Semiconductor
THN6501 Series
SiGe NPN Transistor
SOT-523
Unit in mm
□
Application
LNA and wide band amplifier up to GHz range
□
Features
o Low Noise Figure
NF = 1.0 dB at f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
o High Power Gain
MAG = 15 dB at f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
o High Transition Frequency
f
T
= 9 GHz at V
CE
= 3 V, I
C
= 30 mA
Pin Configuration
Pin No
1
2
3
Symbol
B
E
C
Description
Base
Emitter
Collector
Unit : mm
Dimension
2.9ⅹ1.3, 1.2t
2.0ⅹ1.25, 1.0t
2.0ⅹ1.25, 1.0t
1.6ⅹ0.8, 0.8t
□
h
FE
Classification
Marking
h
FE
AB1
AB2
125 to 300 80 to 160
□
Available Package
Product
THN6501S
THN6501U
THN6501Z
THN6501E
Package
SOT-23
SOT-323
SOT-343
SOT-523
□
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
Ic
P
T
T
STG
T
J
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Ratings
20
12
2.5
100
150
-65 ~ 150
150
Unit
V
V
V
mA
mW
℃
℃
Caution : Electro Static Senetive Device
1
THN6501 Series
□
Electrical Characteristics
( T
A
= 25
℃
)
Value
Symbol
I
CBO
Collector Cut-off Current
I
CEO
I
EBO
h
FE
f
T
C
CB
|S
21
|
2
Parameter
Test Condition
V
CB
= 19 V, I
E
= 0 mA
V
CE
= 12 V, I
B
= 0 mA
Min.
Typ.
Max.
0.5
5
0.5
Unit
uA
uA
uA
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Collector to Base Capacitance
Insertion Power Gain
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 15 mA
V
CE
= 3 V, I
C
= 30 mA
V
CB
= 10 V, f = 1 MHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 15 mA, f = 1 GHz
8
9
12.5
13
80
8
150
9
0.85
9.5
300
GHz
pF
dB
11
14.5
dB
15
1.0
0.049
dB
Ω
dB
MAG
Maximum Available Gain
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 15 mA, f = 1 GHz
NFmin Minimum Noise Figure
rn
G
A
OIP
3
Noise Resistance
Associated Gain
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 15 mA, f = 1 GHz
10
10
12
12.5
27
dBm
Output 3rd Order Intercept
V
CE
= 6 V, I
C
= 15 mA, f = 1 GHz
2
THN6501 Series
Total Power Dissipation, P
T
vs. T
A
I
C
vs. V
CE
250
80
70
200
60
I
B
= 500
㎂
I
B
= 400
㎂
I
B
= 300
㎂
P
T
[mW]
I
C
[mA]
150
50
40
30
20
100
I
B
= 200
㎂
I
B
= 100
㎂
0
2
4
6
8
10
50
10
0
0
25
50
75
100
125
150
0
Ambient Temperature, T
A
[℃]
V
CE
[V]
I
C
vs. V
BE
120
300
h
FE
vs. I
C
V
CE
= 6 V
100
250
V
CE
= 3 V
80
200
I
C
[mA]
60
h
FE
0
0.2
0.4
0.6
0.8
1
150
40
100
20
50
0
0
0.1
1
10
100
V
BE
[V]
I
C
[mA]
3
THN6501 Series
Maximum Available Gain, MAG vs. Frequency
Insertion Power Gain, |S
21
|
2
vs. Frequency
24
20
T R 1 0 E s t5 3 8 1 m _ 2 8 6 a G in
A F 5 4 _ o 2 _ v 5 A 0 0 1 ..M x a 1
MAG
G in1
M x
[dB]
a a
d (T R 1 0 E s t5 3
2
8 1 m _ 2 8 6 (2 ))
B A F 5 4 _ o 2 _ v 5 A 0 0 1 ..S ,1
|S
21
B
[dB]
|
(2 ))
d (S ,1
22
20
18
16
14
12
10
8
6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
18
16
14
12
10
8
6
4
2
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
CE
= 6 V
I
C
= 15 mA
V
CE
= 6 V
I
C
= 15 mA
V
CE
= 3 V
I
C
= 15 mA
V
CE
= 3 V
I
C
= 15 mA
freq, GHz
freq, GHz
Frequency [GHz]
Frequency [GHz]
Transition Frequency, f
T
vs. I
C
12
Maximum Available Gain, MAG vs. I
C
18
V
CE
= 6 V
10
f = 1 GHz
17
V
CE
= 8 V
V
CE
= 6 V
V
CE
= 3 V
8
16
6
MAG [dB]
f
T
[GHz]
V
CE
= 3 V
15
4
14
2
V
CE
= 2 V
0
10
20
30
40
50
60
70
13
V
CE
= 2 V
0
12
0
5 10 15 20 25 30 35 40 45 50 55 60 65
I
C
[mA]
I
C
[mA]
4
THN6501 Series
Output 3rd Order Intercept Point, OIP
3
vs. I
C
(Z
S
= Z
L
= 50
Ω)
35
1.6
C
CB
vs. V
CB
f = 1 GHz
30
V
CE
= 6 V
f = 1 MHz
1.2
25
OIP
3
[dBm]
V
CE
= 3 V
20
C
CB
[pF]
V
CE
= 2 V
0.8
15
10
0.4
5
0
0
5
10
15
20
25
30
35
0
0
5
10
15
20
I
C
[mA]
V
CB
[V]
NF vs. I
C
V
CE
= 3 V, I
C
= parameter, Z
S
= Z
Sopt
2
Noise Figure Contours & Constant Gain
f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
f = 1 GHz
1.8
1.6
Input Stable
Output
NF [dB]
1.4
1.2
1
0.8
0.6
0
5
10 15 20 25 30 35 40 45 50 55
Γ
OPT
=0.445∠155
NF=1.0dB
=1.1dB
=1.2dB
=1.3dB
4 contour
G
A
=15dB
=14dB
=13dB
=12dB
=11dB
5 contour
I
C
[mA]
5
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