MGA-68563
Current-Adjustable, Low Noise Amplifier
Data Sheet
Description
Avago Technologies MGA-68563 is an economical, easy-
to-use GaAs MMIC amplifier that offers excellent linearity
and low noise figure for applications from 0.1 to 1.5 GHz.
Packaged in an miniature SOT-363 package, it requires
half the board space of a SOT-143 package.
One external resistor is used to set the bias current from
5mA to 30mA. This allows the designer to use the same
part in several circuit positions and tailor the linearity
performance (and current consumption) to suit each
position.
The output of the amplifier is matched to 50: (below
2:1 VSWR) across the entire bandwidth and only requires
minimum input matching. The amplifier allows a wide
dynamic range by offering a 1.0 dB NF coupled with a
+20 dBm Output IP3. The circuit uses state-of-the-art
E-pHEMT technology with proven reliability. On-chip bias
circuitry allows operation from a single +3V power sup-
ply, while internal feedback ensures stability (K>1) over
all frequencies for Id at 10mA and above.
Features
x
Single +3V supply
x
High linearity
x
Low noise figure
x
Miniature package
x
Unconditionally stable
Specifications at 500 MHz; 3V, 10 mA (Typ.)
x
1.0 dB noise figure
x
20 dBm OIP3
x
19.7 dB gain
* This represents what Avago Technologies has managed
to achieve on a device level with trade off between
optimal NF, Gain, OIP3 and input return loss.
Applications
x
LNA for DVB-T,DVB-H, T-DMB, ISDB-T, DAB and Media-
FLO
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (CLass 1A)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
Pin Connections and Package Marking
Simplified Schematic
Vd
I
bias
Id = I
ds
+ I
bias
R
bias
GND 1
OUTPUT
6 and V
d
5 GND
4 BIAS
Note:
Package marking
provides orientation
and identification:
“6C” = Device Code
“x” = Date code
indicates the month
of
manufac-
ture.
RFin
Input
match
I
ds
Feedback
4
6
3
Bias
RFout
V
bias
6Cx
Parameter
+
_
GND 2
INPUT 3
1, 2, 5
GND
MGA-68563 Absolute Maximum Ratings
[1]
Symbol
V
d
I
d
P
in
Units
V
mA
dBm
dBm
mA
mW
°C
°C
°C/W
Absolute
Maximum
6
100
21
21
1
600
150
150
97
Device Voltage (pin 6)
[2]
Device Current (pin 6)
[2]
CW RF Input (pin3)
(Vd=3V, Id=10mA)
[3]
(Vd=0V, Id=0mA)
Bias Reference Current (pin 4)
Total Power Dissipation
[4]
Channel Temperature
Storage Temperature
Thermal Resistance
[5]
I
ref
P
diss
T
CH
T
STG
θ
ch_b
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Bias is assumed at DC quiescent conditions.
3. With the DC (typical bias) and RF applied to
the device at board temperature TB = 25°C.
4. Total dissipation power is referred to lead
“5” temperature. Tc=92°C, derate Pdiss at
10.3mW/°C for Tc>92°C.
5. Thermal resistance measured using 150°C
Liquid Crystal Measurement method.
3V
10 nF
Wire Supplying
Vbias from
Agilent 4142
Blocking
Cap
4300
Ω
47 nH
Direct to
Ground
6Cx
68 pF
RF
Input
Direct to
Ground
4
6.8 nH
MGA-68563
RF Output
6
100 pF
3
100 pF
1 2 5
Bias
Bias
Tee
Vdd supply from
Agilent 4142
Reference
Planes
Figure 1a. Test circuit of the 0.5 GHz production test board used for NF, Gain
and OIP3 measurements. This circuit achieves a trade-off between optimal
NF, Gain, OIP3 and input return loss. Circuit losses have been de-embedded
from actual measurements.
Figure 1b. A diagram showing the connection to the DUT during an S and
Noise parameter measurement using an automated tuner system.
2
MGA-68563 Electrical Specifications
T
C
= 25qC, Z
O
= 50:, V
d
= 3V (unless otherwise specified)
Symbol
Parameters and Test Conditions
Id
[1,2]
NF
test [1,2]
G
test [1,2]
OIP3
test [1,2]
Device Current
Noise Figure in test circuit
[1]
Associated Gain in test circuit
[1]
Output 3
rd
Order Intercept in test circuit
[1]
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
Freq
Units
mA
dB
dB
dBm
Min.
