THN4301 Series
Semiconductor
SiGe NPN Transistor
□
Application
LNA and wide band amplifier up to GHz range
SOT-523
Unit in mm
□
Features
o Low Noise Figure
NF = 1.5dB at f = 2 GHz, V
CE
= 3 V, I
C
= 5 mA
NF = 1.7dB at f = 2 GHz, V
CE
= 1 V, I
C
= 3 mA
o High Gain
MAG = 12.3 dB at f = 2 GHz, V
CE
= 3 V, I
C
= 25 mA
MAG = 12.0 dB at f = 2 GHz, V
CE
= 1 V, I
C
= 5 mA
o High Transition Frequency
f
T
= 15 GHz at f = 2 GHz, V
CE
= 3 V, I
C
= 25 mA
Pin Configuration
Pin No
1
2
3
Symbol
B
E
C
Description
Base
Emitter
Collector
Unit : mm
Dimension
2.0ⅹ1.25, 1.0t
2.0ⅹ1.25, 1.0t
1.6ⅹ0.8, 0.8t
□
h
FE
Classification
Marking
h
FE
AH1
AH2
125 to 300 80 to 160
□
Available Package
Product
THN4301U
THN4301Z
THN4301E
Package
SOT-323
SOT-343
SOT-523
□
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
STG
T
J
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Ratings
15
6
2.5
65
150
-65 ~ 150
150
Unit
V
V
V
mA
mW
℃
℃
1
THN4301 Series
□
Electrical Characteristics
( T
A
= 25
℃
)
Symbol
I
CBO
I
CEO
I
EBO
h
FE
f
T
C
CB
|S
21
|
2
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Test Condition
V
CB
= 10 V, I
E
= 0 mA
V
CE
= 6 V, I
B
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 15 mA
V
CE
= 3 V, I
C
= 20 mA
Min.
-
-
-
80
-
-
6.0
5.0
Value
Typ.
-
-
-
200
14
0.63
8.0
7.0
12.2
11.5
1.5
1.7
0.04
0.05
9.5
8.0
Max.
0.5
5.0
0.5
300
-
-
-
Unit
uA
uA
uA
GHz
pF
dB
Collector to Base Capacitance V
CB
= 10 V, f = 1 MHz
Insertion Power Gain
V
CE
= 3 V, I
C
= 15 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
Maximum Available Gain
-
-
dB
-
-
dB
-
-
-
-
dB
-
Ω
MAG
V
CE
= 3 V, I
C
= 15 mA, f = 2 GHz 10.2
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
9.5
-
-
-
-
-
-
NFmin
Minimum Noise Figure
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
rn
Noise Resistance
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
G
A
Associated Gain
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
2
THN4301 Series
Maximun Available Gain, MAG vs. Frequency Insertion Power Gain, |S
21
|
2
vs. Frequency
24
22
20
22
20
18
16
MAG [dB]
|S
21
| [dB]
18
16
14
12
10
8
0
0.5
1
V
CE
= 3 V
I
C
= 15 mA
14
12
10
8
6
4
2
V
CE
= 3 V
I
C
= 15 mA
V
CE
= 1 V
I
C
= 10 mA
2
V
CE
= 1 V
I
C
= 10
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
Frequency [GHz]
Frequency [GHz]
Maximun Available Gain, MAG vs. I
C
20
Maximun Available Gain, MAG vs. I
C
13
f = 1 GHz
19
V
CE
= 3 V
f = 2 GHz
V
CE
= 3 V
18
V
CE
= 2 V
12
MAG [dB]
17
V
CE
= 1 V
MAG [dB]
V
CE
= 2 V
16
V
CE
= 1 V
11
15
14
13
0
10
20
30
40
50
60
70
10
0
10
20
30
40
50
60
70
I
C
[mA]
I
C
[mA]
4
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