Semiconductor
THN450Z
SiGe NPN Transistor
SOT-343
Unit in mm
□
Applications
- Low noise amplifier, oscillator and buffer amplifier up to 3 GHz
□
Features
- High gain bandwidth product
f
T
= 16 GHz @ V
CE
= 2 V, I
C
= 50 mA
f
T
= 18 GHz @ V
CE
= 3 V, I
C
= 70 mA
- High power gain
|S
21
|
2
= 12 dB @ V
CE
= 2 V, I
C
= 50 mA, f = 1.8 GHz
MAG = 14 dB @ V
CE
= 2 V, I
C
= 50 mA, f = 1.8 GHz
- Low noise figure
NF = 1.5 dB @ V
CE
= 2 V, I
C
= 7 mA, f = 1.8 GHz
1
3
2
4
Pin Configuration
1. Base
2. Emitter
3. Emitter
4. Collector
□
Absolute Maximum Ratings
( T
A
= 25
℃
)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
Symbol
BV
CBO
BV
CEO
BV
EBO
I
C
P
tot
T
j
T
stg
Ratings
10
4.5
1.5
100
450
150
-65 ~ 150
Unit
V
V
V
mA
mW
℃
℃
Caution
:
Electro Static Discharge
sensitive device
1
THN450Z
□
Electrical Characteristics
( T
A
= 25
℃
)
Parameter
Collector Cut-off Current
Symbol
I
CBO
I
CEO
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
I
EBO
h
FE
f
T
Test Conditions
V
CB
= 7 V, I
E
= 0 mA
V
CE
= 2 V, I
B
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 5 mA
V
CE
= 2 V, I
C
= 50 mA
V
CE
= 3 V, I
C
= 70 mA
Maximum Available Gain
MAG
V
CE
= 2 V, I
C
= 50 mA, f = 0.9 GHz
V
CE
= 2 V, I
C
= 50 mA, f = 1.8 GHz
Insertion Power Gain
|S
21
|
2
V
CE
= 2 V, I
C
= 50 mA, f = 0.9 GHz
V
CE
= 2 V, I
C
= 50 mA, f = 1.8 GHz
Noise Figure
Reverse Transfer Capacitance
NF
C
re
V
CE
= 2 V, I
C
= 7 mA, f = 1.8 GHz
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
Min.
-
-
-
50
14
16
20
12
16
10
-
-
Typ.
-
-
-
-
16
18
22
14
18
12
1.5
0.35
Max.
1.0
1.0
0.5
260
-
-
-
-
-
-
2.0
-
GHz
GHz
dB
dB
dB
dB
dB
pF
Unit
㎂
㎂
㎂
□
h
FE
Classification
Marking
h
FE
Value
BG1
50 - 150
BG2
130 - 260
2
THN450Z
□
Typical Characteristics
( T
A
= 25
℃,
unless otherwise specified )
Total Power Dissipation
vs. Ambient Temperature
Reverse Transfer Capacitance, C
re
(pF)
600
0.8
f = 1 MHz
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
1
2
3
4
Reverse Transfer Capacitance
vs. Collector to Base Voltage
Total Power Dissipation, P
tot
(mW)
500
400
300
200
100
0
0
25
50
75
100
125
o
150
Ambient Temperature, T
A
( C)
Collector to Base Voltage, V
CB
(V)
DC Current Gain
vs. Collector Current
400
V
CE
= 3 V
50
45
Collector Current
vs. Base to Emitter Voltage
V
CE
= 3 V
Collector Current, I
C
(mA)
1
10
100
40
35
30
25
20
15
10
5
DC Current Gain, h
FE
100
50
10
0.1
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector Current, I
C
(mA)
Base to Emitter Voltage, V
BE
(V)
3
THN450Z
Collector Current
vs. Collector to Emitter Voltage
90
80
24
Gain Bandwidth Product
vs. Collector Current
Gain Bandwidth Product, f
T
(GHz)
22
20
18
16
14
12
10
8
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100 110
V
CE
= 2 V
V
CE
= 3 V
Collector Current, I
C
(mA)
70
60
50
40
30
20
10
0
0
1
2
I
I
B
B
= 800 uA
= 800 ㎂
I
I
B
= 600 uA
= 600 ㎂
B
I
B
400 ㎂
I
B
= 400 uA
I
I
B
= 200 uA
= 200 ㎂
B
3
4
Collector to Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
Maximum Available Gain
vs. Collector Current
30
Insertion Power Gain
vs. Collector Current
25
Maximum Available Gain, MAG (dB)
Insertion Power Gain, |S
21
| (dB)
25
f = 0.9 GHz
20
2
V
CE
= 3 V
V
CE
= 2 V
V
CE
= 3 V
20
f = 0.9 GHz
V
CE
= 3 V
V
CE
= 2 V
15
V
CE
= 3 V
V
CE
= 2 V
f = 1.8 GHz
15
f = 1.8 GHz
10
5
0
1
10
100
V
CE
= 2 V
10
5
0
1
10
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
4
THN450Z
Power Gain
vs. Frequency
40
35
30
V
CE
= 2 V
I
C
= 50 mA
MSG
40
35
30
V
CE
= 3 V
I
C
= 70 mA
MSG
Gain (dB)
20
15
10
5
0
0.0
|S
21
|
2
Gain (dB)
25
25
20
15
10
5
0
0.0
MAG
MAG
|S
21
|
2
0.5
1.0
1.5
2.0
2.5
3.0
0.5
1.0
1.5
2.0
2.5
3.0
Frequency (GHz)
Frequency (GHz)
Noise Figure
vs. Collector Current
at V
CE
= 2 V, I
C
=parameters, Z
S
= Z
Sopt
4.0
3.5
Noise Figure, NF (dB)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
10
20
30
40
50
60
70
f = 1.8 GHz
f = 0.9 GHz
Collector Current, I
C
(mA)
5
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