1N4001GP thru 1N4007GP
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Junction Rectifier
DO-204AL
(DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
d*
e
Features
ent
Pat
Reverse Voltage
50 to 1000V
Forward Current
1.0A
0.205 (5.2)
0.160 (4.1)
®
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
NOTE:
Lead diameter is
0.026 (0.66)
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• High temperature metallurgically bonded construction
• Cavity-free glass passivated junction
• Capable of meeting environmental standards of
MIL-S-19500
• 1.0 Ampere operation at T
A
= 75°C with no thermal
runaway
• Typical I
R
less than 0.1µA
• High temperature soldering guaranteed: 350°C/10 seconds,
0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
Mechanical Data
Case:
JEDEC DO-204AL, molded plastic over glass body
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.012 oz., 0.3 g
Ratings at 25°C ambient temperature unless otherwise specified.
0.023 (0.58)
for suffix "E" part numbers
Dimensions in inches and (millimeters)
*
Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306
Maximum Ratings & Thermal Characteristics
Parameter
Maximum repetitive peak reverse voltage
* Maximum RMS voltage
* Maximum DC blocking voltage
* Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
= 75°C
* Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
* Maximum full load reverse current, full cycle
average 0.375" (9.5mm) lead length T
A
= 75°C
Typical thermal resistance
(Note 1)
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
R(AV)
R
θJA
R
θJL
T
J
, T
STG
1N
1N
1N
1N
1N
1N
1N
4001GP 4002GP 4003GP 4004GP 4005GP 4006GP 4007GP
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30
30
55
25
–65 to +175
600
420
600
800
560
800
1000
700
1000
Unit
V
V
V
A
A
µA
°C/W
°C
* Operating junction and storage temperature range
Electrical Characteristics
* Maximum DC reverse current
at rated DC blocking voltage
Typical reverse recovery time at
I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum instantaneous forward voltage at 1.0A
T
A
= 25°C
T
A
= 125°C
V
F
I
R
t
rr
C
J
1.1
5.0
50
2.0
8.0
*JEDEC registered values
V
µA
µs
pF
Typical junction capacitance at 4.0V, 1MHz
Notes:
(1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted
Document Number 88504
08-Jul-03
www.vishay.com
1
1N4001GP thru 1N4007GP
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Forward Current Derating Curve
1.0
30
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
Peak Forward Surge Current (A)
T
J
= T
Jmax
8.3ms Single Half Sine-Wave
(JEDEC Method)
Average Forward Rectified Current (A)
60H
Z
Resistive or
Inductive Load
0.8
25
0.6
20
0.4
15
0.2
0.375" (9.5mm)
Lead Length
0
0
25
50
75
100
125
150
175
10
5.0
1
10
100
Ambient Temperature (°C)
Number of Cycles at 60H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
20
10
Fig. 4 – Typical Reverse Characteristics
Instantaneous Reverse Current (µA)
T
J
= 100°C
Instantaneous Forward Current (A)
10
1
T
J
= 25°C
Pulse Width = 300µs
1% Duty Cycle
1
0.1
0.1
T
J
= 25°C
0.01
0.6
0.01
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction Capacitance
20
100
Fig. 6 – Typical Transient Thermal
Impedance
Transient Thermal Impedance (°C/W)
T
J
= 25°C
f = 1.0MH
Z
Vsig = 50mVp-p
Junction Capacitance (pF)
10
10
1
1
0.1
1
10
100
0.1
0.01
0.1
1
10
100
Reverse Voltage (V)
t -- Pulse Duration (sec)
www.vishay.com
2
Document Number 88504
08-Jul-03
NXP MCU
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