THN6501F
Semiconductor
SiGe NPN Transistor
□
Application
LNA and wide band amplifier up to GHz range
SOT-89
Unit in mm
□
Features
o Low Noise Figure
NF = 1.0 dB at f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
o High Gain
MAG = 11.5 dB at f = 1 GHz, V
CE
= 10 V, I
C
= 20 mA
o High Transition Frequency
f
T
= 7 GHz at f = 1 GHz, V
CE
= 10 V, I
C
= 30 mA
4
□
h
FE
Classification
Marking
h
FE
AB1
125 to 300
AB2
80 to 160
Pin Configuration
Pin No
1
2, 4
3
Symbol
B
C
E
Description
Base
Collector
Emitter
□
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
STG
T
J
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Ratings
25
12
2.5
100
400
-65 ~ 150
150
Unit
V
V
V
mA
mW
℃
℃
1
THN6501F
□
Electrical Characteristics
( T
A
= 25
℃
)
Symbol
Parameter
Test Condition
Min.
I
CBO
Collector Cut-off Current
I
CEO
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain
Transition Frequency
V
CE
= 12uA, I
B
= 0 mA
V
EB
= 1V, I
C
= 0 mA
V
CE
= 3V, Ic = 7mA
V
CE
= 10V, Ic = 20mA
80
-
6.7
1.02
5
0.5
300
GHz
pF
uA
uA
V
CB
= 10V, I
E
= 0 mA
Value
Typ.
Max.
0.5
uA
Unit
f
T
C
CB
Collector to Base Capacitance V
CB
= 10V, f = 1MHz
□
Performance Characteristics
Symbol
Parameter
Test Condition
Min.
|S
21|2
V
CE
= 3 V, I
C
= 20 mA, f = 1 GHz
Value
Typ.
9.5
Max.
Unit
Insertion Power Gain
V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 1 GHz
Maximum Available Gain
V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
dB
9.8
11.0
dB
11.5
1.0
0.056
dB
Ω
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
MAG
NFmin
rn
Minimum Noise Figure
Noise Resistance
2
THN6501F
Total Power Dissipation P
T
vs. T
A
I
C
vs. V
CE
500
80
70
I
B
=500uA
I
B
=400uA
400
60
50
P
T
[mW]
I
C
[mA]
300
I
B
=300uA
40
I
B
=200uA
30
20
I
B
=100uA
200
100
10
0
0
50
100
150
0
Ambient Temperature, T
A
[℃]
0
2
4
6
8
10
V
CE
[V]
I
C
vs. V
BE
h
FE
vs. I
C
120
300
V
CE
= 6 V
100
250
V
CE
= 3 V
80
200
I
C
[mA]
60
h
FE
150
40
100
20
50
0
0
0.2
0.4
0.6
0.8
1
0
0.1
1
10
100
V
BE
[V]
I
C
[mA]
3
THN6501F
Maximum Available Gain, MAG vs. Frequency Insertion Power Gain, |S
21
|
2
vs. Frequency
25
25
20
20
MAG [dB]
15
V
CE
= 10 V
I
C
= 20 mA
|S
21
| [dB]
15
10
10
V
CE
= 10 V
I
C
= 20 mA
5
V
CE
= 3 V
I
C
= 20 mA
2
5
V
CE
= 3 V
I
C
= 20 mA
0
0
0.5
1
1.5
2
2.5
3
0
0
0.5
1
1.5
2
2.5
3
Frequency [GHz]
Frequency [GHz]
Transition Frequency : f
T
vs. I
C
8
Maximum Available Gain, MAG vs. I
C
13
f = 1 GHz
7
V
CE
= 10 V
12
f = 1 GHz
V
CE
= 6 V
V
CE
= 10 V
V
CE
= 6 V
MAG [dB]
f
T
[GHz]
6
11
V
CE
= 3 V
V
CE
= 2 V
5
V
CE
= 3 V
10
V
CE
= 2 V
4
9
3
0
20
40
60
80
8
0
20
40
60
80
I
C
[mA]
I
C
[mA]
4
THN6501F
Insertion Power Gain, |S
21
|
2
vs. I
C
C
CB
vs. V
CB
11
1.4
f = 1 GHz
10
V
CE
= 10 V
1.3
f = 1MHz
V
CE
= 6 V
1.2
|S
21
| [dB]
V
CE
= 3 V
8
C
CB
[pF]
9
2
1.1
V
CE
= 2 V
1
7
0.9
6
0
20
40
60
80
0.8
0
5
10
15
20
25
30
I
C
[mA]
V
CB
[V]
NF vs. I
C
V
CE
= 3 V, I
C
= parameter, Z
S
= Z
Sopt
2
Noise Figure Contours & Constant Gain
f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
Output Stable
f = 1 GHz
1.8
Input Stable
1.6
NF [dB]
1.4
1.2
1
0.8
0.6
0
5
10 15 20 25 30 35 40 45 50 55
G
A
= 12 dB
= 11 dB
= 10 dB
= 9 dB
= 8 dB
5 contour
Γ
OPT
=0.365∠166
NF = 1.0 dB
= 1.1 dB
= 1.2 dB
= 1.3 dB
4 contour
I
C
[mA]
5
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