Typ.
11
1.0
Max.
16
1.4
21.5
18
18
19.7
20.7
dBm
P1dB
test [1,2]
Output Power at 1dB Gain Compression in test circuit.
[1]
f = 0.5 GHz
17.5
Notes:
1. Guaranteed specifications are 100% tested in the production test circuit, the typical value is based on measurement of at least 600 parts from
two non-consecutive wafer lots during initial characterization of this product.
2. Circuit achieved a trade-off between optimal NF, Gain, OIP3 and input return loss.
LSL
CPK=2.13
USL
LSL
CPK=3.228
6 7 8 9 10 11 12 13 14 15 16 17
Figure 2. Id @ 3V.LSL=7, Nominal=11, USL=16
USL
18
19
20
21
22
Figure 3, OIP3 @ 0.5GHz 3V. LSL=18, Nominal=20.7
LSL
CPK=2.276
USL
CPK=1.62
.7
.8
.9
1
1.1 1.2 1.3 1.4 1.5
18 18.5 19 19.5 20 20.5 21 21.5 22
Figure 5. Gain @ 0.5GHz 3V.USL=18, Nominal=19.7, USL=21.5
Figure 4. NF @ 0.5GHz 3V.USL=1.4, Nominal=1.0
Note:
Measured on the production circuit.
Distribution data sample size is 600 samples taken from 2 non-consecutive wafer lots. Future wafers allocated to this product may have nominal
values anywhere between upper and lower limits.
3
35000
30000
25000
Rbias (ohm)
20000
15000
10000
5000
0
0
2
4
6
8
10
Id (mA)
12
14
16
18
20
3V Supply
5V Supply
Figure 6. Rbias vs Id (3V Supply and 5V Supply)
MGA-68563 Typical Performance, Vd = 3V, Ids (q) = 5mA at 50ohm Input and Output
22
-40°C
85°C
25°C
OIP3 (dBm)
26
24
22
20
P1dB (dBm)
18
16
14
16
12
10
14
0
0.5
1
FREQUENCY (GHz)
1.5
2
8
0
0.5
1
FREQUENCY (GHz)
1.5
2
-40°C
85°C
25°C
20
18
Figure 7. P1dB vs. Frequency (3V,5mA), Ids=5mA during small signal, i.e.
Pin=-20dBm)
Figure 8. OIP3 vs. Frequency (3V 5mA)
18
16
14
GAIN (dB)
NF (dB)
12
10
8
6
0.0
0.5
1.0
FREQUENCY (GHz)
1.5
2.0
-40°C
25°C
85°C
3
2.5
2
1.5
1
0.5
0
0.0
0.5
1.0
FREQUENCY (GHz)
1.5
2.0
-40°C
25°C
85°C
Figure 9. Gain vs. Frequency (3V 5mA)
Figure 10. NF vs. Frequency (3V 5mA)
Notes:
1. Ids taken @ ambient temperature of 25qC may change with temperature variation.
2. Bias current (Ids) for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive.
4
MGA-68563 Typical Performance, Vd = 3V, Ids (q) = 10mA at 50ohm Input and Output
22
-40°C
85°C
25°C
26
24
22
20
P1dB (dBm)
OIP3 (dBm)
18
16
14
16
12
10
14
0
0.5
1
FREQUENCY (GHz)
1.5
2
8
0
0.5
1
FREQUENCY (GHz)
1.5
2
18
-40°C
85°C
25°C
20
Figure 11. P1dB vs. Frequency (3V,10mA), Ids=10mA during small signal,
i.e. Pin=-20dBm)
22
20
18
16
GAIN (dB)
14
12
-40°C
25°C
85°C
Figure 12. OIP3 vs. Frequency (3V 10mA)
3
-40°C
25°C
85°C
2.5
2
NF (dB)
1.5
1
10
8
6
0.0
0.5
1.0
FREQUENCY (GHz)
1.5
2.0
0.5
0
0.0
0.5
1.0
FREQUENCY (GHz)
1.5
2.0
Figure 13. Gain vs. Frequency (3V 10mA)
Figure 14. NF vs. Frequency (3V 10mA)
Notes:
1. Ids taken @ ambient temperature of 25qC may change with temperature variation.
2. Bias current (Ids) for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive.
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
