Rev. 1.0
64K X 16 BIT LOW POWER CMOS SRAM
With Error-Correcting Code (ECC)
LY69L6416A
REVISION HISTORY
Revision
Rev. 1.0
Description
Initial Issue
Issue Date
Mar.19.2020
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
Rev. 1.0
64K X 16 BIT LOW POWER CMOS SRAM
With Error-Correcting Code (ECC)
GENERAL DESCRIPTION
The LY69L6416A is a 1,048,576-bit low power
CMOS static random access memory organized as
65,536 words by 16 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The LY69L6416A embeds error-correcting code
(ECC) which can correct single-bit error per byte. It
is well designed for low power application, and
particularly well suited for battery back-up
nonvolatile memory application.
The LY69L6416A operates from a single power
supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible.
LY69L6416A
FEATURES
Fast access time : 45/55ns
Low power consumption:
Operating current : 12/10mA (TYP.)
Standby current : 1A (TYP.)
Single 2.7V ~ 3.6V power supply
ECC : 1-bit error correction per byte
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 1.5V (MIN.)
Green package available
Package : 44-pin 400mil TSOP II
48-ball 6mm*8mm TFBGA
PRODUCT FAMILY
Product
Family
LY69L6416A
LY69L6416A(I)
Operating
Temperature
0 ~ 70℃
-40 ~ 85℃
V
CC
Range
2.7 ~ 3.6V
2.7 ~ 3.6V
Speed
45/55ns
45/55ns
Power Dissipation
Standby(I
SB1
,
TYP.) Operating(I
CC
,TYP.)
1µA
12/10mA
1µA
12/10mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
A0 - A15
CE#
WE#
OE#
LB#
UB#
V
CC
V
SS
DESCRIPTION
Address Inputs
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Ground
DQ0 – DQ15 Data Inputs/Outputs
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
Rev. 1.0
64K X 16 BIT LOW POWER CMOS SRAM
With Error-Correcting Code (ECC)
LY69L6416A
PIN CONFIGURATION
A4
A3
A2
A1
A0
CE#
DQ0
DQ1
DQ2
DQ3
Vcc
Vss
DQ4
DQ5
DQ6
DQ7
WE#
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
44
43
42
41
40
39
38
A5
A6
A7
OE#
UB#
LB#
DQ15
DQ14
DQ13
DQ12
Vss
Vcc
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
LY69L6416A
XXXXXXXX
XXXXXXXX
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
TSOP II
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
Rev. 1.0
64K X 16 BIT LOW POWER CMOS SRAM
With Error-Correcting Code (ECC)
LY69L6416A
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 4.6
-0.5 to V
CC
+0.5
0 to 70(C grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
H
X
L
L
L
L
L
L
L
L
OE#
X
X
H
H
L
L
L
X
X
X
WE# LB#
X
X
H
H
H
H
H
L
L
L
X
H
L
X
L
H
L
L
H
L
UB#
X
H
X
L
H
L
L
H
L
L
I/O OPERATION
DQ0-DQ7
DQ8-DQ15
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
D
OUT
High – Z
D
OUT
High – Z
D
OUT
D
OUT
D
IN
High – Z
D
IN
High – Z
D
IN
D
IN
SUPPLY CURRENT
I
SB1
I
CC
,I
CC1
I
CC
,I
CC1
I
CC
,I
CC1
H = V
IH
, L = V
IL
, X = Don't care.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
Rev. 1.0
64K X 16 BIT LOW POWER CMOS SRAM
With Error-Correcting Code (ECC)
LY69L6416A
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
SYMBOL
V
CC
V
IH*1
V
IL*2
I
LI
I
LO
V
OH
V
OL
I
CC
Average Operating
Power supply Current
I
CC1
TEST CONDITION
MIN.
2.7
2.2
- 0.2
-1
-1
2.2
-
-
-
-
-
-
-
-
TYP.
*4
3.0
-
-
-
-
2.7
-
12
10
3
1
1
1
1
MAX.
3.6
V
CC
+0.3
0.6
1
1
-
0.4
20
17
5
3
3
10
15
UNIT
V
V
V
µA
µA
V
V
mA
mA
mA
µA
µA
µA
µA
V
CC
≧
V
IN
≧
V
SS
V
CC
≧
V
OUT
≧
V
SS
,
Output Disabled
I
OH
= -1mA
I
OL
= 2mA
Cycle time = Min.
-45
CE#
≦
0.2V, I
I/O
= 0mA
Others at 0.2V or V
CC
-0.2V -55
Cycle time = 1µs
CE# = 0.2V , I
I/O
= 0mA
Other pins at 0.2V or V
CC
- 0.2V
SL
*5
25
℃
CE#
≧
V
CC
- 0.2V
SLI
*5
40
℃
Others at 0.2V or
SL
V
CC
- 0.2V
SLI
Standby Power
Supply Current
I
SB1
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical values are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
5. This parameter is measured at V
CC
= 3.0V
CAPACITANCE
(T
A
= 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
6
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to V
CC
- 0.2V
3ns
1.5V
C
L
= 30pF + 1TTL, I
OH
/I
OL
= -1mA/2mA
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
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