Ordering number : ENA0689
SBT100-10G
SANYO Semiconductors
DATA SHEET
SBT100-10G
Applications
•
Schottky Barrier Diode (Twin Type · Cathode Common)
100V, 10A Rectifier
High frequency rectification (switching regulators, converters, choppers).
Features
•
•
•
•
Tj=150°C.
Short reverse recovery time.
Low switching noise.
High reliability due to planar structure.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz resistive load, Sine wave Tc=73°C
50Hz sine wave, 1 cycle
Conditions
Ratings
100
105
10
60
--55 to +150
--55 to +150
Unit
V
V
A
A
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Thermal Resistance
Symbol
VR
VF
IR
C
Rth(j-c)
Conditions
IR=1mA, Tj=25°C*
IF=3.5A, Tj=25°C*
VR=50V, Tj=25°C*
VR=10V, Tj=25°C*
Junction-Case : Smoothed DC
Ratings
min
100
0.88
100
90
4.6
typ
max
Unit
V
V
µA
pF
°C
/ W
Note)
*
: Value per element
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71107SD TI IM TC-00000802 No. A0689-1/3
SBT100-10G
Package Dimensions
unit : mm (typ)
7507-003
10.2
5.1
3.6
4.5
1.3
Electrical Connection
Anode
Anode
2.7
6.3
Cathode
15.1
18.0
(5.6)
1.2
14.0
0.8
0.4
1 2 3
2.7
1 : Anode
2 : Cathode
3 : Anode
SANYO : TO-220
2.55
2.55
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
IF -- VF
Represented by max
100
7
5
IR -- VR
max
0
°
C
15
Tj=
typ
50
°
C
1
typ
5
°
C
12
typ
00
°
C
1
Reverse Current, IR -- mA
Forward Current, IF -- A
0
°
C
Tj=15
25
°
C
3
2
10
7
5
3
2
1.0
7
5
3
0.5
1.0
1.5
2.0
2.5
IT08511
0
20
40
60
80
100
120
IT08512
Forward Voltage, VF -- V
Average Forward Power Dissipation, PF(AV) -- W
20
Average Reverse Power Dissipation, PR(AV) -- W
PF(AV) -- IO
Reverse Voltage, VR -- V
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
180
°
360
°
θ
360
°
PR(AV) -- VRM
Sine
wave
18
16
14
12
10
8
6
4
2
0
0
2
4
180
°
360
°
(1)
(2)
(4) (3)
(1)Rectangular wave
θ
=300
°
(2)Rectangular wave
θ
=240
°
(3)Rectangular wave
θ
=180
°
(4)Sine wave
θ
=180
°
Rectangular
wave
VR
PR max at Tj=150°C
(1)
(2)
Rectangular
wave
θ
360
°
(3)
Sine
wave
VR
(1)Rectangular wave
θ
=60
°
(2)Rectangular wave
θ
=120
°
(3)Rectangular wave
θ
=180
°
(4)Sine wave
θ
=180
°
6
8
10
12
IT12075
(4)
120
IT08514
Average Output Current, IO -- A
Peak Reverse Voltage, VRM -- V
No. A0689-2/3
SBT100-10G
170
Tc -- IO
Interterminal Capacitance, C -- pF
5
C -- VR
f=100kHz
150
Case Temperature, Tc --
°
C
(1)Rectangular wave
θ
=60
°
(2)Rectangular wave
θ
=120
°
(3)Rectangular wave
θ
=180
°
(4)Sine wave
θ
=180
°
Rectangular
wave
θ
360
°
3
2
130
100
100
7
5
90
Sine
wave
70
360
°
4
3
2
50
0
180
°
2
(1)
6
8
(2) (4) (3)
10
12
IT12076
5
7 1.0
2
3
5
7 10
2
3
5
Average Output Current, IO -- A
80
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
70
Transient Thermal Resistance, Rth(j-c) --
°C
/ W
IFSM -- t
I
S
Reverse Voltage, VR -- V
7 100
2
ID01024
Rth(j-c) -- t
7
5
60
50
40
30
20
10
0
7 0.01
2
3
5
7 0.1
2
3
5
20ms
t
3
2
7
5
7 1.0
2
3
3
0.001 2 3 5 7 0.01 2 3
5 7 0.1
2 3
5 7 1.0
2 3
Time, t -- s
ID01025
Time, t -- s
5 7 10 2
IT12077
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
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above.
This catalog provides information as of July, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0689-3/3
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