RF68863.6V,
100MHz to
1000 MHz Lin-
ear Power
Amplifier
RF6886
3.6V, 100MHz TO 1000MHz LINEAR POWER
AMPLIFIER
Package: QFN, 24-Pin, 4mmx4mm
Pwr Ref
VBias
NC
24
23
22
21
NC
20
Features
Vreg1
19
Vcc
Vcc
Vcc
NC
Vreg2
RFin
1
18
100MHz to 1000MHz
Single 3.6V Power Supply
34dBm OP1dB
36.5dBm Saturated Output
Power
>50% Efficiency
Bias
2
17
RFout
RFout
RFout
RFout
RFout
RFout
3
16
4
15
5
14
6
13
Applications
CDMA/GSM/EDGE Repeater
Final Amplifier
450MHz and 865MHz to
955MHz ISM Band Amplifier
General Purpose High Power
Amplifier
TETRA Handheld/Walkie-Talkie
Final Amplifier
HPA Driver
7
8
9
10
11
12
NC
NC
NC
NC
NC
NC
Functional Block Diagram
Product Description
The RF6886 is a linear, high power, high efficiency amplifier designed to use as a
final stage/driver in linear or saturated transmit applications. The device is manu-
factured on an advanced InGaP HBT process and is provided in a 24-pin leadless
chip carrier with backside ground. External matching allows for use in standard
bands from 100MHz to 1000MHz.
Ordering Information
RF6886SR
RF6886SQ
RF6886TR7
RF6886TR13
RF6886PCK-410
RF6886PCK-411
7” Reel with 100 pieces
Sample bag with 25 pieces
7” Reel with 750 pieces
13” Reel with 2500 pieces
865MHz to 955MHz PCBA with 5-piece sample bag
433MHz to 470MHz PCBA with 5-piece sample bag
Optimum Technology Matching® Applied
DS140303
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 16
RF6886
Absolute Maximum Ratings
Parameter
VC2 Collector Quiescent Bias
Current (I
CQ2
)
VC1 Collector Quiescent Bias
Current (I
CQ1
)
Maximum Supply Current
(I
CC1
+I
CC2
)
Device Voltage (V
D
)
Power Dissipation
Operating Lead Temperature
(T
AMBIENT
)
Max RF Input 50 Output Load
Max RF Output 50 Load
Output Load VSWR
Storage Temperature Range
Operating Junction Temperature
(T
J
)
ESD Rating - Human Body Model
(HBM)
Moisture Sensitivity Level (MSL)
Rating
350
150
3100
4.0
5
-40 to +85
12
38
See Theory of Operation Sec-
tion
-40 to +150
150
Class 1A
MSL1
Unit
mA
mA
mA
V
W
°C
dBm
dBm
°C
°C
V
Parameter
Typical Electrical Specifications
for 433MHz to 470MHz
Operating Frequency
OP1dB
Small SIgnal Gain
Saturated Output Power (P
SAT
)
Saturated Efficiency
Saturated Output Power (P
SAT
)
Saturated Efficiency
Saturated Output Power (P
SAT
)
Saturated Efficiency
TETRA ADJ Channel Power
TETRA ALT Channel Power
CDMA ADJ Channel Power
CDMA ALT Channel Power
Specification
Min.
Typ.
Max.
Unit
Condition
See 433MHz to 470MHz Evaluation Board Schematic
433
450
34.5
33
36.8
55
36.3
54.5
35.2
53
-38
-53
-50
-67
470
MHz
dBm
dB
dBm
%
dBm
%
dBm
%
dBc
dBc
dBc
dBc
V
CC
=3.6V, V
REG1
=V
REG2
=3.1V, I
CQ
total=390mA
V
CC
=3.3V, V
REG1
=V
REG2
=3.1V, I
CQ
total=380mA
V
CC
=3.0V, V
REG1
=V
REG2
=3.1V, I
CQ
total=370mA
V
CC
=3.6V, V
REG1
=V
REG2
=2.7V, I
CQ
total=187mA
TETRA: PAR=2.6dB, P
OUT
=32dBm, 24.3kHz channel BW,
ADJ offset=25kHz, ALT offset=50kHz
CDMA: PAR=4.5dB, P
OUT
=32dBm, 1.23MHz channel BW,
ADJ CH offset/BW=750kHz/30kHz, ALT CH
offset/BW=1.98MHz/30kHz
2 of 16
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS140303
RF6886
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
See 865MHz to 955MHz Evaluation Board Schematic.
T
A
=25 °C
Operating Frequency
OP1dB
Small Signal Gain
Saturated Output Power (P
SAT
)
Saturated Efficiency
Saturated Output Power (P
SAT
)
Saturated Efficiency
Saturated Output Power (P
SAT
)
Saturated Efficiency
CDMA ADJ Channel Power
CDMA ALT Channel Power
50
29
865
900
33.5
31.0
36.2
54
35.5
53.5
34.4
52.5
-52
-66
33.5
955
MHz
dBm
dB
dBm
%
dBm
%
dBm
%
dBc
dBc
CDMA: PAR=4.5dB, P
OUT
=31.5dBm, 1.23MHz channel
BW, ADJ CH offset/BW=750kHz/30kHz, ALT CH
offset/BW=1.98MHz/30kHz
Frequency = 900MHz
V
CC
=3.6V, V
REG1
=V
REG2
=3.1V, I
CQ
total=390mA
V
CC
=3.3V, V
REG1
=V
REG2
=3.1V I
CQ
total=380mA
V
CC
=3.0V, V
REG1
=V
REG2
=3.1V I
CQ
total=370mA
Quiescent Current (I
CQ
)
Leakage Current
Current at V
REG1
and V
REG2
(I
REG1
and I
REG2
)
Thermal Resistance, R
TH
340
390
5
3
11
420
10
mA
uA
mA
°C/W
V
CC
=3.6V, V
REG1
=V
REG2
=3.1V
V
CC
=3.6V, V
REG1
=V
REG2
=0V
V
CC
=3.6V, V
REG1
=V
REG2
=3.1V. V
REG1/2
supplied through
220 bias resistance (see evaluation board schematic).
