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SF1601PT_1

产品描述16 A, 50 V, SILICON, RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小99KB,共2页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
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SF1601PT_1概述

16 A, 50 V, SILICON, RECTIFIER DIODE

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SF1601PT
THRU
SF1606PT
16.0 AMPS. Glass Passivated Super Fast Rectifiers
Voltage Range
50 to 400 Volts
Current
16.0 Amperes
TO-3P/TO-247AD
Features
Dual rectifier construction, positive center-tap
Plastic package has Underwriters Laboratory Flammability
Classifications 94V-0
Glass passivated chip junctions
Superfast recovery time, high voltage
Low forward voltage, high current capability
Low thermal resistance
Low power loss, high efficiency
High temperature soldering guaranteed:
260
o
C / 10 seconds, 0.16”(4.06mm) lead lengths at 5 lbs.,
(2.3kg) tesion
Mechanical Data
Cases: JEDEC TO-3P/TO-247AD molded plastic
Terminals: Leads solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting position: Any
Weight: 0.2 ounce, 5.6 grams
PIN 1
PIN 3
PIN 2
Positive CT
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Tc=100
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage @8.0A
Maximum D.C. Reverse Current
at Rated
DC
Blocking Voltage
@ Tc=25℃
@ Tc=100℃
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θ
JC
SF
SF
SF
SF
SF
SF
1601PT 1602PT 1603PT 1604PT 1605PT 1606PT
Units
V
V
V
A
A
50
35
50
100
70
100
150
105
150
16
200
200
140
200
300
210
300
400
280
400
0.95
10.0
500
35
85.0
1.3
Maximum Reverse Recovery Time(Note 2) T
J
=25℃
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 3)
V
uA
uA
nS
pF
℃/W
2
Operating Junction Temperature Range
T
J
-55 to +150
Storage Temperature Range
T
STG
-55 to +150
Notes:
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
2. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, Recover to 0.25A.
3. Mounted on Heatsink. Size of 3” x 5” x 0.25” Al-Plate.
- 286 -

 
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