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FRF1001G_1

产品描述10 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AB
产品类别半导体    分立半导体   
文件大小211KB,共2页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
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FRF1001G_1概述

10 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AB

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FRF1001G - FRF1007G
Isolated 10 AMPS. Glass Passivated
Fast Recovery Rectifiers
ITO-220AB
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Mechanical Data
Cases: ITO-220AB molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, Lead free. Leads
solderable per MIL-STD-202, Method 208
guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260
o
C /10 seconds 0.25”,(6.35mm) from
case.
Mounting position: Any
Weight: 2.24 grams
Mounting torque: 5 in – 1bs. max.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 5.0A
Maximum DC Reverse Current @ T
C
=25
o
C
o
at Rated DC Blocking Voltage @ T
C
=125 C
Maximum Reverse Recovery Time ( Note 1)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance RθJC (Note 2)
Symbol
FRF
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
50
35
50
FRF
FRF
FRF
FRF
FRF
FRF
1001G 1002G 1003G 1004G 1005G 1006G 1007G
Units
V
V
V
A
A
V
uA
uA
nS
pF
o
C/W
o
C
100
70
100
200
140
200
400
280
400
10
125
1.3
5.0
100
600
420
600
800
560
800
1000
700
1000
150
250
40
5.0
-65 to +150
500
Cj
R
θJC
Operating and Storage Temperature Range
T
J
,T
STG
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Thermal Resistance from Junction to Case Per Leg Mounted on Heatsink.
3. Measured at 1MHz and Applied Reverse Voltage of 4.0 Volts D.C.
Version: A06

FRF1001G_1相似产品对比

FRF1001G_1 FRF1001G FRF1002G FRF1003G FRF1007G FRF1005G FRF1006G FRF1004G
描述 10 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB
是否Rohs认证 - 符合 符合 符合 符合 符合 符合 符合
Reach Compliance Code - compli compli compli compli compli compli compli
二极管类型 - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) - 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V
湿度敏感等级 - 1 1 1 1 1 1 1
最大非重复峰值正向电流 - 125 A 125 A 125 A 125 A 125 A 125 A 125 A
最高工作温度 - 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最大输出电流 - 10 A 10 A 10 A 10 A 10 A 10 A 10 A
最大重复峰值反向电压 - 50 V 100 V 200 V 1000 V 600 V 800 V 400 V
最大反向恢复时间 - 0.15 µs 0.15 µs 0.15 µs 0.5 µs 0.25 µs 0.5 µs 0.15 µs
表面贴装 - NO NO NO NO NO NO NO

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