Ordering number : ENA0916
SBM0203R
SANYO Semiconductors
DATA SHEET
SBM0203R
Features
•
•
•
Schottky Barrier Diode
30V, 0.2A Rectifier
Supports automatic mounting and permits SBM0203R applied sets to be made smaller.
Low forward voltage (VF max=0.6V).
Average output current : IO=0.2A.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Peak Reverse Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IO
IFSM
Tj
Tstg
60Hz sine wave, 1cycle
Conditions
Ratings
30
0.2
1
125
--40 to +125
Unit
V
A
A
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Forward Voltage
Reverse Current
Symbol
VF
IR
IF=0.2A
VR=10V
Conditions
Ratings
min
typ
max
0.6
1
Unit
V
µA
Marking : B
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90507RS TI IM TC-00000858 No. A0916-1/4
SBM0203R
Package Dimensions
unit : mm (typ)
7810-001
0.3
Cathode mark
0.12
1.2
1.6
0.3
0.8
0.6
1000
IF -- VF
1000
IR -- VR
Ta=125
°
C
100
100
Forward Current, IF -- mA
Reverse Current, IR --
µA
10
10
75
°
C
25
°
C
75
°
C
--2
5
°
C
1.0
Ta
=1
25
°
C
1.0
25
°
C
0.1
0.1
0.01
0.01
--25
°
C
0.001
0
0.1
0.2
0.3
0.4
0.5
0.6
IT12825
0.001
0
10
20
30
IT12826
Forward Voltage, VF -- V
0.3
PF -- IO
Reverse Voltage, VR -- V
0.5
IO -- Ta
0A
Forward Power Dissipation, PF -- W
0V
t
T
Average Output Current, IO -- A
0.4
IO
VR D=t/T
VR=15V
Tj=125°C
0.2
DC
0.3
0.5
0.5
0.2
SIN
DC
0.1
SIN
0.1
0
0
0.1
0.2
0.3
0.4
0.5
IT12827
0
0
25
50
75
100
125
IT12828
Average Output Current, IO -- A
Ambient Temperature, Ta --
°C
No. A0916-2/4
SBM0203R
0.5
IO -- Tc
0A
0V
t
T
IO
5
VR D=t/T
VR=15V
Tj=125°C
3
2
C -- VR
f=1MHz
0.4
DC
0.3
Interterminal Capacitance, C -- pF
Average Output Current, IO -- A
10
7
5
3
2
0.5
0.2
SIN
0.1
0
0
25
50
75
100
125
IT12829
1.0
0
10
20
30
IT12830
Case Temperature, Tc --
°C
7
Reverse Voltage, VR -- V
10
IFSM -- n
IFSM
IFSM -- t
IFSM
t
Ta=25°C
9
8.3ms 8.3ms
1cyc
Surge Forward Current, IFSM -- A
6
Surge Forward Current, IFSM -- A
8
7
6
5
4
3
2
1
5
4
3
2
1
0
1.0
2
3
5
7
10
2
3
5
Number of Cycles, n
1000
100
IT12831
7
0
1.0
2
3
5
7
10
2
3
5
Time, t -- s
7 100
IT12832
Rth(j-c) -- t
Mounted on a glass epoxy board
Rth(j--a)
Transient Thermal Resistance, Rth --
°C
/ W
7
5
3
2
Rth(j--c)
100
7
5
3
2
10
0.0012 3 5 7
0.012 3 5 70.1 2 3 5 71.0 2 3 5 7 10 2 3 5 7
100 2 3 5 71000
Time, t -- s
IT12840
No. A0916-3/4
SBM0203R
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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above.
This catalog provides information as of September, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0916-4/4
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