Semiconductor
THN6301 Series
SiGe NPN Transistor
SOT-523
Unit in mm
□
Application
LNA and wide band amplifier up to GHz range
□
Features
o Low Noise Figure
NF = 1.1 dB at f = 1 GHz, V
CE
= 8 V, I
C
= 5 mA
o High Power Gain
MAG =18 dB at f = 1 GHz, V
CE
= 8 V, I
C
=15 mA
o High Transition Frequency
f
T
= 10 GHz at V
CE
= 8 V, I
C
= 15 mA
Pin Configuration
Pin No
1
2
3
Symbol
B
E
C
Description
Base
Emitter
Collector
Unit : mm
Dimension
2.9ⅹ1.3, 1.2t
2.0ⅹ1.25, 1.0t
2.0ⅹ1.25, 1.0t
1.6ⅹ0.8, 0.8t
1.4ⅹ0.8, 0.6t
Unit
V
V
V
mA
mW
℃
℃
□
Available Package
Product
Package
SOT-23
SOT-323
SOT-343
SOT-523
SOT-623F
□
h
FE
Classification
Marking
h
FE
AA1
AA2
125 to 300 80 to 160
THN6301S
THN6301U
THN6301Z
THN6301E
THN6301KF
Ratings
25
12
2.5
65
150
-65 ~ 150
150
□
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
Ic
P
T
T
STG
T
J
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Caution : ESD sensitive device
1
THN6301 Series
□
Electrical Characteristics
( T
A
= 25
℃
)
Value
Symbol
I
CBO
Collector Cut-off Current
I
CEO
I
EBO
h
FE
f
T
C
CB
|S
21
|
2
Parameter
Test Condition
V
CB
= 19 V, I
E
= 0 mA
V
CE
= 12 V, I
B
= 0 mA
Min.
-
-
-
80
-
-
10
12
15
16
-
-
-
-
-
Typ.
-
-
-
150
10
0.55
12.5
14.5
16.5
18
1.1
0.09
14.5
15.5
27
Max.
0.5
5
0.5
300
-
-
-
Unit
uA
uA
uA
Emitter Cut-off Current
DC Current Gain
Transition Frequency
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 8 V, I
C
= 15 mA
V
CE
= 8 V, I
C
= 15 mA
GHz
pF
dB
Collector to Base Capacitance V
CB
= 10 V, f = 1 MHz
Insertion Power Gain
V
CE
= 8 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 8 V, I
C
= 15 mA, f = 1 GHz
Maximum Available Gain
Minimum Noise Figure
Noise Resistance
Associated Gain
Output 3rd Order Intercept
V
CE
= 8 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 8 V, I
C
= 15 mA, f = 1 GHz
-
-
dB
-
-
-
-
dB
-
-
dBm
dB
Ω
MAG
NFmin
rn
G
A
OIP
3
V
CE
= 8 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 8 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 8 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 8 V, I
C
= 15 mA, f = 1 GHz
V
CE
= 8 V, I
C
= 15 mA, f = 1 GHz
2
THN6301 Series
Total Power Dissipation, P
T
vs. T
A
I
C
vs. V
CE
250
50
200
40
I
B
= 200 uA
P
T
[mW]
I
C
[mA]
150
30
I
B
= 150 uA
100
20
I
B
= 100 uA
I
B
= 50 uA
50
10
0
0
25
50
75
100
125
150
0
0
1
2
3
4
5
6
7
8
9
10
Ambient Temperature, T
A
[℃]
V
CE
[V]
I
C
vs. V
BE
h
FE
vs. I
C
20
300
V
CE
= 8 V
15
250
200
V
CE
= 8 V
I
I
C
[mA]
[mA]
C
h
FE
0.2
0.4
0.6
0.8
1.0
10
150
100
5
50
0
0.0
0
0.1
1
10
100
V
[V]
V
BE
BE
[V]
I
C
[mA]
3
THN6301 Series
Maximum Available Gain, MAG vs. Frequency
Insertion Power Gain, |S
21
|
2
vs. Frequency
26
24
d (T R 1 0 E s t5 3 8 1 m _ 2 8 6 (2 ))
B A F 5 3 _ o 2 _ v 5 A 0 0 1 ..S ,1
2
(S
|S
dB (2,1))
21
| [dB]
T R 1 0 E s t5 3 8 1 m _ 2 8 6 a G in
A F 5 3 _ o 2 _ v 5 A 0 0 1 ..M x a 1
Mx a 1
G in
MAG
a
[dB]
24
22
20
18
16
14
12
10
8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
22
20
18
16
14
12
10
8
6
4
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
CE
= 8 V
I
C
= 15 mA
V
CE
= 3 V
I
C
= 15 mA
V
CE
= 8 V
I
C
= 15 mA
V
CE
= 3 V
I
C
= 15 mA
freq, GHz
Frequency [GHz]
freq, GHz
Frequency [GHz]
Transition Frequency, f
T
vs. I
C
14
Maximum Available Gain, MAG vs. I
C
20
19
18
V
CE
= 8 V
f = 1 GHz
V
CE
= 8 V
12
10
V
CE
= 3 V
17
V
CE
= 3 V
MAG [dB]
f
T
[GHz]
8
16
15
14
13
12
6
4
2
V
CE
= 2
V
CE
= 2 V
0
5
10
15
20
25
30
35
40
45
11
10
0
5
10
15
20
25
30
35
40
45
0
I
C
[mA]
I
C
[mA]
4
THN6301 Series
Output 3rd Order Intercept Point, OIP
3
vs. I
C
(Z
S
= Z
L
= 50
Ω)
35
1
C
CB
vs. V
CB
f = 1 GHz
30
25
V
CE
= 8 V
0.9
0.8
f=1
OIP
3
[dBm]
C
CB
[pF]
V
CE
= 6 V
20
15
10
5
0
0
5
10
15
20
25
30
35
0.7
0.6
0.5
0.4
0.3
0
5
10
15
20
V
CE
= 3 V
I
C
[mA]
NF vs. I
C
V
CE
= 8 V, I
C
= parameter, Z
S
= Z
Sopt
V
CB
[V]
Noise Figure Contours & Constant Gain
f = 1 GHz, V
CE
= 8 V, I
C
= 5 mA
f = 1 GHz
2.6
Output Stable
NF [dB]
2.1
Input Stable
1.6
1.1
G
A
=17dB
=16dB
=15dB
=14dB
=13dB
5 contour
Γ
OPT
=0.322∠104
NF =1.0dB
=1.1dB
=1.2dB
=1.3dB
4 contour
0.6
0
5
10
15
20
25
I
C
[mA]
5
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