Ordering number : ENN8403
FW507
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
FW507
Features
•
General-Purpose Switching Device
Applications
•
Composite type with a low ON-resistance, ultrahigh-speed switching, low voltage drive, P-channel MOSFET and
a short reverse recovery time, low forward voltage schottky barrier diode facilitating high-density mounting.
The FW507 incorporates two chips being equivalent to the MCH3312 and the SB1003M in one package.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1 cycle
30
35
1
5
--55 to +125
--55 to +125
V
V
A
A
°C
°C
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (3000mm
!0.8mm)
≤10s
1unit
2
Symbol
Conditions
Ratings
--30
±20
--3
--12
2
150
--55 to +125
Unit
V
V
A
A
W
°C
°C
Marking : W507
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
81205PA MS IM TB-00001717 No.8403-1/6
FW507
Electrical Characteristics
at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
VR
VF
IR
C
trr
IR=200µA
IF=1A
VR=15V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
30
0.47
27
10
0.55
15
V
V
µA
pF
ns
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=-
-1mA
VDS=--10V, ID=-
-3A
ID=--3A, VGS=--10V
ID=--1.5A, VGS=-
-4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=-
-10V, ID=--3A
VDS=--10V, VGS=-
-10V, ID=--3A
VDS=--10V, VGS=-
-10V, ID=--3A
IS=--3A, VGS=0V
--1.2
1.9
3.3
115
210
200
47
32
7.2
6.8
18
8.0
5.5
0.98
0.82
--0.91
--1.2
150
295
--30
--1
±10
--2.6
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Symbol
Conditions
Ratings
min
typ
max
Unit
Package Dimensions
unit : mm
7005-012
8
5
0.3
Electrical Connection
8
7
6
5
1 : Anode
2 : Anode
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Cathode
8 : Cathode
Top view
4.4
6.0
1
4
0.43
0.2
5.0
1 : Anode
2 : Anode
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Cathode
8 : Cathode
SANYO : SOP8
1
2
3
4
0.595
1.27
0.1
1.5
1.8 MAX
No.8403-2/6
FW507
Switching Time Test Circuit
[MOSFET]
VIN
0V
--10V
VIN
ID= --3A
RL=5Ω
VDD= --15V
trr Test Circuit
[SBD]
Duty≤10%
100mA 100mA
10mA
50Ω
10µs
100Ω
10Ω
D
PW=10µs
D.C.≤1%
VOUT
--5V
G
trr
FW507
P.G
50Ω
S
V
--6.0
V
--4.
0V
--2.0
ID -- VDS
--10.
0
[MOSFET]
--5.0
ID -- VGS
VDS= --10V
[MOSFET]
--4.5
--4.0
--1.6
Drain Current, ID -- A
.
--3
--1.2
5V
Drain Current, ID -- A
--3.5
--3.0
--2.5
--2.0
--0.8
VGS= --3.0V
--0.4
--1.0
--0.5
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
0
0
--0.5
--1.0
--1.5
--2.0
--2.5
25
--3.0
--3.5
5
°
C
--25
°
C
°
C
--1.5
Ta=
7
--4.0
--4.5
400
Drain-to-Source Voltage, VDS -- V
IT03223
[MOSFET]
RDS(on) -- VGS
Ta=25°C
400
Gate-to-Source Voltage, VGS -- V
IT03224
[MOSFET]
RDS(on) -- Ta
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
350
300
250
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
350
300
250
200
150
100
50
0
--60
--1.0A
200
--0
I D=
.5A
= --4
, VGS
V
ID= --0.5A
150
100
50
0
0
--2
--4
--6
--8
--10
--12
--14
--16
--18
--20
= --10
.0A, V GS
1
I D= --
V
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT03225
