Bulletin PD-20178 rev. C 07/03
18TQ...
18TQ...S
SCHOTTKY RECTIFIER
18 Amp
I
F(AV)
= 18Amp
V
R
= 35 to 45V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
range
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 18 Apk, T
J
= 125°C
range
Description/Features
Units
A
V
A
V
°C
The 18TQ Schottky rectifier series has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175°C
junction temperature. Typical applications are in switching
power supplies, converters, free-wheeling diodes, and re-
verse battery protection.
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
175° C T
J
operation
18TQ
18
35 to 45
1800
0.53
- 55 to 175
Case Styles
18TQ...
18TQ...
S
Base
Cathode
2
Base
Cathode
2
1
3
1
3
Cathode
Anode
N/C
Anode
TO-220AC
www.irf.com
D
2
PAK
1
18TQ... Series
Bulletin PD-20178 rev. C 07/03
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
35
40
45
V
RWM
Max. Working Peak Reverse Voltage (V)
18TQ035
18TQ040
18TQ045
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
* See Fig. 5
I
FSM
E
AS
I
AR
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 7
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
18TQ
18
1800
390
24
3.6
Units
A
Conditions
50% duty cycle @ T
C
= 149° C, rectangular wave form
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
Following any rated
load condition and
with rated V
RRM
applied
A
mJ
A
T
J
= 25 °C, I
AS
= 3.6 Amps, L = 3.7 mH
Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
* See Fig. 1
(1)
18TQ
0.60
0.72
0.53
0.67
Units
V
V
V
V
mA
mA
pF
nH
V/ µs
@ 18A
@ 36A
@ 18A
@ 36A
T
J
= 25 °C
T
J
= 125 °C
Conditions
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
I
RM
C
T
L
S
Max. Reverse Leakage Current (1)
* See Fig. 2
Max. Junction Capacitance
Typical Series Inductance
2.5
25
1400
8.0
10000
V
R
= 5V
DC
, (test signal range 100Khz to 1Mhz) 25 °C
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
(Rated V
R
)
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
18TQ
-55 to 175
-55 to 175
1.50
0.50
2 (0.07)
Min.
Max.
6 (5)
12 (10)
Units
°C
°C
°C/W
°C/W
DC operation
Conditions
R
thJC
Max. Thermal Resistance Junction
to Case
R
thCS
Typical Thermal Resistance, Case to
Heatsink
wt
T
Approximate Weight
Mounting Torque
* See Fig. 4
Mounting surface , smooth and greased
g (oz.)
Kg-cm
(Ibf-in)
2
www.irf.com
18TQ... Series
Bulletin PD-20178 rev. C
07/03
10
00
10
00
10
0
R v rs C rre t - I ( A
ee e u n
m)
R
1
0
1
.1
.0
1
.0 1
0
.0 0
01
0
T =1 5 C
7°
J
1 0C
5°
1 5C
2°
1 0C
0°
7°
5C
5°
0C
2°
5C
10
0
In ta ta e u F rw rdC rre t - I (A
s n nos o a
u n
)
F
5
1 1 2 2 3 3 4 4
0 5 0 5 0 5 0 5
R v rs V lta e- V (V
ee e o g
R )
1
0
T =1 5C
7°
J
T =1 5C
2°
J
T= 2 °
5C
J
J n tio C p c n e- C (p )
u c n a a ita c
F
T
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
100
00
1
T =2 °
5C
J
10
00
.1
0
.2
.4
.6
.8
1
1
