Agilent IAM-93516 High Linearity
Integrated GaAs Mixer
Data Sheet
Description
Agilent Technologies’s IAM-
93516 is a high linearity GaAs
FET Mixer using 0.5um
enhancement mode pHEMT
technology. This device houses
in a 3x3 LPCC package. The
IAM-93516 has a built-in LO
buffer amplifier and an IF
amplification stage that serve
as an ideal solution for
reducing board space and
delivering excellent high IIP3,
gain and isolation with a low
LO drive power. The device is
designed with a differential
configuration to provide good
noise immunity. The LO port
is 50 ohm matched and can be
driven differential or single
ended. An interstage match is
introduced between the mixer
and amplifier stage to allow
device tuning at the desired
RF and LO frequency. The
interstage match can be a
simple low pass, high pass or
intermediate frequency trap.
The amplifier output port is
200 ohm matched and fully
differential. The simple
matching at the RF port
provides for optimum input
return loss, noise figure and
IIP3 performance.
The IAM-93516 is ideally
suited for frequency down
conversion for base station
radio card receiver, microwave
link receiver, MMDS,
modulation and demodulation
for receiver and general
purpose resistive FET mixer,
which require high linearity.
All devices are 100% RF and
DC tested.
Applications
•
Frequency down converter for
base station radio card,
microwave link transceiver, and
MMDS
•
Modulation and demodulation for
receiver
•
General purpose resistive FET
mixer for other high linearity
applications
Features
•
DC =5V @ 111mA (Typ.)
•
RF =1.91 GHz, Pin
RF
= -10 dBm;
•
LO =1.7 GHz, Pin
LO
= 0 dBm;
•
IF = 210 MHz unless otherwise
specified
•
High Linearity: 23.1 dBm IIP3(typ)
•
Conversion Gain: 9.4 dB typical
•
Low Noise Figure: 11.6 dB
•
Wide band operation:
•
400-3000 MHz RF & LO input
•
70 – 300 MHz IF output
•
Fully differential or single ended
operation
•
High P1dB: 19.3 dB typical
•
Consistent RF performance over
LO Power
•
Low current consumption: 5V@
111mA typical
•
Excellent uniformity in product
specifications
•
3mm x 3mm x 0.9mm LPCC
package
•
MTTF > 300 years
[1]
•
MSL-1 and Lead-free.
Pin Connections and Package Marking
Interstage Match
+VDD
5
MIX_OUT+ 3
2 RF+
1 IFA_IN+
+VDD
14
6
LO+
LO Buffer
2
-
LO -
7
Mixer
3pF
MIX_OUT -
11 RF - 12 IFA_IN -
280 ohm
3pF
Amplifier
IF+
16
13
IF -
10
Top View
Note:
Package marking provides orientation and identification
“M2” = Device Code
“X” = Month code indicates the month of manufacture
Interstage Match
1.0 Absolute Maximum Ratings
[1]
Symbol
V
D
Pin
RF
Pin
LO
T
CH
T
STG
θ
ch_b
Parameter
Supply Voltage
[2]
CW RF Input Power
CW LO Input Power
Storage Temperature
Thermal Resistance
[4]
[2]
[2]
Units
V
dBm
dBm
°C
°C
°C/W
Absolute maximum
7
30
18
150
-65 to 150
39
Channel Temperature
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Determined at DC quiescent conditions and T
A
= 25°C.
3. Board (package belly) temperature T
B
is 25°C. Derate 25 mW/°C for T
B
> 130 °C.
4. Channel-to-board thermal resistance measured using Infra Red Imaging Method and 150
o
C Liquid Crystal Measurement method.
2.0 Product Consistency Distribution Charts
[5,6]
400
Stdev=0.74
180
150 Stdev = 0.14
frequency
180
150 Stdev = 0.5
120
-3 Std
+ 3 Std
frequency
300
frequency
120
90
60
30
200
-3 Std
+3 Std
90
60
30
0
-3 Std
+3 Std
100
0
107
108
109
110
Id
111
112
113
114
0
8.8
9.0
9.2
9.4
9.6
9.8
21
22
23
24
25
Figure 1. ID (mA)
[7]
Nominal = 111.2mA
Figure 2. GAIN (dB)
[8]
Nominal = 9.4dB
Figure 3. IIP3 (dBm)
[8]
Nominal = 23.1dBm
2
3.0 IAM-93516 Electrical Specifications
[6,8]
T
A
= 25
o
C, DC = 5V, RF Freq = 1.91GHz, Pin
RF
= -10dBm, LO Freq = 1.7GHz, Pin
LO
= 0dBm (unless otherwise specified)
Symbol
Id
[7]
G
C
IIP3
[8]
NF
P1dB
RL
RF
RL
LO
RL
IF
ISOL
L-R
ISOL
L-I
ISOL
R-L
Parameter and Test Condition
Device Current
Conversion Gain
Output Third Order Intercept Point
SSB Noise Figure
Output Power at 1dB Gain Compression
RF Port Return Loss
LO Port Return Loss
IF Port Return Loss
LO-RF Isolation
LO-IF Isolation
RF-IF Isolation
Units
mA
dB
dBm
dB
dBm
dB
dB
dB
dB
dB
dB
Min.
95.0
7.9
20.5
-
-
-
-
-
-
-
-
Typ.
111.2
9.4
23.1
11.6
19.3
12.0
20.0
11.0
26.0
20.0
32.0
Max.
