Ordering number : ENA0498
Monolithic Linear IC
LA5779MP
Overview
Separately-excited Step-down
Switching Regulator
(Variable Type)
The LA5779MP is a Separately-excited step-down switching regulator (variable type).
Functions
•
High efficiency.
•
Six external parts.
•
Time-base generator (160kHz) incorporated.
•
Current limiter incorporated.
•
Thermal shutdown circuit incorporated.
•
ON/OFF function.
Specifications
Absolute
Maximum Ratings
at Ta = 25°C
Parameter
Maximum Input voltage
Maximum Output current
SW pin application reverse voltage
Allowable power dissipation
Operating temperature
Storage temperature
Symbol
VIN max
IO max
VSW
Pd max
Topr
Tstg
Mounted on a substrate.*
Conditions
Ratings
30
3
-1
3.9
-30 to +125
-40 to +150
Unit
V
A
V
W
°C
°C
* Specified substrate : 76.1×114.3×1.6mm
3
: Copper foil ratio 60％ FR4
Recommended Operating Conditions
at Ta = 25°C
Parameter
Input voltage range
Symbol
VIN
Conditions
Ratings
4.5 to 28
Unit
V
■
Any and all SANYO Semiconductor products described or contained herein do not have specifications
■
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
that can handle applications that require extremely high levels of reliability, such as life-support systems,
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nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
N1306 MS PC 20060411-S00008 No.A0498-1/4
LA5779MP
Electrical Characteristics
at Ta
=
25°C, VO = 3.3V
Parameter
Reference voltage
Efficiency
Switching frequency
Switching frequency when
short-circuit protection is active
Line regulation
Load regulation
Output voltage temperature
coefficient
Ripple attenuation factor
Output leak current
Current limiter operating voltage
Operating current
Standby current
ENA pin LOW voltage range
ENA pin HIGH voltage range
Thermal shutdown operating
temperature
Thermal shutdown Hysteresis
width
* Design target value: No measurement made.
∆TSD
Designed target value. *
15
°C
RREJ
IOleak
IS
IVIN
ISTBY
VENAL
VENAH
TSD
Designed target value. *
2.4
165
f = 100 to 120Hz
VIN = 15V, SWOUT = -0.4V
VIN = 15V
VIN = 15V
VIN = 15V, ENA = 5V
3.1
5.6
50
100
0.6
VIN
45
50
dB
µA
A
mA
µA
V
V
°C
∆V
OLINE
∆V
OLOAD
∆V
O/∆Ta
VIN = 8 to 20V, IO = 1.0A
VIN = 15V, IO = 0.5 to 1.5A
Designed target value. *
40
10
±0.5
100
30
mV
mV
mV/°C
Symbol
VOS
η
f
fshort
Conditions
VIN = 15V, IO = 1.0A
VIN = 15V, IO = 1.0A, Set VO = 5V
VIN = 15V, IO = 1.0A
VIN = 15V, VOS = 0V
128
15
Ratings
min
1.20
typ
1.23
84
160
30
192
45
max
1.26
Unit
V
%
kHz
kHz
Package Dimensions
unit : mm (typ)
3275
4.5
Pd max - Ta
1.2
10.0
4.5
Allowable power dissipation, Pd max - W
1.3
4.0
3.90
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
-30 -20
Specified sbstrate: 76.1×114.3×1.6mm
3
Copper foil ratio 60% FR4
(8.8)
9.9
(1.6)
1.7
0.9
0.4
4.5
1
5
SANYO : SMP5
1.5
0.2
2.7
0
20
40
60
80
100
120
140
160
Ambient temperature, Ta -
°C
MSG06072
Pin Assignment
(1) VIN (2) SWOUT
(3) GND
(4) VOS
(5) ENA
No.A0498-2/4
LA5779MP
Description of Functional Settings
Calculation equation to set the output voltage
This IC controls the switching output so that the VOS pin voltage becomes 1.23V (typ).
The equation to set the output voltage is as follows:
R2
VO = 1+
×
1.23V(typ)
R1
The VOS pin has the inrush current of 1µA (typ). Therefore, the error becomes larger when R1 and R2 resistance
values are large.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted
in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual
property rights or other rights of third parties.
This catalog provides information as of November, 2006. Specifications and information herein are subject
to change without notice.
PS No.A0498-4/4
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