Ambient Temperature, Ta --
°C
IT03226
No.8403-3/6
FW507
10
y
fs -- ID
[MOSFET]
VDS= --10V
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
IS -- VSD
[MOSFET]
VGS=0V
Forward Transfer Admittance,
y
fs -- S
7
5
3
2
25
°
C
°
C
75
1.0
7
5
3
2
Ta
-25
=-
°
C
Source Current, IS -- A
°
C
Ta=7
5
--0.3
--0.4
--0.5
--0.6
0.1
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
2
100
5 7 --10
IT03227
--0.01
--0.2
--0.7
--25
°
C
--0.8
--0.9
25
°
C
--1.0
--1.1
--1.2
SW Time -- ID
[MOSFET]
3
2
Ciss, Coss, Crss -- VDS
[MOSFET]
f=1MHz
Ciss
Diode Forward Voltage, VSD -- V
IT03228
VDD=
--15V
VGS=
--10V
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
7
5
3
2
10
7
5
3
2
1.0
--0.1
10
2
3
5
7
--1.0
2
3
5
IT03229
0
--5
--10
--15
--20
--25
--30
100
7
5
td(off)
td(on)
tf
Coss
3
2
Crss
tr
Drain Current, ID -- A
--10
--9
VGS -- Qg
[MOSFET]
Gate-to-Source Voltage, VGS -- V
VDS= --10V
ID= --2A
Drain Current, ID -- A
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
Drain-to-Source Voltage, VDS -- V
IT03230
ASO
[MOSFET]
IDP= --12A
ID= --3A
--8
--7
--6
--5
--4
--3
--2
--1
0
0
1
2
3
4
5
6
IT03231
10
<10µs
10
0
µ
s
0m
s
10
m
1m
s
s
10
s(
Ta
=
25
°
C
)
Operation in this
area is limited by RDS(on).
--0.01
--0.01
Ta=25°C
Single pulse
Mounted on a ceramic board (3000mm
2
!0.8mm)
≤10s
1unit
2 3
5 7 --0.1
2 3
5 7 --1.0
2 3
5 7 --10
2 3
5
Total Gate Charge, Qg -- nC
2.2
PD -- Ta
M
ou
Drain-to-Source Voltage, VDS -- V
IT09728
[MOSFET]
Allowable Power Dissipation, PD -- W
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
nte
do
na
ce
ram
ic
bo
ard
(3
00
0m
m
2
!
0
.8m
m)
≤
1
0s
1u
nit
160
40
60
80
100
120
140
Ambient Temperature, Ta --
°C
IT09729
No.8403-4/6
FW507
10
7
5
3
2
IF -- VF
[SBD]
5
3
2
1000 7
5
3
2
100
7
5
3
2
10 7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
IR -- VR
Ta=125
°
C
100
°
C
[SBD]
Reverse Current, IR --
µA
Forward Current, IF -- A
°
C
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0
50
°
C
75
°
C
50
°
C
25
°
C
0
°
C
75
25
°
C
--25
°
C
10
25
°
C
0.001
0.1
0.2
0.3
0.4
0.5
0.6
0.7
IT07934
Ta=
1
--25
°
C
10
20
30
40
IT07935
Forward Voltage, VF -- V
Reverse Voltage, VR -- V
140
Average Forward Power Dissipation, PF(AV) -- W
0.7
PF(AV) -- IO
Rectangular wave
(1)
[SBD]
(2) (4) (3)
Tc -- IO
[SBD]
0.6
θ
0.5
360°
120
Case Temperature, Tc --
°C
(1)Rectangular wave
θ
=60
°
(2)Rectangular wave
θ
=120
°
(3)Rectangular wave
θ
=180
°
(4)Sine wave
θ
=180
°
100
Sine wave
0.4
180°
360°
80
0.3
60
0.2
0.1
0
0
0.2
0.4
(1)Rectangular wave
θ=60°
(2)Rectangular wave
θ=120°
(3)Rectangular wave
θ=180°
(4)Sine wave
θ=180°
0.6
0.8
1.0
1.2
IT08184
40
(1)
(2) (4)
(3)
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
IT08185
Average Output Current, IO -- A
3
2
Average Output Current, IO -- A
C -- VR
[SBD]
f=1MHz
Interterminal Capacitance, C -- pF
100
7
5
3
2
10
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Reverse Voltage, VR -- V
5 7 100
IT07938
No.8403-5/6
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