Freescale Semiconductor
Technical Data
Document Number: MHW10236N
Rev. 0, 11/2006
Gallium Arsenide
CATV Amplifier Module
Features
•
Specified for 79 - , 112 - and 132 - Channel Loading
•
Excellent Distortion Performance
•
Integrated ESD Protection Diodes
•
GaAs FET Transistor Technology
•
Unconditionally Stable Under All Load Conditions
Applications
•
CATV Systems Operating in the 40 to 1000 MHz Frequency Range
•
Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk
Distribution Amplifiers for CATV Systems
•
Driver Amplifier in Linear General Purpose Applications
Description
•
24 Vdc Supply, 40 to 1000 MHz, CATV GaAs Forward Amplifier Module
•
RoHS Compliant
MHW10236N
1000 MHz
23.8 dB GAIN
132 - CHANNEL
GaAs CATV AMPLIFIER MODULE
CASE 1302 - 01, STYLE 1
Table 1. Maximum Ratings
Rating
RF Voltage Input (Single Tone)
DC Supply Voltage
Operating Case Temperature Range
Storage Temperature Range
Symbol
V
in
V
CC
T
C
T
stg
Value
+65
+26
- 20 to +100
- 40 to +100
Unit
dBmV
Vdc
°C
°C
Table 2. ESD Maximum Ratings
Rating
Surge Voltage per IEC 1000 - 4 - 5
Human Body Model per Mil. Std. 1686
Input Value
200
2
Output Value
200
2
Unit
V
kV
Table 3. Electrical Characteristics
(V
CC
= 24 Vdc, T
C
= +30°C, 75
Ω
system unless otherwise noted)
Characteristic
Frequency Range
Power Gain
Slope
Gain Flatness (40 - 870 MHz, Peak - to - Valley)
Return Loss — Input
(Z
o
= 75 Ohms)
40 - 500 MHz
501 - 870 MHz
871 - 1000 MHz
ORL
40 - 300 MHz
301 - 750 MHz
751 - 870 MHz
871 - 1000 MHz
20
19
16
12
—
—
—
—
—
—
—
—
1000 MHz
40 - 1000 MHz
Symbol
BW
G
p
S
G
F
IRL
20
18
15
—
—
—
—
—
—
dB
Min
40
23
0
—
Typ
—
23.8
0.55
—
Max
1000
24.5
1.2
0.8
Unit
MHz
dB
dB
dB
dB
Return Loss — Output
(Z
o
= 75 Ohms)
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MHW10236N
1
RF Device Data
Freescale Semiconductor
Table 3. Electrical Characteristics
(V
CC
= 24 Vdc, T
C
= +30°C, 75
Ω
system unless otherwise noted)
(continued)
Characteristic
Composite Second Order
(V
out
= +48 dBmV/ch., Worst Case)
(V
out
= +46 dBmV/ch., Worst Case)
(V
out
= +44 dBmV/ch., Worst Case)
Cross Modulation Distortion @ Ch 2
(V
out
= +48 dBmV/ch., FM = 55.25 MHz)
(V
out
= +46 dBmV/ch., FM = 55.25 MHz)
(V
out
= +44 dBmV/ch., FM = 55.25 MHz)
Composite Triple Beat
(V
out
= +48 dBmV/ch., Worst Case)
(V
out
= +46 dBmV/ch., Worst Case)
(V
out
= +44 dBmV/ch., Worst Case)
Noise Figure
79 - Channel FLAT
112 - Channel FLAT
132 - Channel FLAT
79 - Channel FLAT
112 - Channel FLAT
132 - Channel FLAT
79 - Channel FLAT
112 - Channel FLAT
132 - Channel FLAT
50 MHz
550 MHz
750 MHz
870 MHz
1000 MHz
Symbol
CSO
79
CSO
112
CSO
132
XMD
79
XMD
112
XMD
132
CTB
79
CTB
112
CTB
132
NF
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
240
Typ
- 66
- 64
- 64
- 57
- 57
- 57
- 66
- 66
- 68
5.0
5.0
5.0
5.3
5.6
255
Max
- 63
- 60
- 60
dBc
—
—
—
dBc
- 60
- 60
- 60
6.0
—
—
6.5
6.5
270
dB
Unit
dBc
DC Current (V
DC
= 24 V, T
C
= 45°C)
I
DC
mA
MHW10236N
2
RF Device Data
Freescale Semiconductor
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©
Freescale Semiconductor, Inc. 2006. All rights reserved.
MHW10236N
Document Number:
RF Device Data
MHW10236N
Rev. 0, 11/2006
Freescale Semiconductor
5