Datasheet> 器件分类 > 存储> 71124S12Y8

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71124S12Y8: 产品描述Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32; 产品类别存储; 文件大小84KB，共8页; 制造商IDT (Integrated Device Technology)

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71124S12Y8概述

Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

71124S12Y8规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	SOJ
包装说明	0.400 INCH, PLASTIC, SOJ-32
针数	32
Reach Compliance Code	not_compliant
ECCN代码	3A991.B.2.B
最长访问时间	12 ns
I/O 类型	COMMON
JESD-30 代码	R-PDSO-J32
JESD-609代码	e0
长度	20.955 mm
内存密度	1048576 bit
内存集成电路类型	STANDARD SRAM
内存宽度	8
湿度敏感等级	3
功能数量	1
端子数量	32
字数	131072 words
字数代码	128000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	128KX8
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	SOJ
封装等效代码	SOJ32,.44
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	225
电源	5 V
认证状态	Not Qualified
座面最大高度	3.683 mm
最大待机电流	0.01 A
最小待机电流	4.5 V
最大压摆率	0.16 mA
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn85Pb15)
端子形式	J BEND
端子节距	1.27 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	30
宽度	10.16 mm
Base Number Matches	1

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CMOS Static RAM

1 Meg (128K x 8-Bit)

Revolutionary Pinout

Features

128K x 8 advanced high-speed CMOS static RAM

JEDEC revolutionary pinout (center power/GND) for

reduced noise.

Equal access and cycle times

– Commercial and Industrial: 12/15/20ns

One Chip Select plus one Output Enable pin

Bidirectional inputs and outputs directly TTL-compatible

Low power consumption via chip deselect

Available in a 32-pin 400 mil Plastic SOJ.

IDT71124

Description

The IDT71124 is a 1,048,576-bit high-speed static RAM orga-

nized as 128K x 8. It is fabricated using IDT’s high-performance,

high-reliability CMOS technology. This state-of-the-art technology,

combined with innovative circuit design techniques, provides a cost-

effective solution for high-speed memory needs. The JEDEC

centerpower/GND pinout reduces noise generation and improves

system performance.

The IDT71124 has an output enable pin which operates as fast

as 6ns, with address access times as fast as 12ns available. All

bidirectional inputs and outputs of the IDT71124 are TTL-compatible

and operation is from a single 5V supply. Fully static asynchronous

circuitry is used; no clocks or refreshes are required for operation.

The IDT71124 is packaged in a 32-pin 400 mil Plastic SOJ.

Functional Block Diagram

•

ADDRESS

DECODER

•

1,048,576-BIT

MEMORY ARRAY

I/O

- I/O

•

I/O CONTROL

CONTROL

LOGIC

3514 drw 01

FEBRUARY

2001

DSC-3514/10

71124S12Y8相似产品对比

	71124S12Y8	71124S20YI8	71124S15Y8	71124S15YI8	71124S20Y8	71124S12YI8
描述	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32	Standard SRAM, 128KX8, 20ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32	Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32	Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32	Standard SRAM, 128KX8, 20ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
零件包装代码	SOJ	SOJ	SOJ	SOJ	SOJ	SOJ
包装说明	0.400 INCH, PLASTIC, SOJ-32	0.400 INCH, PLASTIC, SOJ-32	0.400 INCH, PLASTIC, SOJ-32	0.400 INCH, PLASTIC, SOJ-32	0.400 INCH, PLASTIC, SOJ-32	0.400 INCH, PLASTIC, SOJ-32
针数	32	32	32	32	32	32
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN代码	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B
最长访问时间	12 ns	20 ns	15 ns	15 ns	20 ns	12 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PDSO-J32	R-PDSO-J32	R-PDSO-J32	R-PDSO-J32	R-PDSO-J32	R-PDSO-J32
JESD-609代码	e0	e0	e0	e0	e0	e0
长度	20.955 mm	20.955 mm	20.955 mm	20.955 mm	20.955 mm	20.955 mm
内存密度	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	8	8	8	8	8	8
湿度敏感等级	3	3	3	3	3	3
功能数量	1	1	1	1	1	1
端子数量	32	32	32	32	32	32
字数	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
字数代码	128000	128000	128000	128000	128000	128000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	85 °C	70 °C	85 °C	70 °C	85 °C
组织	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	SOJ	SOJ	SOJ	SOJ	SOJ	SOJ
封装等效代码	SOJ32,.44	SOJ32,.44	SOJ32,.44	SOJ32,.44	SOJ32,.44	SOJ32,.44
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
电源	5 V	5 V	5 V	5 V	5 V	5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	3.683 mm	3.683 mm	3.683 mm	3.683 mm	3.683 mm	3.683 mm
最大待机电流	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A
最小待机电流	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
最大压摆率	0.16 mA	0.14 mA	0.155 mA	0.155 mA	0.14 mA	0.16 mA
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)
端子形式	J BEND	J BEND	J BEND	J BEND	J BEND	J BEND
端子节距	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
宽度	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm
Base Number Matches	1	1	1	1	1	1
峰值回流温度（摄氏度）	225	225	225	225	225	-
处于峰值回流温度下的最长时间	30	30	30	30	30	-

71124S12Y8

71124S12Y8概述

71124S12Y8规格参数

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71124S12Y8相似产品对比

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