Ordering number : ENA0424
FW340
SANYO Semiconductors
DATA SHEET
N-Channel and P-Channel Silicon MOSFETs
FW340
Features
•
•
General-Purpose Switching Device
Applications
•
For motor drives, inverters.
Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage
contained in a single package.
High-density mounting.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤100ms)
Drain Current (PW≤10µs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
ID
ID
IDP
PD
PT
Tch
Tstg
Duty cycle≤1%
Duty cycle≤1%
Duty cycle≤1%
Mounted on a ceramic board
(2000mm
2
!0.8mm)1unit,
PW≤10s
Mounted on a ceramic board
(2000mm
2
!0.8mm),
PW≤10s
Conditions
N-channel
30
±20
5
5.5
7
20
1.8
2.2
150
--55 to +150
P-channel
-
-30
±20
--5
--5.5
--9
-
-20
Unit
V
V
A
A
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=5A
ID=5A, VGS=10V
ID=3A, VGS=4.5V
ID=3A, VGS=4V
30
1
±10
1.2
3.3
5.5
37
56
64
48
78
90
2.6
V
µA
µA
V
S
mΩ
mΩ
mΩ
Symbol
Conditions
Ratings
min
typ
max
Unit
Marking : W340
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 / 62006PA MS IM TB-00002412 No. A0424-1/6
FW340
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=-
-1mA
VDS=--10V, ID=-
-5A
ID=--5A, VGS=--10V
ID=--3A, VGS=--4.5V
ID=--3A, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=-
-10V, ID=--5A
VDS=--10V, VGS=-
-10V, ID=--5A
VDS=--10V, VGS=-
-10V, ID=--5A
IS=--5A, VGS=0V
--1.2
4.5
7.5
41
62
70
1000
195
150
13
82
87
55
16.5
2.5
2.5
--0.85
--1.5
53
87
98
--30
--1
±10
--2.6
V
µA
µA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=5A
VDS=10V, VGS=10V, ID=5A
VDS=10V, VGS=10V, ID=5A
IS=5A, VGS=0V
Ratings
min
typ
460
95
75
11
20
30
20
8.6
2.0
1.6
0.9
1.2
max
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Package Dimensions
unit : mm
7005-003
Electrical Connection
8
8
5
0.3
7
6
5
1
4
0.43
0.2
5.0
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Top view
4.4
6.0
1
2
3
4
0.595
1.27
0.1
1.5
1.8 MAX
No. A0424-2/6
FW340
Switching Time Test Circuit
[N-channel]
VIN
10V
0V
VIN
ID=5A
RL=3Ω
VDD=15V
[P-channel]
VIN
0V
--10V
VIN
VOUT
VDD= --15V
ID= --5A
RL=3Ω
D
PW=10µs
D.C.≤1%
D
PW=10µs
D.C.≤1%
VOUT
G
G
FW340
P.G
50Ω
FW340
P.G
50Ω
S
S
5
ID -- VDS
10.0V
8.0V
6.0V
[Nch]
10
9
8
ID -- VGS
[Nch]
VDS=10V
4.0V
V
3.5
4
3.0
V
Drain Current, ID -- A
Drain Current, ID -- A
2.5V
7
6
5
4
3
2
1
3
2
1
VGS=2.0V
0
0
0.2
0.4
0.6
0.8
1.0
IT04957
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Drain-to-Source Voltage, VDS -- V
140
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
140
Ta=7
5
°
C
--25
°
C
25
°
C
IT04958
[Nch]
Ta=25
°
C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
RDS(on) -- Ta
[Nch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
120
120
100
100
80
ID=3A
5A
80
I D=3
60
V
=4.0
VGS
A,
60
40
40
V
=4.5
VGS
A,
I D=3
=10.0V
, V GS
I D=5A
20
0
0
2
4
6
8
10
12
14
16
20
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT11087
Ambient Temperature, Ta --
°C
IT11088
No. A0424-3/6
FW340
10
y
fs -- ID
VDS=10V
[Nch]
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
IS -- VSD
Forward Transfer Admittance,
y
fs -- S
7
5
3
2
[Nch]
VGS=0V
1.0
7
5
3
2
0.1
0.01
2
3
°
C
-25
=-
°
C
C
Ta
°
75
25
Source Current, IS -- A
5 7
0.1
2
3
5 7
1.0
2
3
Drain Current, ID -- A
100
10
IT11089
5 7
0
0.2
0.4
Ta=
75
°
C
25
°
C
--25
°
C
0.6
0.8
1.0
1.2
1.4
IT04962
SW Time -- ID
[Nch]
Switching Time, SW Time -- ns
7
VDD=15V
VGS=10V
Ciss, Coss, Crss -- pF
1000
7
5
Ciss, Coss, Crss -- VDS
Ciss
Diode Forward Voltage, VSD -- V
[Nch]
f=1MHz
5
3
2
td (off)
3
2
tf
100
7
5
Coss
Crss
tr
10
0.1
2
3
5
7
1.0
2
td(on)
3
5
10
IT04963
7
3
0
5
10
15
20
25
30
IT11090
Drain Current, ID -- A
10
9
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
[Nch]
ASO
[Nch]
PW≤10µs
100
µ
s
1m
s
10
Gate-to-Source Voltage, VGS -- V
VDS=10V
ID=5A
Drain Current, ID -- A
IDP=20A
ID=5A
10
0m
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
ms
s
DC
Operation in this area
is limited by RDS(on).
