MIG200Q2CSB1X
MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>
MIG200Q2CSB1X
(1200V/200A 2in1)
High Power Switching Applications
Motor Control Applications
•
•
•
•
•
Integrates inverter power circuits and control circuits (IGBT drive units, protection units for short-circuit
current, over current, under voltage and over temperature) in one package.
The electrodes are isolated from case.
V
CE (sat)
= 2.2 V (typ.)
UL recognized File No. E87989
Weight: 278 g (typ.)
Equivalent Circuit
1
2
3
4
5
6
7
8
FO GND IN V
D
FO GND IN V
D
GND
V
S
OUT
GND
V
S
OUT
E2
C2/E1
C1
1.
5.
FO (L)
FO (H)
2.
6.
GND (L)
GND (H)
3.
7.
IN (L)
IN (H)
4.
8.
V
D
(L)
V
D
(H)
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MIG200Q2CSB1X
Package Dimensions
Unit: mm
1.
7.
FO (L)
IN (H)
2.
8.
GND (L)
V
D
(H)
3.
IN (L)
4.
V
D
(L)
5.
FO (H)
6.
GND (H)
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MIG200Q2CSB1X
Signal Terminal Layout
Unit: mm
1.
7.
FO (L)
IN (H)
2.
8.
GND (L)
V
D
(H)
3.
IN (L)
4.
V
D
(L)
5.
FO (H)
6.
GND (H)
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MIG200Q2CSB1X
Maximum Ratings
(T
j
=
25°C)
Stage
Characteristic
Supply voltage
Collector-emitter voltage
Inverter
Collector current
Forward current
Collector power dissipation
Junction temperature
Control supply voltage
Input voltage
Control
Fault output voltage
Fault output current
Operating temperature
Storage temperature range
Module
Isolation voltage
Screw torque (terminal/mounting)
AC 1 minute
M5
FO-GND (L) terminal
FO sink current
⎯
⎯
Tc
=
25°C, DC
Tc
=
25°C, DC
Tc
=
25°C
⎯
V
D
-GND terminal
IN-GND terminal
Condition
P-N power terminal
⎯
Symbol
V
CC
V
CES
I
C
I
F
P
C
T
j
V
D
V
IN
V
FO
I
FO
Tc
T
stg
V
ISO
⎯
Ratings
900
1200
200
200
2010
150
20
20
20
14
−20~+100
−40~+125
2500
3
Unit
V
V
A
A
W
°C
V
V
V
mA
°C
°C
V
N·m
Electrical Characteristics
1. Inverter Stage
Characteristic
Collector cut-off current
Symbol
I
CEX
Test Condition
V
CE
=
1200 V
V
D
=
15 V,
I
C
=
200 A,
V
IN
=
15 V
→
0 V
T
j
=
25°C
T
j
=
125°C
T
j
=
25°C
T
j
=
125°C
Min
⎯
⎯
⎯
⎯
⎯
⎯
V
CC
=
600 V, I
C
=
200 A,
V
D
=
15 V, V
IN
=
15 V
↔
0 V,
T
j
=
25°C, Inductive load
(Note 1)
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
2.2
⎯
2.4
2.0
0.3
0.3
1.5
0.3
Max
1
10
2.6
V
3.0
2.8
3.0
⎯
⎯
2.5
⎯
µs
V
Unit
mA
Collector-emitter saturation voltage
Forward voltage
V
CE (sat)
V
F
t
on
t
c (on)
I
F
=
200 A, T
j
=
25°C
Switching time
t
rr
t
off
t
c (off)
Note 1: Switching time test circuit and timing chart.
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MIG200Q2CSB1X
2. Control Stage
(T
j
=
25°C)
Characteristic
Control circuit current
Input-on signal voltage
Input-off signal voltage
Protection
Fault output current
Normal
Over current protection trip level
Short-circuit current protection trip level
Over current cut-off time
Over temperature
protection
Control supply under
voltage protection
Fault output pulse width
Trip level
Reset level
Trip level
Reset level
High side
Low side
Symbol
I
D (H)
I
D (L)
V
IN (on)
V
IN (off)
I
FO (on)
I
FO (off)
OC
SC
t
off (OC)
OT
Case temperature
OTr
UV
UVr
t
FO
V
D
=
15 V
⎯
V
D
=
15 V
V
D
=
15 V
V
D
=
15 V
V
D
=
15 V
V
D
=
15 V, T
j
<
125°C
=
V
D
=
15 V, T
j
<
125°C
=
V
D
=
15 V
Test Condition
Min
⎯
⎯
1.4
2.2
8
⎯
320
320
⎯
110
⎯
11.0
12.0
1
Typ.
13
13
1.6
2.5
10
⎯
⎯
⎯
5
118
98
12.0
12.5
2
Max
17
17
1.8
2.8
12
mA
0.1
⎯
⎯
⎯
125
⎯
12.5
V
13.0
3
ms
°C
A
A
µs
V
V
Unit
mA
3. Thermal Resistance
(Tc
=
25°C)
Characteristic
Junction to case thermal resistance
Case to fin thermal resistance
Symbol
R
th (j-c)
R
th (c-f)
IGBT
FRD
Compound is applied
Test Condition
Min
⎯
⎯
⎯
Typ.
⎯
⎯
0.017
Max
0.062
0.136
⎯
°C/W
Unit
°C/W
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