
10
10
-1
10
0
0.0
0
2
4
6
8
10
Collector Current, I
C
(A)
Collector to Emitter Voltage, V
CE
(V)
3
THN6701B
□
Application Information
RF performance at T
S
≤
60
℃
in common emitter configuration
Operation Mode
CW, class-AB
f (MHz)
465
V
CE
(V)
6
P
OUT
(dBm)
35
G
P
(dB)
≥
10
PAE (%)
60
Output Power or Power Gain
vs. Input Power
45
f = 465 MHz, V
CC
= 6 V, I
CQ
= 50 mA
Collector Current or Power Added Efficiency
vs. Input Power
20
18
Power Gain, G
P
(dB)
1.6
1.4
Collector Current, I
C
(A)
1.2
PAE
f = 465 MHz, V
CC
= 6 V, I
CQ
= 50 mA
80
70
60
50
40
I
C
40
Output Power, P
OUT
(dBm)
P
OUT
35
G
P
16
14
12
10
8
0
5
10
15
20
25
6
30
1.0
0.8
0.6
0.4
0.2
0.0
0
5
10
15
20
25
30
25
20
15
10
30
20
10
0
30
Input Power, P
IN
(dBm)
Input Power, P
IN
(dBm)
Power Added Efficiency, PAE (%)
4
THN6701B
□
Evaluation Board (for FRS at 465 MHz)
Part
C8
C5
C4
L1
C1
C2 C3
C7
L2
C6
Value
100 pF (1608, Murata)
10 pF (1608, Murata)
18 pF (1608, Murata)
1 nF (1608, Murata)
15pF (1608, Murata)
100 nH (1608, Murata)
0.4 X 1.5 X 6T
(Air Coil)
C1, C4
C7, C9
C2
C3
C9
C5,C8
C6
L1
L2
FR4 glass epoxy: dielectric constant = 4.5, thickness = 0.8 mm
Evaluation board dimension = 119
ⅹ
50 mm
2
Test condition: CW test, V
CC
= 6.0 V, I
CQ
= 50 mA, f = 465 MHz
□
Test Circuit Schematic Diagram
V
BB
100 pF
1 nF
V
CC
1 nF
100 pF
100 nH
L2
0.5 X 1.5 X 6T
W=1.3 mm
L=10 mm
W=1.3 mm
100 pF
L=42 mm
OUTPUT
INPUT
100 pF
W=1.3 mm
L=36 mm
W=1.3 mm
L=5 mm
W=1.3 mm
L=2 mm
15 pF
10 pF
18 pF
5
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