op
10
s
era
t
ion
0.01
0.1
Ta=25°C
Single pulse
Mounted on a ceramic board (2000mm
2
!0.8mm)
1unit
2
3
5
7 1.0
2
3
5
7 10
2
3
5
Total Gate Charge, Qg -- nC
--5.0
IT11091
ID -- VDS
0V
5V
Drain-to-Source Voltage, VDS -- V
--10
IT11092
[Pch]
ID -- VGS
[Pch]
VDS= --10V
--9
--8
--10
.
--4.0
--6.
0V
Drain Current, ID -- A
5V
-
-4.
0V
--3
.
Drain Current, ID -- A
--7
--6
--5
--3.0
--3.0V
--4
.
--3
--1
0
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
Drain-to-Source Voltage, VDS -- V
IT07390
Gate-to-Source Voltage, VGS -- V
25
°
--1.0
VGS= --2.5V
--2
Ta=7
5
°
C
--25
°
C
--2.0
--4
C
IT11093
No. A0424-4/6
FW340
140
RDS(on) -- VGS
ID=
--5A
[Pch]
Ta=25°C
140
RDS(on) -- Ta
[Pch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
120
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
120
ID=
--3A
100
100
80
80
60
60
40
40
V
=
--4
, VGS
--3A
V
I D=
--4.5
S=
, VG
--3A
I D=
V
=
--10
, V GS
5A
I D=
--
20
0
0
--2
--4
--6
--8
--10
--12
--14
--16
20
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
10
y
fs -- ID
IT07392
Ambient Temperature, Ta --
°C
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
IT07393
[Pch]
IS -- VSD
[Pch]
VGS=0V
Forward Transfer Admittance,
y
fs -- S
7
5
3
2
VDS= --10V
5
°
C
--0.4
1.0
7
5
3
2
2
5
°
C
0.1
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
3
2
5 7 --10
IT11094
--0.01
--0.2
Ta=
7
--0.6
25
°
C
°
C
75
--25
°
C
--0.8
=
Ta
--2
C
5
°
Source Current, IS -- A
--1.0
--1.2
IT07395
SW Time -- ID
VDD= --15V
VGS= --10V
td(off)
[Pch]
3
2
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
[Pch]
f=1MHz
Switching Time, SW Time -- ns
Ciss, Coss, Crss -- pF
100
7
5
3
2
1000
7
5
3
2
Ciss
tf
tr
Coss
Crss
10
7
5
3
--0.1
td(on)
100
7
5
2
3
5
7
--1.0
2
3
5
Drain Current, ID -- A
--10
--9
--10
IT07396
7
0
--5
--10
--15
--20
--25
--30
IT07397
Drain-to-Source Voltage, VDS -- V
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
VGS -- Qg
VDS= --10V
ID= --5A
[Pch]
ASO
IDP= --20A
ID= --5A
[Pch]
PW≤10µs
Gate-to-Source Voltage, VGS -- V
--8
--7
--6
--5
--4
--3
--2
--1
0
0
2
4
6
8
10
12
14
16
18
1m
Drain Current, ID -- A
s
10
m
10
0
µ
s
s
10
0m
DC
s
Operation in this area
is limited by RDS(on).
10
s
op
era
tio
n
--0.01
--0.1
Ta=25°C
Single pulse
Mounted on a ceramic board (2000mm
2
!0.8mm)
1unit
2
3
5
7 --1.0
2
3
5
7 --10
2
3
5
Total Gate Charge, Qg -- nC
IT07398
Drain-to-Source Voltage, VDS -- V
IT11095
No. A0424-5/6
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