1N914BA0G: 产品描述Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2; 产品类别分立半导体二极管; 文件大小184KB，共4页; 制造商Taiwan Semiconductor; 官网地址http://www.taiwansemi.com/; 标准

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1N914BA0G概述

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

1N914BA0G规格参数

参数名称	属性值
是否Rohs认证	符合
包装说明	HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Code	compli
ECCN代码	EAR99
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JEDEC-95代码	DO-35
JESD-30 代码	O-LALF-W2
元件数量	1
端子数量	2
最高工作温度	150 °C
最低工作温度	-65 °C
最大输出电流	0.15 A
封装主体材料	GLASS
封装形状	ROUND
封装形式	LONG FORM
峰值回流温度（摄氏度）	NOT SPECIFIED
最大功率耗散	0.5 W
最大重复峰值反向电压	100 V
最大反向恢复时间	0.004 µs
表面贴装	NO
端子形式	WIRE
端子位置	AXIAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
Base Number Matches	1

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1N4148/1N4448/1N914B

Taiwan Semiconductor

Small Signal Product

500mW High Speed Switching Diode

FEATURES

- Fast switching device (trr<4.0ns)

- Through-hole device type mounting

- Moisture sensitivity level 1

- Solder hot dip Tin(Sn) lead finish

- Pb free version and RoHS compliant

- All external surfaces are corrosion resistant and

leads are readily solderable

- Packing code with suffix "G" means

Halogen-free

DO-35

Hermetically Sealed Glass

MECHANICAL DATA

- Case : DO-35

- High temperature soldering guaranteed: 260°C/10s

- Polarity: Indicated by black cathode band

- Weight : 109 ± 4 mg

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

=25℃ unless otherwise noted)

PARAMETER

Power Dissipation

Repetitive Peak Reverse Voltage

Peak Forward Surge Current

Pluse Width = 1μs, Square Wave

Non-Repetitive Peak Forward Current

Average Forward Current

Thermal Resistance (Junction to Ambient)

Junction and Storage Temperature Range

PARAMETER

Reverse Breakdown Voltage

SYMBOL

RRM

FSM

θJA

, T

STG

SYMBOL

(BR)

MIN

100

0.62

Forward Voltage

Reverse Leakage Current

Junction Capacitance

Reverse Recovery Time (Note 1)

Note : 1. Test Conditions : I

=10mA, V

=6V, R

=100Ω, I

=1mA

Trr

TYP

VALUE

500

100

2.0

450

150

240

-65 to +150

MAX

CONDITION

=100μA

=5μA

UNIT

C/W

UNIT

0.72 1N4448 , 1N914B I

=5.0mA

=10.0mA

1.0 1N4148

1.0

5.0

4.0

1N4448, 1N914B

=20V

=75V

=0 , f=1.0MHz

=100.0mA

μA

Document Number: DS_S1410004

Version: H14

1N914BA0G相似产品对比

	1N914BA0G	1N4448-L0R0G	1N4448-L0A0G	1N914B-B0R0G	1N914BR0G	1N4148-B0R0G	11021FL210034-11	FCF06FS-2321P
描述	Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2	Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2	Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2	Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2	Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2	Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2	Board Connector, 34 Contact(s), 2 Row(s), Female, Straight, 0.039 inch Pitch, Surface Mount Terminal, Locking, Black Insulator	Fixed Resistor, Metal Glaze/thick Film, 0.25W, 2320ohm, 200V, 1% +/-Tol, -50,50ppm/Cel, 1206,
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	105 °C	155 °C
最低工作温度	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-40 °C	-55 °C
是否Rohs认证	符合	符合	符合	符合	符合	符合	-	符合
包装说明	HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2	HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2	O-LALF-W2	O-LALF-W2	HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2	HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2	-	-
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	-	-
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-	-
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	-	-
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	-	-
JEDEC-95代码	DO-35	DO-35	DO-35	DO-35	DO-35	DO-35	-	-
JESD-30 代码	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	-	-
元件数量	1	1	1	1	1	1	-	-
端子数量	2	2	2	2	2	2	-	2
最大输出电流	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A	-	-
封装主体材料	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	-	-
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	-	-
封装形式	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	-	SMT
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-
最大功率耗散	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W	-	-
最大重复峰值反向电压	100 V	100 V	100 V	100 V	100 V	100 V	-	-
最大反向恢复时间	0.004 µs	0.004 µs	0.004 µs	0.004 µs	0.004 µs	0.004 µs	-	-
表面贴装	NO	NO	NO	NO	NO	NO	-	-
端子形式	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	-	-
端子位置	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	-	-
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-
Base Number Matches	1	1	1	1	1	1	-	-
JESD-609代码	-	e3	e3	e3	-	e3	-	e3
端子面层	-	Tin (Sn)	Tin (Sn)	Tin (Sn)	-	Tin (Sn)	-	Tin (Sn) - with Nickel (Ni) barrier

1N914BA0G

1N914BA0G概述

1N914BA0G规格参数

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