DS140303
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 16
RF6886
Pin
1, 2, 3
Function
VCC1
Description
Inter-stage match and bias for first stage output. Connect inter-stage
matching capacitor to pin with a short trace. Connect low frequency
bypass capacitor to this pin with a long trace. See evaluation board lay-
out for detail.
This pin requires a regulated supply to set output stage DC bias.
RF Input. An external blocking capacitor is required if this pin is con-
nected to DC path.
VCC
Interface Schematic
5
6
VREG2
RF IN
Bond Wire
Inductance
RF IN
BIAS
4,
7-12,
20, 21
13, 14,
15, 16,
17, 18
19
22
23
NC
No Connect.
RF OUT
RF Output and bias for the output stage. The power supply for the out-
put transistor needs to be supplied to this pin. This can be done
through an RF inductor that supports the required DC currents.
BIAS
RF OUT
VREG1
VCC BIAS
PWR SENSE
This pin requires a regulated supply to set driver stage DC bias.
Bias circuitry supply voltage.
PWR SEN and PWR REF pins can be used in conjunction with an exter-
nal feedback path to provide an RF power control function for the
RF6886. The power control function is based on sampling the RF drive
to the final stage of the RF6886.
RF OUT
PWR SEN
PWR REF
BIAS
24
Pkg
Base
PWR REF
GND
Same as pin 23.
Ground connection. The backside of the package should be connected
to the ground plane through a short path, i.e., vias under the device are
required.
4 of 16
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS140303
RF6886
Theory of Operation
This section provides specific guidelines for operation of RF6886.
Applications can generally be placed into two categories:
1. High power applications
• Output power ranging between 34.5 - 36.5dBm
• Efficiency >50% in band of interest
2. Linear applications
• RF6886 shows linearity along the lines of a handset power amplifier in terms of adjacent channel power (ACP)
performance, with the distinct advantage of obtaining ACP compliance at >2x comparative output power. Resultant
output power for linear operation will depend on the waveform being considered.
All pertinent specifications and performance curves are seen in the tabular and graph sections of the data sheet. The first
standard evaluation board has been matched for 865MHz to 955MHz. Operation with V
CC
=3.6V shows output power >36dBm
and efficiency >50%. For reduced power ranges, efficiency is maintained, with no change to output match, by lowering V
CC
. See
data for 3.3/3.0V in the tables provided. The standard evaluation board also demonstrates impressive linearity, shown with
conventional CDMA modulation.
The same data set format is also provided for the 433MHz to 470MHz evaluation board. Nominal data is taken with V
CC
=3.6V
and V
REG1
/2=3.1V. For linear operation, it has been shown that reducing V
REG1
/2 to 2.7 - 2.8V enhances performance. This
can be explained by observing how the compression characteristic behaves. Operation with VREG=3.1V shows gradual (soft)
compression once power exceeds 31dBm. With VREG reduced to 2.7 - 2.8V, small signal gain drops by 1 - 2dB. Self bias is now
more prominent at 31dBm, and gain expansion offsets slow compression. The result is flattening of the gain characteristic,
extending effective compression point out in power. Waveform distortion is reduced as compared to the VREG=3.1V case, and
adjacent channel power improves. The sole advantage in using VREG=3.1V would be a slightly higher value for saturated out-
put power.
Low thermal resistance enables reliable high power operation, provided that output load is set to achieve efficiency equal to or
better than that seen on the RFMD evaluation boards.
The maximum rating for output load VSWR on page 2 calls out requirement for discussion in this section. RF6886 has shown
excellent performance into 50, but any system using it as a final amplifier will have to take VSWR variation into account. Test
on properly matched evaluation board has shown that rated output power is obtained with 10dBm at RF input. Practically
speaking then, at or near 10dBm would be a maximum reasonable limit for input power. When considering VSWR variation,
ruggedness is one of the main considerations. Ruggedness here, being the worse case VSWR which can be tolerated for a tran-
sient period without damage to the device. The following maximum VSWR limits apply:
V
CC
V
3.6
3.3
3
3.6
3.3
3
433 to 470
Freq
MHz
865 to 955
P
OUT
into 50 Load
(Across Band)
dBm
36.2 to 35.2
35.5 to 34.4
34.4 to 33.4
37 to 36.4
36.3 to 35.6
35.2 to 34.5
Maximum Practical
Input Drive
dBm
10
10
8
10
10
8
Maximum Output VSWR
(Survival)
3.5:1
5.0:1
5.0:1
3.5:1
5.0:1
5.0:1
DS140303
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 16
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