Ordering number : ENN8123
2SA2153
2SA2153
Applications
•
PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Voltage regulators, relay drivers, lamp drivers, electrical equipment.
Features
•
•
•
Adoption of MBIT process.
Low saturation voltage.
High current capacity and wide ASO.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Mounted on a ceramic board (450mm
!
0.8mm)
2
Conditions
Ratings
--50
--50
--6
--2
--4
--400
1.3
3.5
150
--55 to +150
Unit
V
V
V
A
A
mA
W
W
°C
°C
Tc=25°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
VCB=-
-40V, IE=0
VEB=--4V, IC=0
VCE=-
-2V, IC=-
-100mA
VCE=-
-2V, IC=-
-1.5A
VCE=-
-10V, IC=-
-300mA
VCB=-
-10V, f=1MHz
IC=-
-1A, IB=--50mA
IC=-
-1A, IB=--50mA
200
40
420
16
--0.2
--0.9
--0.4
--1.2
MHz
pF
V
V
Conditions
Ratings
min
typ
max
--1
--1
560
Unit
µA
µA
Marking : AZ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21805EA TS IM TB-00000664 No.8123-1/4
2SA2153
Continued from preceding page.
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
IC=-
-10µA, IE=0
IC=-
-1mA, RBE=∞
IE=--10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min
--50
--50
--6
35
200
24
typ
max
Unit
V
V
V
ns
ns
ns
Package Dimensions
unit : mm
2038B
4.5
1.6
1.5
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
VR
IB1
IB2
IC
OUTPUT
RB
+
100µF
+
470µF
2.5
RL
4.0
1
0.4
0.5
1.5
2
3
0.4
VBE=5V
VCC= --25V
10IB1= --10IB2= IC= --700mA
3.0
0.75
1.0
50Ω
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
--2.0
--1.8
IC -- VCE
0m
--5
A
--60m
--2.0
IC -- VBE
VCE= --2V
A
Collector Current, IC -- A
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
Collector Current, IC -- A
--1.6
mA
--40
mA
--30
mA
--20
--10mA
--5mA
--4mA
--3mA
--2mA
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.4
--1mA
--0.2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--0.2
IB=0
--1.8
--2.0
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1
Collector-to-Emitter Voltage, VCE -- V
IT08346
Base-to-Emitter Voltage, VBE -- V
Ta=
75
°
C
25
°
C
--25
°
C
--0.6
IT08347
No.8123-2/4
2SA2153
7
5
hFE -- IC
VCE= --2V
Gain-Bandwidth Product, fT -- MHz
1000
7
5
fT -- IC
VCE= --10V
Ta=75
°C
3
25
°
C
--25
°
C
DC Current Gain, hFE
2
3
2
100
7
5
100
7
5
--0.01
3
2
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
Collector Current, IC -- A
7
5
IT08348
--1.0
Cob -- VCB
f=1MHz
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector Current, IC -- A
IT08349
VCE(sat) -- IC
7
5
3
2
IC / IB=20
Output Capacitance, Cob -- pF
3
2
--0.1
7
5
3
2
=
Ta
10
7
5
--0.1
°
C
75
5
°
C
--2
°
C
25
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
2
3
5 7 --1.0
2
3
5 7 --10
2
3
5 7 --100
IT08350
--0.01
--0.01
Collector-to-Base Voltage, VCB -- V
3
VBE(sat) -- IC
Collector Current, IC -- A
7
5
3
2
IT08351
ASO
IC / IB=20
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2
ICP= --4A
IC= --2A
50
0
µ
<10µs
10
0
µ
s
Collector Current, IC -- A
--1.0
--1.0
7
5
3
2
--0.1
7
5
3
2
10
0m
s
DC
1m
10
s
m
s
op
er
ati
on
s
Ta= --25°C
7
5
25
°
C
75
°
C
3
Tc=25°C
Single pulse
2
3
5
7 --1.0
2
3
5
7 --10
2
3
5 7
IT08353
2
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
--0.01
--0.1
Collector Current, IC -- A
1.4
1.3
1.2
IT08352
4.0
3.5
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
PC -- Tc
M
Collector Dissipation, PC -- W
1.0
nt
ed
Collector Dissipation, PC -- W
160
ou
on
3.0
2.5
2.0
1.5
1.0
0.5
0
0.8
ac
er
am
ic
bo
0.6
ar
d
(4
50
m
0.4
m
2
!
0.
8m
m
0.2
0
0
20
40
60
80
100
120
)
140
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT08354
Case Temperature, Tc --
°C
IT08355
No.8123-3/4
2SA2153
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2005. Specifications and information herein are subject
to change without notice.
PS No.8123-4/4
嵌入式系统
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