RVF
FAST RECOVERY - HIGH VOLTAGE
HIGH CURRENT SILICON RECTIFIERS
MATCHED SILICON RECTIFIER ELEMENTS
DIFFUSED SILICON JUNCTIONS
PRV 5,000 TO 40,000 VOLTS
AVALANCHE CHARACTERISTICS
LOW LEAKAGE
EDI Type No.
Peak
Reverse Voltage
PRV (V olts)
5,000
8,000
10,000
12,500
15,000
20,000
25,000
30,000
40,000
Average Rectified
Current
@55
o
C@100
o
C
Amps
0.50
0.50
0.50
0.50
0.50
0.40
0.40
0.40
0.40
0.33
0.33
0.33
0.33
0.33
0.27
0.27
0.27
0.27
Max. Fwd Voltage
@25 C
I
F
=0.5 ADC
(Volts)
9
12
15
20
23
30
38
45
60
o
Length L
Fig.3
Inches
MM
1.25
1.75
2.00
2.50
3.00
4.00
4.50
5.50
7.00
31.75
44.45
50.80
63.50
76.20
101.60
114.30
139.70
177.80
RVF5
RVF8
RVF10
RVF12.5
RVF15
RVF20
RVF25
RVF30
RVF40
ELECTRICAL CHARACTERISTICS(at T
A
=25 C Unless Otherwise Specified)
Max. DC Reverse Current @ PRV and 25 C, I
R
Max. DC Reverse Current @ PRV and 100 C, I
R
Ambient Operating Temperature Range,T
A
o
o
0.1
A
15
A
-55
o
C to +150
o
C
-55
o
C to +150
o
C
50
Amps
2
Amps
150 nanoseconds
Storage Temperature Range, T
STG
Max.One-Half Cycle Surge Current, I
FM
(Surge )@ 60Hz
Forward Voltage Repetitive Peak,I
FRM
Max. Reverse Recovery Time , T
rr
(Fig.4)
EDI reserves the right to change these specifications at any time without notice.
RVF
FIG.1
OUTPUT CURRENT vs AMBIENT TEMPERATURE
600
FIG.2
NON-REPETITIVE SURGE CURRENT RATINGS
0.1SEC
100
1.0SEC
AVG. RECTIFIED D.C. CURRENT
MILLAMPERES
500
400
300
% MAXIMUM SURGE
RVF 5-15
75
50
200
RVF 20-40
25
100
0
25
50
75
100
125
O
0
150
175
1
2
3
4
5
6
7 8 9 10
20
30
40 50 60
AMBIENT TEMP
( C )
CYCLES(60 Hz)
FIG.3
PACKAGE STYLE
A
E
LTR
A
B
INCHES
.051 DIA.
+ .03
_
2.0 MIN.
0.31 MAX.
0.76 MAX.
MILLIMETERS
1.30 DIA.
+ .76
_
50.8 MIN.
7.9 MAX.
19.30 MAX.
_
L +
B
C
D
C
D
E
It is recommended that a proper heat sink be used on the terminals of this device between the body and the soldering point to
prevent damage form excess heat.
FIG.4
TEST CIRCUIT
TYPICAL REVERSE RECOVERY WAVEFORM
+
T RR
R1
50 OHM
D.U.T.
PULSE
GENERATOR
R2
1 OHM
SCOPE
-
ZERO
0.5A
REFERENCE
1.0A
0.25A
R1, R2 NON-INDUCTIVE RESISTORS
PULSE GENERATOR - HEWLETT
PACKARD 214A OR EQUIV.
IKC REP.RA
TE, 10 SEC. PULSE WIDTH
ADJUST PULSE AMPLITUDE FOR PEAK IR
Prior to the manufacture of these assemblies, the individual silicon junction is measured for
maximum recovery time in the test circuit shown.
ELECTRONIC DEVICES, INC.
DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951.
21 GRAY OAKS AVENUE
* YONKERS. NEW YORK 10710 914-965-4400
* FAX 914-965-5531
* 1-800-678-0828
Ee-mail:sales@edidiodes.com
*
Wwebsite:
http://www.edidiodes.com
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