MIG300Q2CMB1X
MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>
MIG300Q2CMB1X
(1200V/300A 2in1)
High Power Switching Applications
Motor Control Applications
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Integrates inverter power circuits and control circuits (IGBT drive unit, units for protection against short-circuit
current, overcurrent, undervoltage and overtemperature) into a single package.
The electrodes are isolated from the case.
Low thermal resistance
V
CE (sat)
= 2.4 V (typ.)
UL recognized: File No.E87989
Weight: 380 g (typ.)
Equivalent Circuit
1
2
3
4
5
6
7
8
FO GND IN V
D
FO GND IN V
D
GND V
S
OUT
GND V
S
OUT
E2
C2/E1
1.
5.
FO (L)
FO (H)
2.
6.
GND (L)
GND (H)
3.
7.
IN (L)
IN (H)
C1
4.
8.
V
D
(L)
V
D
(H)
2004-10-01
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MIG300Q2CMB1X
Package Dimensions
Unit: mm
1.
5.
FO (L)
FO (H)
2.
6.
GND (L)
GND (H)
3.
7.
IN (L)
IN (H)
4.
8.
V
D
(L)
V
D
(H)
2004-10-01
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MIG300Q2CMB1X
Signal Terminal Layout
Unit: mm
1.
5.
FO (L)
FO (H)
2.
6.
GND (L)
GND (H)
3.
7.
IN (L)
IN (H)
4.
8.
V
D
(L)
V
D
(H)
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MIG300Q2CMB1X
Maximum Ratings
(T
j
=
25°C)
Stage
Supply voltage
Collector-emitter voltage
Inverter
Collector current
Forward current
Collector power dissipation
Junction temperature
Control supply voltage
Control
Input voltage
Fault output voltage
Fault output current
Operating temperature
Storage temperature
Module
Isolation voltage
Screw torque (terminal)
Screw torque (mounting)
AC 1 min
M6
M5
Tc
=
25°C, DC
Tc
=
25°C, DC
Tc
=
25°C
⎯
V
D
-GND terminal
IN-GND terminal
FO-GND terminal
FO sink current
Characteristics
Condition
P-N power terminal
⎯
Symbol
V
CC
V
CES
I
C
I
F
P
C
T
j
V
D
V
IN
V
FO
I
FO
Rating
900
1200
300
300
2840
150
20
20
20
10
−20~+100
−40~+125
2500
3
3
Unit
V
V
A
A
W
°C
V
V
V
mA
°C
°C
V
N½m
N½m
⎯
⎯
Tc
T
stg
V
ISO
⎯
⎯
Electrical Characteristics
1. Inverter stage
Characteristics
Collector cut-off current
Symbol
I
CEX
Test Condition
V
CE
=
1200 V
V
D
=
15 V
I
C
=
300 A
V
IN
=
15 V
→
0 V
T
j
=
25°C
T
j
=
125°C
T
j
=
25°C
T
j
=
125°C
Min
⎯
⎯
⎯
⎯
⎯
⎯
V
CC
=
600 V, I
C
=
300 A
V
D
=
15 V, V
IN
=
15 V
↔
0 V
T
j
=
25°C, Inductive load
(Note 1)
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
2.4
2.8
2.2
2.0
0.5
0.3
1.6
0.3
Max
1
10
2.8
⎯
2.6
3.0
⎯
⎯
2.5
⎯
µs
V
V
Unit
mA
Collector-emitter saturation voltage
Forward voltage
V
CE (sat)
V
F
t
on
t
c (on)
I
F
=
300 A, T
j
=
25°C
Switching time
t
rr
t
off
t
c (off)
Note 1: Switching time test circuit & timing chart
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MIG300Q2CMB1X
2. Control stage
(T
j
=
25°C)
Characteristics
Control circuit current
Input on signal voltage
Input off signal voltage
Protection
Fault output current
Normal
Overcurrent protection trip level
Short-circuit protection trip level
Overcurrent cut-off time
Overtemperature
protection
Control supply under
voltage protection
Fault output pulse width
Trip level
Reset level
Trip level
Reset level
High side
Low side
Symbol
I
D (H)
I
D (L)
V
IN (on)
V
IN (off)
I
FO (on)
I
FO (off)
OC
SC
t
off (OC)
OT
OTr
UV
UVr
t
FO
V
D
=
15 V
⎯
V
D
=
15 V
Test Condition
Min
⎯
⎯
1.4
2.2
8
⎯
480
480
⎯
110
⎯
11.0
12.0
1
Typ.
13
13
1.6
2.5
10
⎯
⎯
⎯
5
118
98
12.0
12.5
2
Max
17
17
1.8
2.8
12
mA
0.1
⎯
⎯
⎯
125
⎯
12.5
13.0
3
ms
A
A
µs
°C
V
Unit
mA
V
D
=
15 V
V
D
=
15 V
V
D
=
15 V, T
j
<
125°C
=
V
D
=
15 V, T
j
<
125°C
=
V
D
=
15 V
Case temperature
V
3. Thermal resistance
(Tc
=
25°C)
Characteristics
Junction to case thermal resistance
Case to fin thermal resistance
Symbol
R
th (j-c)
R
th (c-f)
IGBT
FRD
Compound is applied
Test Condition
Min
⎯
⎯
⎯
Typ.
⎯
⎯
0.013
Max
0.044
0.068
⎯
°C/W
Unit
°C/W
2004-10-01
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