1N 4448W S / B A V16W S
Fast Sw itching Surface M ount D iode
Voltage R ange
75 Volts
200m W atts Pow er D issipation
Features
Fast sw itching speed
Surface m ount package ideally suited for
autom atic insertion
For general purpose sw itching applications
H igh conductance
Also available in lead free version
SO D -323F
M echanical D ata
C ase: SO D -323F, M olded plastic
Plastic M aterial – U L Flam m ability
C lassification R ating 94V-0
Term inals: Solderable per M IIL-STD -202,
M ethod 208
Polarity: C athode Band
M oisture sensitivity: Level 1 per J-STD -020A
M arking: T4, T6
W eight: 0.004 gram (approx.
)
0.094(2.40)
0.102(2.60)
0.073(1.85)
0.069(1.75)
0.016(0.4)
0.008(0.2)
0.006(0.15)
0.002(0.05)
0.051(1.3)
0.047(1.2)
0.035(0.9)
0.031(0.8)
D im ensions in inches and (m illim eters)
M axim um R atings and Electrical C haracteristics
R ating at 25℃ am bient tem perature unless otherw ise specified.
M axim um R atings
Type N um ber
N on-R epetitive Peak R everse Voltage
Peak R epetitive R everse Voltage
W orking P eak R everse Voltage
D C Blocking Voltage
R M S R everse Voltage
Forw ard C ontinuous C urrent (N ote 1)
Average R ectifier O utput C urrent (N ote 1)
N on-R epetitive Peak Forw ard Surge C urrent
@ t=1.0uS
@ t=1.0S
Pow er D issipation (N ote 1)
Therm al R esistance Junction to Am bient Air
(N ote 1)
O perating and Storage Tem perature R ange
Sym bol
V
RM
V
RRM
V
RWM
V
R
Value
100
75
53
300
150
2.0
1.0
200
625
-65 to + 150
M in
75
M ax
U nits
V
V
V
mA
mA
A
mW
O
V
R (R M S)
I
FM
Io
I
FSM
Pd
R
θ
JA
T
J
, T
STG
Sym bol
V
(BR )
R
C /W
O
C
U nits
V
V
Electrical C haracteristics
Type N um ber
R everse B reakdow n Voltage
Forw ard V oltage
IR =1.0uA
IF=1.0m A
IF= 10m A
IF =50m A
IF=150m A
0.715
0.855
-
V
F
1.0
1.25
Peak R everse C urrent VR =75V
1.0
VR =75V, Tj=150℃
50
-
I
R
VR =25V, TJ=150℃
30
25
VR =20V
-
Junction C apacitance
VR =0, f=1.0M H z
Cj
2.0
-
R everse R ecovery Tim e (N ote 2)
trr
4.0
N otes: 1. Valid Provided that Term inals are Kept at Am bient Tem perature.
2. R everse R ecovery Test C onditions: IF=IR =10m A, Irr=0.1 x I
R
, R
L
=100Ω
.
uA
nA
pF
nS
- 824 -
RATINGS AND CHARACTERISTIC CURVES (1N4448WS / BAV16WS)
FIG.1- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
1
300
FIG.2- POWER DERATING CURVE
INSTANTANEOUS FORWARD CURRENT. (A)
Pd POWER DISSIPATION (mA)
TJ = - 40 C
0
250
200
TJ = 150 C
0.1
0
150
100
TJ = 75 C
0
50
0.01
0
0
25
50
75
100
o
125
150
AMBIENT TEMPERATURE. ( C)
FIG.4- TYPICAL CAPACITANCE VS REVERSE VOLTAGE
TJ = 0
0
C
TJ = 25
0
C
0.001
0
0.5
1.0
1.5
INSTANTANEOUS FORWARD VOLTAGE (V)
2.0
1.8
f = 1.0 MHz
1.6
ICT TOTAL CAPACITANCE (pF)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
FIG.3- TYPICAL REVERSE CHARACTERISTICS
10000
TJ = 150 C
0
TJ = 125 C
1000
0
INSTANTANEOUS REVERSE CURRENT (nA)
100
TJ = 75 C
0
0
10
20
REVERSE VOLTAGE. (V)
30
40
TJ = 25 C
10
0
TJ = 0
0
C
1
TJ = -40 C
0
0.1
0
20
40
60
80
INSTANTANEOUS REVERSE VOLTAGE. (V)
100
- 825 -
传感器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