125.0
10.9
-
-
-
-
-
-
-
-
-
Notes:
5. Distribution data sample size is 510 samples taken from 3 different wafers lots. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
6. Measurements were made on a production test board, which represents a trade-off between optimal Gain, IIP3, NF, P1dB and isolation. Board losses
of 0.1dB at the RF input and IF amplifier output have been compensated. Balun loss of 0.57dB which was obtained from the Toko’s supplied s-
parameter file is also compensated. The total IF amplifier output loss is 0.67dB.
7. The device current is measured without LO signal. At LO=0dBm, the current reduces by around 6 to 7mA.
8. Gain, P1dB, isolation and return loss test conditions: F
RF
=1.91GHz, F
LO
= 1.7GHz, F
IF
= 210MHz, Pin
RF
= -10dBm, Pin
LO
= 0dBm.
IIP3 test condition: F
RF1
= 1.91GHz, F
RF2
= 1.89GHz, F
LO
= 1.7GHz, Pin
RF
= -10dBm, Pin
LO
= 0dBm.
4.0 IAM-93516 Typical Performance
[9,10]
T
A
= 25
o
C, DC = 5V, RF Freq = 1.91GHz, Pin
RF
= -10dBm, LO Freq = 1.7GHz (unless otherwise specified)
1nH
39nH
22 Ohm
18pF
0.4pF
LO +
1.5pF
Interstage Match
40nH
Balun Transformer
Toko B4F
617DB-1018
IF
3.3nH
1.5nH
RF
1.5pF
LO -
Interstage Match
1nH
39nH
22 Ohm
18pF
1000pF
3.3nH
1000pF
0.4pF
1.5pF
40nH
Figure 4. IAM-93516 demoboard schematic optimally tuned at F
RF
= 1.91GHz and F
LO
= 1.7GHz
3
130
125
120
115
110
Id (mA)
10
9.8
105
100
95
90
85
80
-14
-12
-10
-8
-6
-4
-2
0
2
25 C
85 C
-40 C
4
6
Conversion Gain (dB)
9.6
9.4
9.2
9.0
8.8
-14
-12
-10
-8
-6
-4
-2
LO Power (dBm)
0
2
4
6
25 C
-40 C
85 C
LO Power(dBm)
Figure 5. Current vs. LO Power and Temperature
Figure 6. Conversion Gain vs. LO Power and Temperature
31
29
27
20.5
20
19.5
P1dB (dBm)
19
18.5
18
17.5
17
16.5
6
25
IIP3 (dBm)
23
21
19
17
15
-14
25 C
-40 C
85 C
-12
-10
-8
-6
-4
-2
0
2
4
25 C
-40 C
85 C
-14
-12
-10
-8
-6
-4
-2
0
2
4
6
LO Power (dBm)
LO Power (dBm)
Figure 7. IIP3 vs. LO Power and Temperature
Figure 8. P1dB vs. LO Power and Temperature
25
23
21
19
17
25 C
-40 C
85 C
30
25
Isolation_LO_IF (dB)
20
NF (dB)
15
13
11
9
7
5
-14
-12
-10
-8
-6
-4
-2
0
2
4
6
15
25 C
10
-40 C
85 C
5
-14
-12
-10
-8
-6
-4
-2
0
2
4
6
LO Power (dBm)
LO Power (dBm)
Figure 9. Noise Figure vs. LO Power and Temperature
Figure 10. LO-IF Isolation vs. LO Power and Temperature
4
40
35
30
25
20
15
-14
25 C
-40 C
85 C
35
30
Isolation_LO_RF (dB)
Isolation_RF_IF (dB)
25
20
25 C
15
-40 C
85 C
-12
-10
-8
-6
-4
-2
0
2
4
6
10
-14
-12
-10
-8
LO Power (dBm)
-6
-4
-2
LO Power(dBm)
0
2
4
6
Figure 11. RF-IF Isolation vs. LO Power and Temperature
Figure 12. LO-RF Isolation vs. LO Power and Temperature
12
10
28
27
26
25
IIP3 (dBm)
Conversion Gain (dB)
8
6
4
2
0
1.6
24
23
22
21
20
19
LO= -3dBm
LO=0dBm
LO=3dBm
1.7
1.8
1.9
2
RF Frequency (GHz)
2.1
2.2
LO= -3dBm
LO=0dBm
LO=3dBm
1.7
1.8
1.9
RF Frequency (GHz)
2.0
2.1
2.2
18
1.6
Figure 13. Conversion Gain vs. RF Frequency and LO Power at fixed IF
frequency
[11]
Figure 14. IIP3 vs. RF Frequency and LO Power at fixed IF frequency
[11]
45
40
Isolation_LO_IF (dB)
26
24
22
Isolation_RF_IF (dB)
35
30
25
20
15
1.6
1.7
1.8
1.9
2
2.1
2.2
RF Frequency (GHz)
LO=-3dBm
LO=0dBm
LO=3dBm
20
18
16
14
12
10
1.4
1.5
1.6
1.7
1.8
1.9
2
LO Frequency (GHz)
LO= -3dBm
LO=0dBm
LO=3dBm
Figure 15. RF-IF Isolation vs. RF Frequency and LO Power at fixed IF
frequency
Figure 16. LO-IF Isolation vs. LO Frequency and LO Power at fixed IF
frequency
5
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