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RSFAL_1

产品描述0.5 A, 50 V, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小229KB,共2页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
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RSFAL_1概述

0.5 A, 50 V, SILICON, SIGNAL DIODE

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RSFAL - RSFML
0.5 AMP. Surface Mount Fast Recovery Rectifiers
Sub SMA
Features
For surface mounted application
Glass passivated junction chip
High temperature metallurgically bonded
construction
Plastic material used carries Underwriters
Laboratory Classification 94V-0
Fast switching for high efficiency
High temperature soldering:
260
o
C / 10 seconds at terminals
Mechanical Data
Cases: Sub SMA plastic case
Terminals: Pure tin plated, Lead free.
Polarity: Indicated by cathode band
Packing: 12mm tape per EIA STD
RS-481
Weight: 15mg
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
RSF RSF RSF
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Marking Code ( Note 4 )
Maximum Average Forward Rectified Current
O
See Fig. 1 @T
L
=55 C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Max. Full Load Reverse Current, Full cycle
o
Average T
A
=55 C
Maximum Instantaneous Forward Voltage
@ 0.5A
o
Maximum DC Reverse Current @ T
A
=25 C
o
at Rated DC Blocking Voltage @ T
A
=125 C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
I
R
V
F
I
R
AL
50
35
50
BL
100
70
100
DL
200
140
200
RSF
GL
400
280
400
0.5
10
30
1.3
5
50
RSF
JL
600
420
600
RSF
KL
800
560
800
RSF
ML
1000
700
1000
Units
V
V
V
A
A
uA
V
uA
uA
nS
pF
mJ
o
FALYM FBLYM FDLYM FGLYM FJLYM FKLYM FMLYM
Trr
Cj
E
RSM
R
θJA
R
θJL
150
4.0
10
250
500
Non-repetitive Peak Reverse Avalanche
Energy L=120mH max prior to Surge,
Inductive load Switched off
Typical Thermal Resistance ( Note 3 )
7
150
32
Operating Temperature Range
T
J
-55 to +150
Storage Temperature Range
T
STG
-55 to +150
Notes:
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied V
R
=4.0 Volts
3. Measured on P.C.Board with 0.2” x 0.2” (5mm x 5mm) Copper Pad Areas.
4. FALYM: F=0.5A, A=50V, L-Low Profile, Y-Year Code, M-Month Code.
C
/W
o
C
o
C
Version: A06

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