74AUP1G125
Low-power buffer/line driver; 3-state
Rev. 02 — 30 June 2006
Product data sheet
1. General description
The 74AUP1G125 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families. Schmitt-trigger action at all
inputs makes the circuit tolerant to slower input rise and fall times across the entire
V
CC
range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power
consumption across the entire V
CC
range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using I
OFF
.
The I
OFF
circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
The 74AUP1G125 provides the single non-inverting buffer/line driver with 3-state output.
The 3-state output is controlled by the output enable input (OE).
A HIGH level at pin OE causes the output to assume a high-impedance OFF-state. This
device has the input-disable feature, which allows floating input signals. The inputs are
disabled when OE is HIGH.
2. Features
I
Wide supply voltage range from 0.8 V to 3.6 V
I
High noise immunity
I
Complies with JEDEC standards:
N
JESD8-12 (0.8 V to 1.3 V)
N
JESD8-11 (0.9 V to 1.65 V)
N
JESD8-7 (1.2 V to 1.95 V)
N
JESD8-5 (1.8 V to 2.7 V)
N
JESD8-B (2.7 V to 3.6 V)
I
ESD protection:
N
HBM JESD22-A114-C Class 3A. Exceeds 5000 V
N
MM JESD22-A115-A exceeds 200 V
N
CDM JESD22-C101-C exceeds 1000 V
I
Low static power consumption; I
CC
= 0.9
µA
(maximum)
I
Latch-up performance exceeds 100 mA per JESD 78 Class II
I
Inputs accept voltages up to 3.6 V
I
Low noise overshoot and undershoot < 10 % of V
CC
I
Input-disable feature allows floating input conditions
I
I
OFF
circuitry provides partial Power-down mode operation
I
Multiple package options
I
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C
Philips Semiconductors
74AUP1G125
Low-power buffer/line driver; 3-state
3. Ordering information
Table 1:
Ordering information
Package
Temperature range Name
74AUP1G125GW
74AUP1G125GM
74AUP1G125GF
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
TSSOP5
XSON6
XSON6
Description
plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
Version
SOT353-1
Type number
plastic extremely thin small outline package; no leads; SOT886
6 terminals; body 1
×
1.45
×
0.5 mm
plastic extremely thin small outline package; no leads; SOT891
6 terminals; body 1
×
1
×
0.5 mm
4. Marking
Table 2:
Marking
Marking code
pM
pM
pM
Type number
74AUP1G125GW
74AUP1G125GM
74AUP1G125GF
5. Functional diagram
2
A
Y
4
2
4
A
Y
1
OE
mna118
1
EN
mna119
OE
001aad068
Fig 1. Logic symbol
Fig 2. IEC logic symbol
Fig 3. Logic diagram
74AUP1G125_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 30 June 2006
2 of 21
Philips Semiconductors
74AUP1G125
Low-power buffer/line driver; 3-state
6. Pinning information
6.1 Pinning
74AUP1G125
74AUP1G125
OE
A
1
2
GND
GND
3
001aab651
OE
5
V
CC
1
6
V
CC
OE
A
74AUP1G125
1
2
3
6
5
4
V
CC
n.c.
Y
A
2
5
n.c.
3
4
Y
GND
4
Y
001aab652
001aaf014
Transparent top view
Transparent top view
Fig 4. Pin configuration SOT353-1
(TSSOP5)
Fig 5. Pin configuration SOT886
(XSON6)
Fig 6. Pin configuration SOT891
(XSON6)
6.2 Pin description
Table 3:
Symbol
OE
A
GND
Y
n.c.
V
CC
Pin description
Pin
TSSOP5
1
2
3
4
-
5
XSON6
1
2
3
4
5
6
output enable input
data input
ground (0 V)
data output
not connected
supply voltage
Description
7. Functional description
Table 4:
Input
OE
L
L
H
[1]
H = HIGH voltage level;
L = LOW voltage level;
X = Don’t care;
Z = high-impedance OFF-state.
