Ordering number : ENN8243
2SK3826
2SK3826
Features
•
•
•
•
•
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance.
4V drive.
Ultrahigh-speed switching.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10µs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
100
±20
26
104
1.75
45
150
--55 to +150
80
26
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Note :
*1
VDD=20V, L=200µH, IAV=26A
*2
L≤200µH, Single pulse
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Conditions
ID=1mA, VGS=0
VDS=100V, VGS=0
VGS=
±16V,
VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=13A
ID=13A, VGS=10V
ID=13A, VGS=4V
Ratings
min
100
1
±10
1.2
11
19
46
57
60
80
2.6
typ
max
Unit
V
µ
A
µ
A
V
S
mΩ
mΩ
Marking : K3826
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31005QA TS IM TB-00001201 No.8243-1/4
2SK3826
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=50V, VGS=10V, ID=26A
VDS=50V, VGS=10V, ID=26A
VDS=50V, VGS=10V, ID=26A
IS=26A, VGS=0
Ratings
min
typ
2150
160
110
20
34
185
62
42
7.2
9.2
1.0
1.2
max
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Package Dimensions
unit : mm
2052C
10.2
3.6
5.1
4.5
1.3
18.0
5.6
1.2
0.8
1 2 3
14.0
15.1
2.7
6.3
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220
2.55
2.55
Switching Time Test Circuit
VIN
10V
0V
VIN
ID=13A
RL=3.85Ω
VDD=50V
2.7
Avalanche Resistance Test Circuit
L
≥50Ω
D
PW=10µs
D.C.≤1%
VOUT
2SK3826
G
10V
0V
2SK3826
50Ω
VDD
P.G
50Ω
S
No.8243-2/4
2SK3826
50
ID -- VDS
Tc=25°C
50
ID -- VGS
Tc=
--25
°
25
°
C
C
5
°
C
1.5
2.0
45
40
8V
V
10
6V
Drain Current, ID -- A
4V
45
40
35
30
25
20
15
10
5
0
Drain Current, ID -- A
35
30
25
20
15
10
5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0.5
1.0
25
°
C
VGS=3V
2.5
Tc=
7
3.0
--25
°
C
3.5
4.0
4.5
75
°
C
5.0
IT08869
125
150
IT08871
VDS=10V
Drain-to-Source Voltage, VDS -- V
120
IT08868
130
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
ID=13A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
110
100
90
80
70
60
50
40
120
110
100
90
80
70
60
50
40
30
20
10
Tc=75°C
=
ID
A
13
,V
V
=4
S
G
25°C
--25°C
13A
I D=
=10
GS
,V
V
30
20
2
3
4
5
6
7
8
9
10
IT08870
0
--50
--25
0
25
50
75
100
Gate-to-Source Voltage, VGS -- V
7
y
fs -- ID
Case Temperature, Tc --
°
C
100
7
5
3
2
IF -- VSD
VGS=0
Forward Transfer Admittance,
y
fs -- S
5
3
VDS=10V
Forward Current, IF -- A
2
10
7
5
3
2
1.0
7
5
3
0.1
2
3
5
7 1.0
2
=
Tc
--2
°
C
25
5
°
C
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.3
75
°
C
3
5
7 10
2
3
5
7
Tc=75
°
C
25
°
C
--25
°
C
0.6
0.9
1.2
1.5
IT08873
Drain Current, ID -- A
5
3
IT08872
5
Diode Forward Voltage, VSD -- V
SW Time -- ID
td(off)
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
VDD=50V
VGS=10V
Ciss, Coss, Crss -- pF
3
2
Switching Time, SW Time -- ns
2
100
7
5
3
2
1000
7
5
3
2
tf
td(on)
tr
Coss
Crss
100
10
7
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
7
5
0
5
10
15
20
25
30
IT08875
Drain Current, ID -- A
IT08874
Drain-to-Source Voltage, VDS -- V
No.8243-3/4
2SK3826
10
9
VGS -- Qg
VDS=50V
ID=26A
Drain Current, ID -- A
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
ASO
IDP=104A
ID=26A
DC
Gate-to-Source Voltage, VGS -- V
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
40
45
10
op
era
m
0m
s
s
n
10
<10µs
10
µ
s
10
0
µ
s
1m
s
Operation in
this area is
limited by RDS(on).
tio
0.1
0.1
Tc=25°C
Single pulse
2
3
5 7 1.0
2
3
5 7 10
2
3
Total Gate Charge, Qg -- nC
2.0
IT08876
60
PD -- Ta
Allowable Power Dissipation, PD -- W
Drain-to-Source Voltage, VDS --
5 7 100
2
IT08877
V
PD -- Tc
Allowable Power Dissipation, PD -- W
1.75
1.5
50
45
40
1.0
30
20
0.5
10
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT08843
Case Temperature, Tc --
°C
IT08845
Note on usage : Since the 2SK3826 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2005. Specifications and information herein are subject
to change without notice.
PS No.8243-4/4
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