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SB20015M

产品描述2 A, 15 V, SILICON, RECTIFIER DIODE
产品类别分立半导体    二极管   
文件大小34KB,共3页
制造商SANYO
官网地址http://www.semic.sanyo.co.jp/english/index-e.html
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SB20015M概述

2 A, 15 V, SILICON, RECTIFIER DIODE

SB20015M规格参数

参数名称属性值
厂商名称SANYO
包装说明R-PDSO-F3
针数3
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性HIGH RELIABILITY
应用GENERAL PURPOSE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码R-PDSO-F3
最大非重复峰值正向电流10 A
元件数量1
相数1
端子数量3
最大输出电流2 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
认证状态Not Qualified
最大重复峰值反向电压15 V
最大反向恢复时间0.01 µs
表面贴装YES
技术SCHOTTKY
端子形式FLAT
端子位置DUAL

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Ordering number : ENA0198
SB20015M
SANYO Semiconductors
DATA SHEET
SB20015M
Applications
Low IR Schottky Barrier Diode
15V, 2.0A Rectifier
High frequency rectification (switching regulators, converters, choppers).
Features
Small switching noise.
Low leakage current and high reliability due to highly reliable planar structure.
Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm).
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Mounted on a ceramic board (500mm
!0.8mm)
2
Conditions
Ratings
15
17
2.0
10
--55 to +125
--55 to +125
Unit
V
V
A
A
°C
°C
50Hz sine wave, 1 cycle
Electrical Characteristics
at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
C
trr
Rth(j-a)
IR=0.2mA
IF=2.0A
VR=7.5V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
Mounted on a ceramic board (500mm
2
!0.8mm)
Conditions
Ratings
min
15
0.55
6
27
10
70
typ
max
Unit
V
V
µA
pF
ns
°C
/ W
Marking : SN
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72606 / 32406SB MS IM TB-00002129 No. A0198-1/3

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