Function table
[1]
Output
A
L
H
X
Y
L
H
Z
74AUP1G125_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 30 June 2006
3 of 21
Philips Semiconductors
74AUP1G125
Low-power buffer/line driver; 3-state
8. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
V
I
I
OK
V
O
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
input voltage
output clamping current
output voltage
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
< 0 V
[1]
Min
−0.5
-
−0.5
-
[1]
[1]
Max
+4.6
−50
+4.6
±50
V
CC
+ 0.5
+4.6
±20
+50
−50
+150
250
Unit
V
mA
V
mA
V
V
mA
mA
mA
°C
mW
V
O
> V
CC
or V
O
< 0 V
Active mode
Power-down mode
V
O
= 0 V to V
CC
−0.5
−0.5
-
-
-
−65
T
amb
=
−40 °C
to +125
°C
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For TSSOP5 packages: above 87.5
°C
the value of P
tot
derates linearly with 4.0 mW/K.
For XSON6 packages: above 45
°C
the value of P
tot
derates linearly with 2.4 mW/K.
9. Recommended operating conditions
Table 6:
Symbol
V
CC
V
I
V
O
T
amb
∆t/∆V
Recommended operating conditions
Parameter
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
V
CC
= 0.8 V to 3.6 V
Active mode
Power-down mode; V
CC
= 0 V
Conditions
Min
0.8
0
0
0
−40
0
Max
3.6
3.6
V
CC
3.6
+125
200
Unit
V
V
V
V
°C
ns/V
74AUP1G125_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 30 June 2006
4 of 21
Philips Semiconductors
74AUP1G125
Low-power buffer/line driver; 3-state
10. Static characteristics
Table 7:
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
= 25
°C
V
IH
HIGH-state input voltage
V
CC
= 0.8 V
V
CC
= 0.9 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
V
IL
LOW-state input voltage
V
CC
= 0.8 V
V
CC
= 0.9 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
V
OH
HIGH-state output voltage
V
I
= V
IH
or V
IL
I
O
=
−20 µA;
V
CC
= 0.8 V to 3.6 V
I
O
=
−1.1
mA; V
CC
= 1.1 V
I
O
=
−1.7
mA; V
CC
= 1.4 V
I
O
=
−1.9
mA; V
CC
= 1.65 V
I
O
=
−2.3
mA; V
CC
= 2.3 V
I
O
=
−3.1
mA; V
CC
= 2.3 V
I
O
=
−2.7
mA; V
CC
= 3.0 V
I
O
=
−4.0
mA; V
CC
= 3.0 V
V
OL
LOW-state output voltage
V
I
= V
IH
or V
IL
I
O
= 20
µA;
V
CC
= 0.8 V to 3.6 V
I
O
= 1.1 mA; V
CC
= 1.1 V
I
O
= 1.7 mA; V
CC
= 1.4 V
I
O
= 1.9 mA; V
CC
= 1.65 V
I
O
= 2.3 mA; V
CC
= 2.3 V
I
O
= 3.1 mA; V
CC
= 2.3 V
I
O
= 2.7 mA; V
CC
= 3.0 V
I
O
= 4.0 mA; V
CC
= 3.0 V
I
I
I
OZ
I
OFF
∆I
OFF
I
CC
input leakage current
3-state output OFF-state
current
power-off leakage current
additional power-off
leakage current
supply current
V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V
V
I
= V
IH
or V
IL
; V
O
= 0 V to 3.6 V;
V
CC
= 0 V to 3.6 V
V
I
or V
O
= 0 V to 3.6 V; V
CC
= 0 V
V
I
or V
O
= 0 V to 3.6 V;
V
CC
= 0 V to 0.2 V
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 0.8 V to 3.6 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.3
×
V
CC
0.31
0.31
0.31
0.44
0.31
0.44
±0.1
±0.1
±0.2
±0.2
0.5
V
V
V
V
V
V
V
V
µA
µA
µA
µA
µA
V
CC
−
0.1
1.11
1.32
2.05
1.9
2.72
2.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
0.75
×
V
CC
-
0.70
×
V
CC
-
0.65
×
V
CC
-
1.6
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
Conditions
Min
Typ
Max
Unit
0.30
×
V
CC
V
0.35
×
V
CC
V
0.7
0.9
V
V
74AUP1G125_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 30 June 2006
5 of 21
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