Ordering number : ENA0347
SBT80-10LS
SANYO Semiconductors
DATA SHEET
SBT80-10LS
Applications
•
Schottky Barrier Diode (Twin Type · Cathode Common)
100V, 8A Rectifier
High frequency rectification (switching regulators, converters, choppers).
Features
•
•
•
•
•
•
Tj=150°C.
Low forward voltage (VF max=0.80V).
Short reverse recovery time.
Low switching noise.
High reliability due to highly reliable planar structure.
Micaless package facilitating mounting.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz resistive load, Sine wave Tc=81°C
50Hz sine wave, 1 cycle
Conditions
Ratings
100
105
8
60
--55 to +150
--55 to +150
Unit
V
V
A
A
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Thermal Resistance
Symbol
VR
VF
IR
C
Rth(j-c)
Conditions
IR=1mA, Tj=25°C*
IF=3.0A, Tj=25°C*
VR=50V, Tj=25°C*
VR=10V, Tj=25°C*
Junction-Case : Smoothed DC
Ratings
min
100
0.80
0.1
90
5.0
typ
max
Unit
V
V
mA
pF
°C
/ W
Note)
*
: Value per element
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80906 / 22006SD MS IM TB-00002083 No. A0347-1/3
SBT80-10LS
170
Tc -- IO
Interterminal Capacitance, C -- pF
(1)Rectangular wave
θ
=60°
(2)Rectangular wave
θ
=120°
(3)Rectangular wave
θ
=180°
(4)Sine wave
θ
=180°
Rectangular
wave
θ
360°
5
C -- VR
f=100kHz
150
3
2
Case Temperature, Tc --
°C
130
100
100
7
5
90
Sine
wave
70
360°
3
4
5
(1)
6
7
(2)
(4)
8
9
(3)
10
3
2
5
7 1.0
2
3
5
7 10
2
3
5
50
0
180°
1
2
Average Output Current, IO -- A
80
IT08515
Transient Thermal Resistance, Rth(j-c) --
°C
/ W
IFSM -- t
Current waveform 50Hz sine wave
I
S
Reverse Voltage, VR -- V
10
7
5
7 100
2
ID01024
Rth(j-c) -- t
Surge Forward Current, IFSM(Peak) -- A
70
60
50
40
30
20
10
0
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
20ms
t
3
2
1.0
7
5
3
0.001 2 3 5 7 0.01 2 3
5 7 0.1
2 3
5 7 1.0
2 3
Time, t -- s
ID01025
Time, t -- s
5 7 10 2
ID01026
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of February, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0347-3/3
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