FRAF1001G - FRAF1007G
Isolated 10 AMPS. Glass Passivated
Fast Recovery Rectifiers
ITO-220AC
.185(4.7)
.173(4.4)
.124(3.16)
.118(3.00)
.406(10.3)
.390(9.90)
.134(3.4)DIA
.113(3.0)DIA
.272(6.9)
.248(6.3)
.112(2.85)
.100(2.55)
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
.606(15.5)
.583(14.8)
.063(1.6)
MAX
.161(4.1)
.146(3.7)
.110(2.8)
.098(2.5)
.030(0.76)
.020(0.50)
.055(1.4)
.043(1.1)
.035(0.9)
.020(0.5)
.071(1.8)
MAX
.543(13.8)
.512(13.2)
Mechanical Data
Cases: ITO-220AC molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, Lead free. Leads
solderable per MIL-STD-202, Method 208
guaranteed
Polarity: As marked
High temperature soldering guaranteed:
o
260 C /10 seconds 0.25”,(6.35mm) from
case.
Mounting position: Any
Weight: 2.24 grams
Mounting torque: 5 in – 1bs. max.
2
.100(2.55)
.100(2.55)
PIN 1
PIN 2
CASE
Case Positive
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@T
C
= 55
o
C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage @ 10A
Maximum DC Reverse Current @ T
C
=25 C
at Rated DC Blocking Voltage @ T
C
=125
o
C
Maximum Reverse Recovery Time ( Note 2 )
Typical Junction Capacitance ( Note 1 ) T
J=
25 C
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
o
o
Symbol
FRAF FRAF FRAF FRAF FRAF FRAF FRAF
Units
1001G 1002G 1003G 1004G 1005G 1006G 1007G
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
50
35
50
100
70
100
200
140
200
400
280
400
10
150
1.3
5.0
100
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
uA
uA
nS
pF
o
C/W
o
C
150
250
60
5.0
-65 to +150
500
Cj
R
θJC
Notes:
T
J
,
T
STG
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
2. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate.
Version: A06
RATINGS AND CHARACTERISTIC CURVES (FRAF1001G THRU FRAF1007G)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- TYPICAL REVERSE CHARACTERISTICS
100
10
AVERAGE FORWARD CURRENT. (A)
8
40
6
Tj=125
0
C
INSTANTANEOUS REVERSE CURRENT. ( A)
4
10
Tj=75
0
C
2
4
2
1
0
0
50
100
o
150
CASE TEMPERATURE. ( C)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
150
0.4
0.2
Tj=25
0
C
PEAK FORWARD SURGE CURRENT. (A)
125
TJ=125
0
C
8.3ms Single Half Sine Wave
JEDEC Method
0.1
0
20
40
60
80
100
120
140
100
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
75
50
400
25
200
0
NUMBER OF CYCLES AT 60Hz
100
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT. (A)
1
2
5
10
20
50
100
FIG.4- TYPICAL JUNCTION CAPACITANCE
300
Tj=25
0
C
f=1.0MHz
Vsig=50mVp-p
40
20
10
250
CAPACITANCE.(pF)
200
4
2
1
150
100
0.4
50
0.2
0.1
0.6
Tj=25
o
C
Pulse Width=300 s
1% Duty Cycle
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0.1
0.5
1
5
10
50
100
500 1000
REVERSE VOLTAGE. (V)
INSTANTANEOUS FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
+0.5A
(-)
DUT
(+)
50Vdc
(approx)
(-)
PULSE
GENERATOR
(NOTE 2)
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
0
-0.25A
trr
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
Version: A06
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