.2
1
.4
1
.6
10
0
0
1
0
2
0
3
0
4
0
5
0
F rw rdV lta eD p- V (V
o a
o g ro
)
F
M
R v rs V lta e- V (V
ee e o g
)
R
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1
0
T e a Im e a c - Zth C(° /W
h rm l p d n e
C )
J
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
1
.1
D=0 0
.5
D=0 3
.3
D=0 5
.2
D=0 7
.1
D=0 8
.0
P
M
D
t
1
t2
N te :
o s
1 D tyfa to D= t1/ t2
. u
c r
2 P a T =P xZ
. ek
+T
J D
M th C C
J
.0
1
.1
1
1
0
10
0
.0
1
S g P ls
in le u e
(T e a R s ta c )
h rm l e is n e
.0 1
0
.0 0 1
00
.0 0
01
.0 1
0
t , R c n u r P ls D ra n(S c n s
e ta g la u e u tio
eod)
1
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
www.irf.com
3
18TQ... Series
Bulletin PD-20178 rev. C 07/03
10
8
A w b C s T m e a re- (° )
llo a le a e e p r tu
C
15
7
10
7
15
6
10
6
15
5
10
5
0
D
C
1T
8Q
R J (D ) =1 0 C
.5 ° /W
th C C
1
5
D=0 8
.0
D=0 7
.1
D=0 5
.2
D=0 3
.3
.5
1 D=0 0
0
R SL it
M im
5
D
C
A e g P w r L s - (W tts
v ra e o e o s
a )
4
8
1
2
1
6
2
0
2
4
(A
)
2
8
0
0
4
8
1
2
1
6
2
0
2
4
(A
)
2
8
A e g F rw rdC rre t - I
v ra e o a
u n
F V
(A )
A e g F rw rdC rre t - I
v ra e o a
u n
F V
(A )
Fig. 5 - Maximum Allowable Case Temperature
Vs. Average Forward Current
10000
(A)
At Any Rated Load Condition
And With Rated V
RRM
Applied
Following Surge
FSM
Fig. 6 - Forward Power Loss Characteristics
Non-Repetitive Surge Current - I
1000
100
10
100
1000
10000
Square Wave Pulse Duration - t
p
(microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
HIGH-S
PEED
S CH
WIT
F
REE-WHEEL
DIODE
40HF 40S
L 02
+
DUT
IR P460
F
R = 25 ohm
g
Vd = 25 Volt
CURRENT
MONIT
OR
Fig. 8 - Unclamped Inductive Test Circuit
4
www.irf.com
18TQ... Series
Bulletin PD-20178 rev. C
07/03
Outline Table
10.54 (0.41)
MAX.
3.78 (0.15)
3.54 (0.14)
15.24 (0.60)
14.84 (0.58)
1
14.09 (0.55)
13.47 (0.53)
3
3.96 (0.16)
3.55 (0.14)
2.04 (0.080) MAX.
1.40 (0.05)
1.15 (0.04)
0.94 (0.04)
0.69 (0.03)
1
3
1.32 (0.05)
DIA.
6.48 (0.25)
6.23 (0.24)
2°
1.22 (0.05)
2.92 (0.11)
2.54 (0.10)
TERM 2
0.10 (0.004)
Base
Cathode
2.89 (0.11)
2.64 (0.10)
1
4.57 (0.18)
4.32 (0.17)
3
0.61 (0.02) MAX.
Cathode
Anode
5.08 (0.20) REF.
Conform to JEDEC outline TO-220AC
Dimensions in millimeters and (inches)
10.16 (0.40)
REF.
4.69 (0.18)
4.20 (0.16)
1.32 (0.05)
6.47 (0.25)
15.49 (0.61)
1.22 (0.05)
93°
6.18 (0.24)
14.73 (0.58)
2.61 (0.10)
2.32 (0.09)
8.89 (0.35)
5.28 (0.21)
4.78 (0.19)
0.55 (0.02)
0.46 (0.02)
3X
1.40 (0.055)
REF.
0.93 (0.37)
0.69 (0.27)
1.14 (0.045)
2X
Base
Cathode
2
MINIMUM RECOMMENDED FOOTPRINT
11.43 (0.45)
1
3
4.57 (0.18)
4.32 (0.17)
2
0.61 (0.02) MAX.
5.08 (0.20) REF.
8.89 (0.35)
17.78 (0.70)
3.81 (0.15)
2.08 (0.08)
2X
1
3
N/C
Anode
2.54 (0.10)
2X
Conform to JEDEC outline D Pak (SMD-220)
Dimensions in millimeters and (inches)
2
www.irf.com
5
工业自动化与控制
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
